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    TPT 5609

    Uploaded by

    Aram Castellanos
    This document provides specifications for an NPN epitaxial silicon transistor. It lists maximum ratings, electrical characteristics at 25°C, and dimensions. Key features include excellent current gain linearity and low saturation voltage. Maximum ratings include collector-emitter voltage of 20V and collector current of 1A. Typical current gain is 60-240. Saturation voltage is typically below 0.5V.

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    © All Rights Reserved
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    TPT 5609

    Uploaded by

    Aram Castellanos
    47 views3 pages
    This document provides specifications for an NPN epitaxial silicon transistor. It lists maximum ratings, electrical characteristics at 25°C, and dimensions. Key features include excellent current gain linearity and low saturation voltage. Maximum ratings include collector-emitter voltage of 20V and collector current of 1A. Typical current gain is 60-240. Saturation voltage is typically below 0.5V.

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    tpt5609

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    This document provides specifications for an NPN epitaxial silicon transistor. It lists maximum ratings, electrical characteristics at 25°C, and dimensions. Key features include excellent current gain linearity and low saturation voltage. Maximum ratings include collector-emitter voltage of 20V and collector current of 1A. Typical current gain is 60-240. Saturation voltage is typically below 0.5V.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    47 views3 pages

    TPT 5609

    Uploaded by

    Aram Castellanos
    This document provides specifications for an NPN epitaxial silicon transistor. It lists maximum ratings, electrical characteristics at 25°C, and dimensions. Key features include excellent current gain linearity and low saturation voltage. Maximum ratings include collector-emitter voltage of 20V and collector current of 1A. Typical current gain is 60-240. Saturation voltage is typically below 0.5V.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 3

    MCC   omponents

    Micro Commercial Components


    TM

    20736 Marilla Street Chatsworth TPT5609


    
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    $ %    !"#

    Features
    x Excellent linearity of Current Gain
    x Low saturation voltage NPN Epitaxial
    Silicon Transistor

    Maximum Ratings
    Symbol Rating Rating Unit
    VCEO Collector-Emitter Voltage 20 V TO-92L
    VCBO Collector-Base Voltage 25 V
    VEBO Emitter-Base Voltage 5.0 V
    IC Collector Current 1.0 A
    PC Collector power dissipation 0.75 W
    O
    TJ Junction Temperature -55 to +150 C
    O
    TSTG Storage Temperature -55 to +150 C

    Electrical Characteristics @ 25OC Unless Otherwise Specified


    Symbol Parameter Min Typ Max Units
    OFF CHARACTERISTICS
    BVCBO Collector-Base Breakdown Voltage 25 --- --- Vdc
    (IC=10ӴAdc, IE=0)
    BVCEO Collector-Emitter Breakdown Voltage 20 --- --- Vdc
    (IC=1mAdc, IB=0)
    BVEBO Emitter-Base Breakdown Voltage 5.0 --- --- Vdc
    (IE=10uAdc, IC=0)
    ICBO Collector Cutoff Current --- --- 1 uAdc
    (VCB=20Vdc,IE=0)
    IEBO Emitter Cutoff Current --- --- 1 uAdc B C E
    (VEB=5.0Vdc, IC=0)
    ON CHARACTERISTICS
    hFE DC Current gain 60 --- 240 ---
    (IC=500mAdc, VCE=2.0Vdc)
    VBE(on) Base-Emitter On Voltage --- --- 1.0 Vdc
    (VCE=2.0Vdc, IC=500mAdc)
    VCE(sat) Collector-Emitter Saturation Voltage --- --- 0.5 Vdc
    (IC=800mAdc, IB=80mAdc)
    DIMENSIONS
    fT Current Gain Bandwidth Product --- 190 --- MHz INCHES MM
    (VCE=2.0Vdc, IC=500mAdc) DIM MIN MAX MIN MAX NOTE
    Cob Output Capacitance --- 22 --- pF A 3.700 4.100 .146 .161
    (VCB=10Vdc, IE=0, f=1.0MHz) B 4.000 --- .157 ---
    C 0.000 0.300 0.000 0.012
    D 0.350 0.450 .014 .018
    E 1.280 1.580 .050 .062
    CLASSIFICATION OF hFE F 4.700 5.100 .185 .201
    Rank A B C G 7.800 8.200 .307 .323
    H 13.80 14.20 .543 .559
    Range 60-120 85-170 120-240 J .600 .800 .024 .031
    K 0.350 .550 .014 .022
    L 1.270 .050
    M 2.440 2.640 .096 .104

    www.mccsemi.com
    1 of 3
    Revision: 1 2007/12/14
    TPT5609 MCC TM

    Micro Commercial Components

    www.mccsemi.com
    2 of 3
    Revision: 1 2007/12/14
    MCC TM

    Micro Commercial Components

    ***IMPORTANT NOTICE***
    Micro Commercial Components Corp . reserves the right to make changes without further notice to any
    product herein to make corrections, modifications , enhancements , improvements , or other changes .
    Micro Commercial Components Corp . does not assume any liability arising out of the application or
    use of any product described herein; neither does it convey any license under its patent rights ,nor
    the rights of others . The user of products in such applications shall assume all risks of such use
    and will agree to hold Micro Commercial Components Corp . and all the companies whose
    products are represented on our website, harmless against all damages.

    ***APPLICATIONS DISCLAIMER***

    Products offer by Micro Commercial Components Corp . are not intended for use in Medical,

    Aerospace or Military Applications.

    www.mccsemi.com
    Revision: 1
    3 of 3
    2007/12/14

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