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N-Channel 60 V (D-S) MOSFET

PRODUCT SUMMARY FEATURES

VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) • Halogen-free According to IEC 61249-2-21
d
Definition
0.032 at VGS = 10 V 35
60 21.7 • TrenchFET® Power MOSFET
0.037 at VGS = 4.5 V 30 d • 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS
D • Power Supply
TO-251 - Secondary Synchronous Rectification
• DC/DC Converter

S
G D S
Top View N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit
Drain-Source Voltage VDS 60
V
Gate-Source Voltage VGS ± 20
TC = 25 °C 35 d
Continuous Drain Current (TJ = 150 °C) ID
TC = 70 °C 30d
A
Pulsed Drain Current IDM 100
Avalanche Current IAS 40
a L = 0.1 mH EAS 80 mJ
Single Avalanche Energy
TC = 25 °C b
59.5
Maximum Power Dissipationa c
PD W
TA = 25 °C 2.7
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C

THERMAL RESISTANCE RATINGS

Parameter Symbol Limit Unit
c RthJA 46
Junction-to-Ambient (PCB Mount)
°C/W
Junction-to-Case (Drain) RthJC 2.1
Notes:
a. Duty cycle ≤ 1 %.
b. See SOA curve for voltage derating.
c. When mounted on 1" square PCB (FR-4 material).
d. Package limited.

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SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage VDS VDS = 0 V, ID = 250 µA 60
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 2.0 3.5
Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 250 nA
VDS = 60 V, VGS = 0 V 1
Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V, TJ = 125 °C 50 µA
VDS = 60 V, VGS = 0 V, TJ = 150 °C 250
On-State Drain Currenta ID(on) VDS ≥ 10 V, VGS = 10 V 50 A
VGS = 10 V, ID = 12 A 0.032
Drain-Source On-State Resistancea RDS(on) Ω
VGS = 4.5 V, ID = 10 A 0.037
Forward Transconductancea gfs VDS = 15 V, ID = 10 A 110 S
Dynamicb
Input Capacitance Ciss 1100
Output Capacitance Coss VGS = 0 V, VDS = 30 V, f = 1 MHz 281 pF
Reverse Transfer Capacitance Crss 130
VDS = 30 V, VGS = 10 V, ID = 10 A 46
Total Gate Chargec Qg
28
c nC
Gate-Source Charge Qgs VDS = 30 V, VGS = 4.5 V, ID = 10 A 7
Gate-Drain Chargec Qgd 6.7
Gate Resistance Rg f = 1 MHz 0.4 2 4 Ω
Turn-On Delay Timec td(on) 8 16
Rise Timec tr VDD = 30 V, RL = 1.5 Ω 9 18
ns
Turn-Off Delay Timec td(off) ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω 35 53
Fall Timec tf 9 18
Drain-Source Body Diode Ratings and Characteristics TC = 25 °Cb
Continuous Current IS 50
A
Pulsed Current ISM 100
Forward Voltagea VSD IF = 10 A, VGS = 0 V 0.75 1.5 V
Reverse Recovery Time trr 34 51 ns
Peak Reverse Recovery Current IRM(REC) IF = 10 A, dI/dt = 100 A/µs 2 3 A
Reverse Recovery Charge Qrr 34 51 nC
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50 0.070

V GS = 10 V thru 5V
20

R DS(on) - On-Resistance (Ω)

0.050
I D - Drain Current (A)

V GS = 4 V
15 V GS = 4.5 V

0.040

10
V GS = 10 V

0.030
05

0 0.020
0.0 0.5 1.0 1.5 2.0 0 20 40 60 80 100

V DS - Drain-to-Source Voltage (V) ID - Drain Current (A)

Drain to Source Voltage vs. ID On-Resistance vs. Drain Current

5 0.070

4 0.060
R DS(on) - On-Resistance (Ω)
I D - Drain Current (A)

