Question_Microwave_Assignment

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Department of Electronics and Communication Engineering

National Institute of Technology Srinagar, Hazratbal-190006


B.Tech (ECE)-VII Sem, Session: 2024-25
Assignment (Autumn 2024)

Subject: Microwave Engineering Subject Code: ECT–405


Date of Assignment: 14/11/2024 Max. Marks: 08
Subject Teacher: Dr. Amit Kumar Last Date of Submission: 27/11/2024

Q. Question
Cos
No
1. Elaborate on the advantages of microwave communication. CO1
2. In a rectangular waveguide for which a = 1.5 cm, b = 0.8 cm, σ = 0, µ = µ0 and ɛ
= 4ɛ0, Hx = 2 sin (πx/a) cos (3πy/b) sin (π× 1011t - βz) A/m
Determine for TE13 mode
(a) The mode of operation
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(b) The cutoff frequency
(c) The phase constant β
(d) The propagation constant γ
(e) The intrinsic wave impedance η.
3. Differentiate briefly between TE, TM, and TEM modes in terms of electric field,
magnetic field, and wave propagation directions. Justify the dominant mode in
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TE and TM modes. Write the necessary final relations of intrinsic impedance,
cut-off frequency, cut-off wavelength, and phase velocity in TE and TM modes.
4. A standard air-filled rectangular waveguide with dimensions a = 8.636 cm, b =
4.318 cm is fed by a 4-GHz carrier from a coaxial cable. Determine if a TM11
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mode will be propagated. If so, calculate the phase velocity and the group
velocity.
5. Determine the average power flowing through the rectangular waveguide and
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derive the dielectric losses that occurred in the waveguides.
6. Discuss the necessary conditions for a rectangular waveguide to behave as a
microwave cavity resonator. Write the necessary equations of H-field and E-field
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in the direction of propagation say z-axis for TEmnp and TMmnp modes
respectively along with wave number (k) and resonant frequency relations (fr).
7. In an H-plane T-junction, compute power is delivered to loads of 45 ohms and 55
ohms connected to arms 1 and 2 when a 10 mW power is delivered to the CO2
matched port 3.
8. A Magic-Tee is terminated at collinear arms/ports 1 and 2 and H-arm/port 4 by
impedances of reflection coefficient Γ1= 0.4, Γ2=0.5, and Γ4=0.6, respectively. If
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2W power is fed through the E-arm/port 3, calculate the power reflected at
arm/port 3 and power transmitted to the other three ports.
9. Derive the necessary S-Matrix of Magic-Tee with proper justification. CO2
10. Determine the S-matrix of a perfectly matched, lossless, non-reciprocal three-port
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circulator with proper justification.
11. Derive the scattering matrix of a four-port circulator designed using two Magic
Tees with proper justification. CO2

1
Department of Electronics and Communication Engineering
National Institute of Technology Srinagar, Hazratbal-190006
B.Tech (ECE)-VII Sem, Session: 2024-25
Assignment (Autumn 2024)

