Philips Semiconductors Product specification

Silicon Diffused Power Transistor BUT11AX

GENERAL DESCRIPTION
High-voltage, high-speed glass-passivated npn power transistor in a plastic full-pack envelope intended for use in
converters, inverters, switching regulators, motor control systems, etc.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VCESM Collector-emitter voltage peak value VBE = 0 V - 1000 V
VCEO Collector-emitter voltage (open base) - 450 V
IC Collector current (DC) - 5 A
ICM Collector current peak value - 10 A
Ptot Total power dissipation Ths ≤ 25 ˚C - 32 W
VCEsat Collector-emitter saturation voltage - 1.5 V
ICsat Collector saturation current 2.5 - A
tf Fall time 150 - ns

PINNING - SOT186A PIN CONFIGURATION SYMBOL

PIN DESCRIPTION c
case

1 base
2 collector
b
3 emitter

case isolated
1 2 3 e

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCESM Collector-emitter voltage peak value VBE = 0 V - 1000 V
VCEO Collector-emitter voltage (open base) - 450 V
IC Collector current (DC) - 5 A
ICM Collector current peak value - 10 A
IB Base current (DC) - 2 A
IBM Base current peak value - 4 A
Ptot Total power dissipation Ths ≤ 25 ˚C - 32 W
Tstg Storage temperature -65 150 ˚C
Tj Junction temperature - 150 ˚C

THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Rth j-hs Junction to heatsink with heatsink compound - 3.95 K/W
Rth j-a Junction to ambient in free air 55 - K/W

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Philips Semiconductors Product specification

Silicon Diffused Power Transistor BUT11AX

ISOLATION LIMITING VALUE & CHARACTERISTIC

Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Visol R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal - 2500 V
three terminals to external waveform;
heatsink R.H. ≤ 65% ; clean and dustfree
Cisol Capacitance from T2 to external f = 1 MHz - 10 - pF
heatsink

STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
1
ICES Collector cut-off current VBE = 0 V; VCE = VCESMmax - - 1.0 mA
ICES VBE = 0 V; VCE = VCESMmax; - - 2.0 mA
Tj = 125 ˚C
IEBO Emitter cut-off current VEB = 9 V; IC = 0 A - - 10 mA
VCEOsust Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 450 - - V
L = 25 mH
VCEsat Collector-emitter saturation voltages IC = 2.5 A; IB = 0.5 A - - 1.5 V
VBEsat Base-emitter saturation voltage IC = 2.5 A; IB = 0.5 A - - 1.3 V
hFE DC current gain IC = 5 mA; VCE = 5 V 10 18 35
hFE IC = 500 mA; VCE = 5 V 10 20 35

DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Switching times (resistive load) ICon = 2.5 A; IBon = -IBoff = 0.5 A
ton Turn-on time 0.6 - µs
ts Turn-off storage time 3.5 - µs
tf Turn-off fall time 0.6 - µs
Switching times (inductive load) ICon = 2.5 A; IBon = 0.5 A; LB = 1 µH;
-VBB = 5 V
ts Turn-off storage time 1.5 - µs
tf Turn-off fall time 150 - ns
Switching times (inductive load) ICon = 2.5 A; IBon = 0.5 A; LB = 1 µH;
-VBB = 5 V; Tj = 100 ˚C
ts Turn-off storage time 1.8 - µs
tf Turn-off fall time 170 - ns

1 Measured with half sine-wave voltage (curve tracer).

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Philips Semiconductors Product specification

Silicon Diffused Power Transistor BUT11AX

ICon
90 % 90 %
+ 50v
100-200R
IC

10 %
ts
Horizontal ton tf
toff
Oscilloscope
IBon
IB
Vertical
10 %
300R 1R tr 30ns
6V
30-60 Hz
-IBoff

Fig.1. Test circuit for VCEOsust. Fig.4. Switching times waveforms with resistive load.

IC / mA VCC

250
LC

200

IBon LB
100
T.U.T.
-VBB
0
VCE / V min
VCEOsust
Fig.2. Oscilloscope display for VCEOsust. Fig.5. Test circuit inductive load.
VCC = 300 V; -VBE = 5 V; LC = 200 uH; LB = 1 uH

VCC ICon
90 %

IC

RL

VIM 10 %
RB
0 T.U.T. ts tf t
toff
tp
IB IBon

T t

-IBoff

Fig.3. Test circuit resistive load. VIM = -6 to +8 V Fig.6. Switching times waveforms with inductive load.
VCC = 250 V; tp = 20 µs; δ = tp / T = 0.01.
RB and RL calculated from ICon and IBon requirements.

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Philips Semiconductors Product specification

Silicon Diffused Power Transistor BUT11AX

% Normalised Derating IC / A
120
with heatsink compound 100
110
100
90
80
70 ICM max = 0.01
60 P tot
10
50 IC max tp =
40 10 us
30 II
20 100 us
(1)
10
1
0
0 20 40 60 80 100 120 140
Ths / C 1 ms
Fig.7. Normalised power derating and second
10 ms
breakdown curves. I (2)
0.1 500 ms

DC

IC / A BUT11AX
6 III

5 0.01
1 10 100 1000
4 VCE / V

Fig.10. Forward bias safe operating area. Ths ≤ 25 ˚C

3

(1) Ptot max and Ptot peak max lines.

2 (2) Second breakdown limits.
I Region of permissible DC operation.
1 II Extension for repetitive pulse operation.
III Extension during turn-on in single
0 transistor converters provided that
0 400
VCE / V
800 1200
RBE ≤ 100 Ω and tp ≤ 0.6 µs.
Fig.8. Reverse bias safe operating area. Tj ≤ Tj max NB: Mounted with heatsink compound and
30 ± 5 newton force on the centre of the
envelope.

h FE BUT11AX
100

5V

1V
10

1
0.01 0.1 1 10 100
IC / A
Fig.9. Typical DC current gain.
hFE = f(IC); parameter VCE

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Philips Semiconductors Product specification

Silicon Diffused Power Transistor BUT11AX

Fig.11. Typical base-emitter and collector-emitter saturation voltages.

VBEsat = f(IC); VCEsat = f(IC); IC/IB = 5

Fig.12. Collector-emitter saturation voltage. Solid lines = typ values,

dotted lines = max values. VCEsat = f(IB); parameter IC

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Philips Semiconductors Product specification

Silicon Diffused Power Transistor BUT11AX

Fig.13. Typical base-emitter saturation voltage.

VBEsat = f(IB); parameter IC

Fig.14. Transient thermal impedance.

Zth j-hs = f(t); parameter D = tp/T

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Philips Semiconductors Product specification

Silicon Diffused Power Transistor BUT11AX

MECHANICAL DATA

Dimensions in mm
Net Mass: 2 g 10.3
max
4.6
max
3.2
3.0 2.9 max

Recesses (2x) 2.8

2.5 6.4
0.8 max. depth
15.8
15.8 19 seating max
max. max. plane
3 max.
not tinned

3
2.5

13.5
min.

1 2 3

0.4 M 1.0 (2x)

0.6
2.54 0.9
0.5 0.7
5.08 2.5 1.3

Fig.15. SOT186A; The seating plane is electrically isolated from all terminals.

Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".

November 1995 7 Rev 1.100

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BUT11AX

DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

November 1995 8 Rev 1.100