Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU4507DX

GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack
envelope with an integrated damper diode intended for use in horizontal deflection circuits of colour television
receivers and computer monitors. Features exceptional tolerance to base drive and collector current load variations
resulting in a very low worst case dissipation.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VCESM Collector-emitter voltage peak value VBE = 0 V - 1500 V
VCEO Collector-emitter voltage (open base) - 800 V
IC Collector current (DC) - 8 A
ICM Collector current peak value - 15 A
Ptot Total power dissipation Ths 25 C - 45 W
VCEsat Collector-emitter saturation voltage IC = 4 A; IB = 1.0 A - 3.0 V
ICsat Collector saturation current f = 16kHz 4 - A
VF Diode forward voltage IF = 4 A 1.7 2.1 V
tf Fall time ICsat = 4 A; f = 16kHz 300 400 ns

PINNING - SOT399 PIN CONFIGURATION SYMBOL

PIN DESCRIPTION case c
1 base
2 collector
b
3 emitter Rbe

case isolated
1 2 3 e

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCESM Collector-emitter voltage peak value VBE = 0 V - 1500 V
VCEO Collector-emitter voltage (open base) - 800 V
IC Collector current (DC) - 8 A
ICM Collector current peak value - 15 A
IB Base current (DC) - 4 A
IBM Base current peak value - 6 A
-IBM Reverse base current peak value 1 - 5 A
Ptot Total power dissipation Ths 25 C - 45 W
Tstg Storage temperature -65 150 C
Tj Junction temperature - 150 C

THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Rth j-hs Junction to heatsink with heatsink compound - 2.8 K/W
Rth j-a Junction to ambient in free air 35 - K/W

1 Turn-off current.

January 1999 1 Rev 1.000

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU4507DX

ISOLATION LIMITING VALUE & CHARACTERISTIC

Ths = 25 C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Visol Repetitive peak voltage from all R.H. 65 % ; clean and dustfree - - 2500 V
three terminals to external
heatsink
Cisol Capacitance from T2 to external f = 1 MHz - 22 - pF
heatsink

STATIC CHARACTERISTICS
Ths = 25 C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
2
ICES Collector cut-off current VBE = 0 V; VCE = VCESMmax - - 1.0 mA
ICES VBE = 0 V; VCE = VCESMmax - - 2.0 mA
Tj = 125 C
VCEOsust Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 800 - - V
L = 25 mH
BVEBO Emitter-base breakdown voltage IB = 600 mA 7.5 13.5 - V
Rbe Base-emitter resistance VEB = 6 V - 30 -
VCEsat Collector-emitter saturation voltages IC = 4 A; IB = 1.0 A - - 3.0 V
VBEsat Base-emitter saturation voltage IC = 4 A; IB = 1.0 A 0.83 0.92 1.01 V
hFE DC current gain IC = 500 mA; VCE = 5 V - 7 -
hFE IC = 4 A; VCE = 5 V 4.2 5.7 7.3
VF Diode forward voltage IF = 4 A - 1.7 2.1 V

DYNAMIC CHARACTERISTICS
Ths = 25 C unless otherwise specified
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Switching times (16 kHz line ICsat = 4 A; IB1 = 0.8 A;(IB2 = -2 A)
deflection circuit)
ts Turn-off storage time 3.7 4.6 s
tf Turn-off fall time 300 400 ns
Vfr Anti-parallel diode forward recovery IF = 4 A; dIF/dt = 50 A/s 18.5 - V
voltage
tfr Anti-parallel diode forward recovery VF = 5 V 500 - ns
time

2 Measured with half sine-wave voltage (curve tracer).

January 1999 2 Rev 1.000

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU4507DX

ICsat + 150 v nominal

TRANSISTOR
adjust for ICsat
IC DIODE

Lc
IB IB1

20us 26us IB2 D.U.T.

IBend LB
Cfb
64us

VCE -VBB Rbe

Fig.1. Switching times waveforms (16 kHz). Fig.4. Switching times test circuit.

ICsat hFE
100
90 %
VCE = 1V Ths = 25 C
Ths = 85 C
IC

10 %
tf 10
t
ts
IB
IB1

1
- IB2 0.01 0.1 1 IC / A 10

Fig.2. Switching times definitions. Fig.5. High and low DC current gain.

I I
hFE BU4507DF/X/Z
F F
100

VCE = 5V Ths = 25 C
Ths = 85 C

10%
time
t fr
10
V
F

5V V
fr
V
F
1
time 0.01 0.1 1 IC / A 10

Fig.3. Definition of anti-parallel diode Vfr and tfr. Fig.6. High and low DC current gain.

January 1999 3 Rev 1.000

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU4507DX

BU4507DF/X/Z PD% Normalised Power Derating

10 120
with heatsink compound
110
Ths = 25 C
100
Ths = 85 C
90
80
1
70
60
50
40
0.1 IC/IB = 5
30
20
10
0
0 20 40 60 80 100 120 140
0.01
0.1 1 10 100 Ths / C
Fig.7. Typical collector-emitter saturation voltage. Fig.10. Normalised power dissipation.
PD% = 100PD/PD 25C

VBESAT \ V BU4507DF/X/Z Zth K/W BU4507AF

1.2 10
Ths = 25 C
Ths = 85 C
1.1
0.5
1
0.2
1
0.1

0.05
0.9 0.1
0.02
IC = 4 A

0.8
PD tp tp
0.01 D=
T
0.7 0
t
T
0.001
0.6 1.0E-07 1.0E-05 1.0E-03 1.0E-01 1.0E+01
0 1 2 3 4
IB / A t/s

Fig.8. Typical base-emitter saturation voltage. Fig.11. Transient thermal impedance.

BU4507D ts/tf
ts/tf/ us
10
ICsat = 4 A
Ths = 85 C
Freq = 16 kHz
8

0
0 0.5 1 1.5 2 2.5 3
IB / A

Fig.9. Typical collector storage and fall time.

IC =4 A; Tj = 85C; f = 16kHz

January 1999 4 Rev 1.000

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU4507DX

MECHANICAL DATA

Dimensions in mm
16.0 max 5.8 max
Net Mass: 5.88 g
3.0
0.7

4.5
3.3
10.0

27 25
max
25.1
25.7
22.5
max

5.1

2.2 max
18.1
4.5
min
1.1
0.4 M
2
0.9 max
5.45 5.45
3.3

Fig.12. SOT399; The seating plane is electrically isolated from all terminals.

Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".

January 1999 5 Rev 1.000

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU4507DX

DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1999
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

January 1999 6 Rev 1.000

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