12. State the power relation for coupling (C), transmission loss (T), directivity (D),
and return loss (R) in dB for a forward directional coupler. Also, express the same CO2
(C, T, D, R) in terms of relevant S-parameters.
13. Describe the working of isolators. Derive their matched and lossless S-matrix. CO2
14. Explain the functional diagram of a reflex klystron and mechanism of
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oscillations, mode of osillations and velocity modulation.
15. A reflex klystron is to be operated at frequency of 10 GHz, with dc beam voltage
300 V, repeller space 0.1 cm for 134 mode. Calculate PRFmax and corresponding CO3
repeller voltage for a beam current of 10 mA.
16. A reflex klystron is operated at 9 GHz with a DC beam voltage of 600 V
for514 mode, repeller space length of 1 mm, and DC beam current of 20 mA. The
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beam-coupling coefficient is assumed to be 1. Calculate the repeller voltage,
electronic efficiency, and output power.
17. Discuss in detail the mechanism of operation of Two-Cavity Klystron with the
necessary functional and timing diagram. Derive the necessary relations to find
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average velocity, transit time, optimum drift space length, Power output,
efficiency, and Gain.
18. An identical two-cavity klystron amplifier operates at 4 GHz with V0 = 2 kV, I0
=25 mA, cavity gap = 1 mm, and drift space = 4 cm. If DC beam conductance
and catcher cavity total equivalent conductances are 0.25×10-4 mhos and 0.3 ×10-
4
mhos respectively, calculate, CO3
(a) the beam-coupling coefficient, the DC transit angle in the drift space, and the
input cavity voltage magnitude for maximum output voltage
(b) voltage gain and efficiency, neglecting the beam loading
19. A two-cavity klystron amplifier is tuned at 3 GHz. The drift space length is 2 cm
and the beam current is 25 mA. The catcher voltage is 0.3 times the beam
voltage. It is assumed that the gap length of the cavity << the drift space so that
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the input and output voltages are in phase (β= 1). Compute (a) power output and
efficiency for N = 314 (b) beam voltage, input voltage, and output voltage for
maximum power output of N = 314 .
20. Discuss the construction and operation of basic Magnetron, equations of electron
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trajectory, Cut-off Magnetic Field, and Voltage and resonant modes in magnetron
21. A pulsed cylindrical magnetron is operated with the following parameters
Anode voltage = 50 kV
Beam current = 25 A
Magnetic density = 0.5 Wb/m2
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The radius of the cathode cylinder = 5 cm
The radius of the anode cylinder = 10 cm
Calculate (a) the angular frequency, (b) the cut-off voltage, and (c) the cut-off
magnetic flux density.
22. A helix traveling-wave tube operates at 5 GHz under a beam voltage of 25 kV
and a beam current of 400 mA. If the helix impedance is 50 ohms and the CO3
interaction length is 15 cm, find the output power gain in dB.

2
Department of Electronics and Communication Engineering
National Institute of Technology Srinagar, Hazratbal-190006
B.Tech (ECE)-VII Sem, Session: 2024-25
Assignment (Autumn 2024)

23. Discuss in detail the working of the TWT amplifier tube and circuit & the wave
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propagation in Helix and bunch formation and its gain characteristics.
24. Explain in detail the working of the GUNN Diode and hence the GUNN
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oscillator.
25. Describe in brief the following Microwave Diodes
a. PIN Diode d. IMPATT Diode
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b. TRAPATT Diode e. Varactor Diode
c. Tunnel Diode f. BARITT Diodes
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26. The drift velocity of electrons is 4×10 cm/s through the active region of length
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10×10–6 cm. Calculate the natural frequency of the diode and the critical voltage.
27. Differentiate briefly between MESFET and HEMT. Discuss in detail the schema
diagram, biasing circuit, ID vs Vds characteristics, Small-signal equivalent circuit, CO4
and advantages & disadvantages of MESFET.
28. Explian the working of Microwave Bipolar Transistors with necessary cro-
section view and concentration profile. Also, draw the Microwave equivalent CO4
circuits of a bipolar transistor for CE and CB modes.
29. A Si microwave transistor has a reactance of 2 ohms, transit time cut-off
frequency of 2 GHz, maximum E-field 3.2×105 V/m, and saturation drift velocity CO4
of 8×105 m/s. Determine the maximum allowable power.
30. Design a matching network for the Microwave Transistor Amplifier and derive
Power gain, GP, and available power gain, GA in terms of S-parameters and CO4
reflection coefficient.
31 Derive the necessary relation between the Noise figure and the equivalent
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temperature of a noisy resistor.
32. Two microwave amplifiers are cascaded. If the gain and noise figures of the first
and second amplifiers are G1 = 20 dB, F1 = 3 dB, and G2 = 10 dB, F2 = 2 dB,
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respectively, determine the total noise figure of the system. Explain importance
of gain of two amplifiers.

Course Outcomes
CO1: To have good idea about microwaves, microwave communication and wave propagation
through waveguides.
CO2: To understand microwave cavities, scattering parameters and passive devices
CO3: To be able to understand the working and construction of various Active microwave
devices.
CO4: To have in-depth understanding about high-frequency semiconductor active devices and
to be able to design microwave amplifiers and oscillator circuits.

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