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    SDT 2018

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    Aniruddh Ande
    This document contains the questions for the Sixth Semester B.Tech. (E & C) Degree End Semester Examination in the subject of Semiconductor Device Physics (ECE - 4015). The exam contains 10 questions across 5 sections testing knowledge of semiconductor physics concepts and device operation. Questions cover topics such as band structure, carrier transport, p-n junctions, contacts, and MOS capacitors. Students are instructed to answer all questions within the allotted time of 3 hours.

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    SDT 2018

    Uploaded by

    Aniruddh Ande
    10 views2 pages
    This document contains the questions for the Sixth Semester B.Tech. (E & C) Degree End Semester Examination in the subject of Semiconductor Device Physics (ECE - 4015). The exam contains 10 questions across 5 sections testing knowledge of semiconductor physics concepts and device operation. Questions cover topics such as band structure, carrier transport, p-n junctions, contacts, and MOS capacitors. Students are instructed to answer all questions within the allotted time of 3 hours.

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    This document contains the questions for the Sixth Semester B.Tech. (E & C) Degree End Semester Examination in the subject of Semiconductor Device Physics (ECE - 4015). The exam contains 10 questions across 5 sections testing knowledge of semiconductor physics concepts and device operation. Questions cover topics such as band structure, carrier transport, p-n junctions, contacts, and MOS capacitors. Students are instructed to answer all questions within the allotted time of 3 hours.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    10 views2 pages

    SDT 2018

    Uploaded by

    Aniruddh Ande
    This document contains the questions for the Sixth Semester B.Tech. (E & C) Degree End Semester Examination in the subject of Semiconductor Device Physics (ECE - 4015). The exam contains 10 questions across 5 sections testing knowledge of semiconductor physics concepts and device operation. Questions cover topics such as band structure, carrier transport, p-n junctions, contacts, and MOS capacitors. Students are instructed to answer all questions within the allotted time of 3 hours.

    Copyright:

    © All Rights Reserved
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    Download as pdf or txt
    of 2

    Reg. No.

    SIXTH SEMESTER B.Tech. (E & C) DEGREE END SEMESTER EXAMINATION


    APRIL 2018
    SUBJECT: SEMICONDUCTOR DEVICE PHYSICS (ECE - 4015)

    TIME: 3 HOURS MAX. MARKS: 50


    Instructions to candidates
     Answer ALL questions.
     Missing data may be suitably assumed.

    1A. Consider an n-type silicon sample with a doping concentration ND = 10 16 cm -3 If it is illuminated


    such that electron –holes pairs are generated of the order of 10 12 cm -3. Give pictorial representation
    of the Fermi level positions with respect to EI before and after light source is switched on at room
    temperature. Given that ni = 1.5 x 10 10 cm -3.
    1B. Explain physical significance of mass action law in semiconductors
    1C. Calculate mean free time of electron having mobility of 1000 cm 2/ V-S at 3000K. Also calculate the
    mean free path. Given that mn = 0.26 mo.
    1D Derive an expression for minimum conductivity in a semiconductor in terms of mobilities of charge
    carriers.
    (4+2+2+2)
    2A. Describe the direct and indirect band gap semiconductors with E-K diagrams. How can these
    diagrams be utilised to calculate effective mass of electron.
    2B. Hall measurements are made on an p-type semiconductor bar of 500 µm wide and 20 µm thick. The
    Hall contacts are displaced 3µm from each other in the direction of current flow of 3 mA. The
    voltage between the Hall contacts with a magnetic field of 10KG pointing out of the plane of the
    sample 4.2 mV and the magnetic field is reversed the voltage changes to -2.8 mV. What is hole
    concentration and mobility?
    2C. What are the relevant equations that must be solved in general for a semiconductor device problem
    (4+4+2)
    3A. In a very long p-type Si bar with cross-sectional area 0.5 cm 2 and NA to be 10 17 cm -3, holes are
    injected such that the steady state excess hole concentration is 5 x 10 16 cm -3, at x= 0. What is the
    steady state separation between Fp and Ec at x = 2000 Å? What is the hole current there? How much
    is the excess stored charge? Assume that µp = 500cm 2 /V-s and τp = 10 -10 s.
    3B. Describe the minority carrier charge profile on either side of the pn- junction when it is reverse
    biased. If it is switched forward biased what could be minority charge profile on both sides of the
    junction, at equilibrium.
    3C. Find an expression for electron current in the n-type material of a forward biased p-n junction
    (5+3+2)
    4A. What is difference between ohmic and rectifying contacts? Describe how metal – N-type

    ECE –4015 Page 1 of 2


    semiconductor contacts behave when metal work function is greater than that of semiconductor
    4B. The platinum work function is 5.0 eV and electron affinity for Si is 4.05 eV. Determine barrier
    heights and built in voltage for an MS contact of Pt with N-type Si having a doping concentration of
    ND = 2.8 x 10 14 cm -3. Given that Nc = 2.8 x 10 19 cm -3 .
    4C. What are the advantages of Schottky diodes over PN junction diodes?
    (5+3+2)
    5A. Describe different modes of operation of ideal MOS structure on p-type substrate
    5B. Describe the capacitance – voltage characteristics of MOS capacitor.
    (6+4)

    ECE –4015 Page 2 of 2

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