S9015

PNP Silicon
Elektronische Bauelemente Low Frequency, Low Noise Amplifier

RoHS Compliant Product

A suffix of "-C" specifies halogen & lead-free
SOT-23
FEATURES Collector Dim Min Max
3 3
A 2.800 3.040
Power dissipation 1 1
B 1.200 1.400

PCM : 0.2 W 2 Base C 0.890 1.110

Collector Current D 0.370 0.500

2 G 1.780 2.040
ICM : -0.1 A A
Emitter H 0.013 0.100
L
Collector-base voltage
J 0.085 0.177
V(BR)CBO : -50 V 3
K 0.450 0.600
Top View B S
Operating & storage junction temperature 1 2 L 0.890 1.020
Tj, Tstg : - 55 C ~ + 150 C
O O
S 2.100 2.500
V G
V 0.450 0.600
All Dimension in mm
C

D H J
K

ELECTRICAL CHARACTERISTICS ( Tamp.=25 C unless otherwise specified) O

Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO Ic= -100µA, IE=0 -50 V

Collector-emitter breakdown voltage V(BR)CEO Ic= -0.1mA, IB=0 -45 V

Emitter-base breakdown voltage V(BR)EBO IE=-100µA, IC=0 -5 V

Collector cut-off current ICBO VCB=-50V, IE=0 -0.1 µA

Emitter cut-off current IEBO VEB= -5V, IC=0 -0.1 µA

DC current gain hFE(1) VCE=-5V, IC= -1mA 200 1000

Collector-emitter saturation voltage VCE(sat) IC=-100mA, IB= -10mA -0.3 V

Base-emitter saturation voltage VBE(sat) IC=-100mA, IB=-10mA -1 V

VCE=-5V, IC= -10mA

Transition frequency fT 150 MHz
f=30MHz

CLASSIFICATION OF hFE(1)
Rank L H
Range 200-450 450-1000

DEVICE MARKING S9015 = M6

http://www.SeCoSGmbH.com Any changing of specification will not be informed individual

01-Jun-2004 Rev. B Page 1 of 2

 S9015
PNP Silicon
Elektronische Bauelemente Low Frequency, Low Noise Amplifier

Typical Characteristics

-50
-1000
VCE = -5V
IB = -400µA
IB = -350µA
IC [mA], COLLECTOR CURRENT

-40

IB = -300µA

hFE, DC CURRENT GAIN

IB = -250µA
-30

IB = -200µA
-100

-20 IB = -150µA

IB = -100µA
-10
IB = -50µA

-0 -10
-0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 -0.1 -1 -10 -100 -1000

VCE [V], COLLECTOR-EMITTER VOLTAGE IC [mA], COLLECTOR CURRENT

Figure 1. Static Characteristic Figure 2. DC current Gain

-1000
VBE(sat), V CE(sat)[mV], SATURATION VOLTAGE

-100
VCE = -5V

VBE (sat)
IC [mA], COLLECTOR CURRENT

-10

-100

-1

VCE (sat)

IC = 20 IB -0.1
-10 -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2
-0.1 -1 -10 -100

VBE [V], BASE-EMITTER VOLTAGE

IC [mA], COLLECTOR CURRENT

Figure 3. Base-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage

Collector-Emitter Saturation Voltage
fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT

1000
f = 1 MHz VCE = -6V
IE = 0
Cob [pF], OUTPUT CAPACITANCE

10

100

1 10
-1 -10 -100 -1 -10

VCB [V], COLLECTOR-BASE VOLTAGE IC [mA], COLLECTOR CURRENT

Figure 5. Collector Output Capacitance Figure 6. Current Gian Bandwidth Product

http://www.SeCoSGmbH.com Any changing of specification will not be informed individual

01-Jun-2004 Rev. B Page 2 of 2