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    Semiconductor 2N5551: Technical Data

    Uploaded by

    Diego Oliveira
    This document provides technical specifications for the 2N5551 epitaxial planar NPN transistor. It is suitable for general and high voltage applications with a collector-base breakdown voltage of 180V and collector-emitter breakdown voltage of 160V. The transistor has low leakage current, low saturation voltage, and low noise figure of 8dB maximum. Electrical characteristics including current gain, saturation voltage, breakdown voltages, transition frequency, and capacitances are provided.

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    Semiconductor 2N5551: Technical Data

    Uploaded by

    Diego Oliveira
    31 views2 pages
    This document provides technical specifications for the 2N5551 epitaxial planar NPN transistor. It is suitable for general and high voltage applications with a collector-base breakdown voltage of 180V and collector-emitter breakdown voltage of 160V. The transistor has low leakage current, low saturation voltage, and low noise figure of 8dB maximum. Electrical characteristics including current gain, saturation voltage, breakdown voltages, transition frequency, and capacitances are provided.

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    2N5551-KEC

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    This document provides technical specifications for the 2N5551 epitaxial planar NPN transistor. It is suitable for general and high voltage applications with a collector-base breakdown voltage of 180V and collector-emitter breakdown voltage of 160V. The transistor has low leakage current, low saturation voltage, and low noise figure of 8dB maximum. Electrical characteristics including current gain, saturation voltage, breakdown voltages, transition frequency, and capacitances are provided.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    31 views2 pages

    Semiconductor 2N5551: Technical Data

    Uploaded by

    Diego Oliveira
    This document provides technical specifications for the 2N5551 epitaxial planar NPN transistor. It is suitable for general and high voltage applications with a collector-base breakdown voltage of 180V and collector-emitter breakdown voltage of 160V. The transistor has low leakage current, low saturation voltage, and low noise figure of 8dB maximum. Electrical characteristics including current gain, saturation voltage, breakdown voltages, transition frequency, and capacitances are provided.

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    © All Rights Reserved
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    of 2

    SEMICONDUCTOR 2N5551

    TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR

    GENERAL PURPOSE APPLICATION.


    HIGH VOLTAGE APPLICATION.
    B C

    FEATURES

    A
    High Collector Breakdwon Voltage
    : VCBO=180V, VCEO=160V N DIM MILLIMETERS
    E A 4.70 MAX
    K
    Low Leakage Current. G B 4.80 MAX
    D C 3.70 MAX
    : ICBO=50nA(Max.), VCB=120V

    J
    D 0.45
    E 1.00
    Low Saturation Voltage
    F 1.27
    : VCE(sat)=0.2V(Max.), IC=50mA, IB=5mA G 0.85
    H 0.45
    Low Noise : NF=8dB (Max.) H J _ 0.50
    14.00 +
    F F K 0.55 MAX
    L 2.30
    M 0.45 MAX
    N 1.00

    C
    1 2 3

    M
    MAXIMUM RATING (Ta=25 ) 1. EMITTER
    2. BASE
    CHARACTERISTIC SYMBOL RATING UNIT 3. COLLECTOR

    Collector-Base Voltage VCBO 180 V


    Collector-Emitter Voltage VCEO 160 V TO-92
    Emitter-Base Voltage VEBO 6 V
    Collector Current IC 600 mA
    Base Current IB 100 mA
    Collector Power Dissipation PC 625 mW
    Junction Temperature Tj 150
    Storage Temperature Range Tstg -55 150

    1997. 5. 2 Revision No : 0 1/2


    2N5551

    ELECTRICAL CHARACTERISTICS (Ta=25 )


    CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
    VCB=120V, IE=0 - - 50 nA
    Collector Cut-off Current ICBO
    VCB=120V, IE=0, Ta=100 - - 50 A
    Emitter Cut-off Current IEBO VEB=4V, IC=0 - - 50 nA
    Collector-Base Breakdown Voltage V(BR)CBO IC=0.1mA, IE=0 180 - - V
    Collector-Emitter Breakdown Voltage * V(BR)CEO IC=1mA, IB=0 160 - - V
    Emitter-Base Breakdown Voltage V(BR)EBO IE=10 A, IC=0 6 - - V
    hFE(1) VCE=5V, IC=1mA 80 - -
    DC Current Gain * hFE(2) VCE=5V, IC=10mA 80 - 250
    hFE(3) VCE=5V, IC=50mA 30 - -

    Collector-Emitter * VCE(sat)1 IC=10mA, IB=1mA - - 0.15


    V
    Saturation Voltage VCE(sat)2 IC=50mA, IB=5mA - - 0.2

    Base-Emitter * VBE(sat)1 IC=10mA, IB=1mA - - 1.0


    V
    Saturation Voltage VBE(sat)2 IC=50mA, IB=5mA - - 1.0
    Transition Frequency fT VCE=10V, IC=10mA, f=100MHz 100 - 300 MHz
    Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - - 6 pF
    Input Capacitance Cib VBE=0.5V, IC=0, f=1MHz - - 20 pF
    Small-Signal Current Gain hfe VCE=10V, IC=1mA, f=1kHz 50 - 200
    VCE=5V, IC=250 A
    Noise Figure NF - - 8 dB
    Rg=1k , f=10Hz 15.7kHz
    * Pulse Test : Pulse Width 300 S, Duty Cycle 2%.

    1997. 5. 2 Revision No : 0 2/2

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