3 0.050
T J = 150 °C
T C = 25 °C
2 0.040
T J = 25 °C

1 0.030
T C = 125 °C

T C = - 55 °C
0 0.020
0 1 2 3 4 5 2 4 6 8 10

V GS - Gate-to-Source Voltage (V) V GS - Gate-to-Source Voltage (V)

Transfer Characteristics On-Resistance vs. Gate-to-Source Voltage

180 10

ID = 10 A
VGS - Gate-to-Source Voltage (V)

8
g fs - Transconductance (S)

135
T C = - 55 °C V DS = 30 V
6
T C = 25 °C V DS = 24 V V DS = 48 V
90

4
T C = 125 °C
45
2

0 0
0 6 12 18 24 30 0 10 20 30 40 50

ID - Drain Current (A) Qg - Total Gate Charge (nC)

Transconductance Gate Charge

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100 2.1

1.7
T J = 150 °C
I S - Source Current (A)

ID = 250 μA
10

VGS(th) (V)
1.3

T J = 25 °C
1
0.9

0.1 0.5
0.0 0.3 0.6 0.9 1.2 - 50 - 25 0 25 50 75 100 125 150 175

V SD - Source-to-Drain Voltage (V) T J - Temperature (°C)

Source-Drain Diode Forward Voltage Threshold Voltage

1500 43
V DS - Drain-to-Source Voltage (V)

1200 Ciss 41
ID = 250 μA
C - Capacitance (pF)

900 39

600 37

Coss
300 35

Crss
0 33
0 5 10 15 20 25 30 - 50 - 25 0 25 50 75 100 125 150 175

V DS - Drain-to-Source Voltage (V) T J - Temperature (°C)

Capacitance Drain Source Breakdown vs. Junction Temperature

2.0 50

ID = 10 A
1.7 V GS = 10 V 30
R DS(on) - On-Resistance

I D - Drain Current (A)

(Normalized)

1.4 20
V GS = 4.5 V Package Limited

1.1 10

0.8 05

0.5 0
- 50 - 25 0 25 50 75 100 125 150 175 0 25 50 75 100 125 150

T J - Junction Temperature (°C) T C - Case Temperature (°C)

On-Resistance vs. Junction Temperature Current Derating

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20 50

Limited by R DS(on)*
20

I D - Drain Current (A)

100 μA
10
1 ms
I DAV (A)

TJ = 150 °C TJ = 25 °C 10 ms
10 100 ms
1 s, 10 s, DC
1

0.1 T C = 25 °C
Single Pulse BVDSS
Limited

1 0.01
10-6 10-5 10-4 10-3 10-2 10-1 0.1 1 10 100
Time (s) V DS - Drain-to-Source Voltage (V)
Single Pulse Avalanche Current Capability vs. Time * V GS > minimum VGS at which RDS(on) is specified
Safe Operating Area

1
Normalized Effective Transient

Duty Cycle = 0.5

Thermal Impedance

0.2

0.1
0.05

0.02

Single Pulse
0.1
10 -4 10 -3 10 -2 10 -1 1 10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case

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TOĆ251AA (DPAK)

E A
L2
b2 c1 MILLIMETERS INCHES
Dim Min Max Min Max
A 2.21 2.38 0.087 0.094
A1 0.89 1.14 0.035 0.045

D b 0.71 0.89 0.028 0.035

b1 0.76 1.14 0.030 0.045
b2 5.23 5.43 0.206 0.214
c 0.46 0.58 0.018 0.023
L3 L1
c1 0.46 0.58 0.018 0.023
D 5.97 6.22 0.235 0.245
b1 E 6.48 6.73 0.255 0.265
L e 2.28 BSC 0.090 BSC
L 8.89 9.53 0.350 0.375
L1 1.91 2.28 0.075 0.090
L2 0.89 1.27 0.035 0.050
L3 1.15 1.52 0.045 0.060
b e c ECN: S-03946—Rev. E, 09-Jul-01
DWG: 5346
A1

Note: Dimension L3 is for reference only.

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