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    Nte 48

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    julio quatrini
    The NTE48 is a silicon NPN transistor intended for use as a general purpose amplifier or in applications requiring high current. It is a Darlington transistor configuration. Key specifications include a continuous collector current rating of 1000mA, DC current gain ranging from 25,000 to 40,000, and operating temperature range of -55°C to +150°C. Electrical characteristics including breakdown voltages and gain are provided.

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    Nte 48

    Uploaded by

    julio quatrini
    9 views2 pages
    The NTE48 is a silicon NPN transistor intended for use as a general purpose amplifier or in applications requiring high current. It is a Darlington transistor configuration. Key specifications include a continuous collector current rating of 1000mA, DC current gain ranging from 25,000 to 40,000, and operating temperature range of -55°C to +150°C. Electrical characteristics including breakdown voltages and gain are provided.

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    The NTE48 is a silicon NPN transistor intended for use as a general purpose amplifier or in applications requiring high current. It is a Darlington transistor configuration. Key specifications include a continuous collector current rating of 1000mA, DC current gain ranging from 25,000 to 40,000, and operating temperature range of -55°C to +150°C. Electrical characteristics including breakdown voltages and gain are provided.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    9 views2 pages

    Nte 48

    Uploaded by

    julio quatrini
    The NTE48 is a silicon NPN transistor intended for use as a general purpose amplifier or in applications requiring high current. It is a Darlington transistor configuration. Key specifications include a continuous collector current rating of 1000mA, DC current gain ranging from 25,000 to 40,000, and operating temperature range of -55°C to +150°C. Electrical characteristics including breakdown voltages and gain are provided.

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    NTE48

    Silicon NPN Transistor


    Darlington, General Purpose Amplifier,
    High Current

    Absolute Maximum Ratings:


    Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
    Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
    Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V
    Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000mA
    Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W
    Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.0mW/°C
    Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5W
    Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mW/°C
    Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
    Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
    Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50°C/W
    Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125°C/W

    Electrical Characteristics: (TA = +25°C unless otherwise specified)


    Parameter Symbol Test Conditions Min Typ Max Unit
    OFF Characteristics
    Collector–Emitter Breakdown V(BR)CES IC = 1mA, IB = 0, Note 1 50 – – V
    Voltage
    Collector–Base Breakdown Voltage V(BR)CBO IC = 1.0µA, IE = 0 600 – – V
    Emitter–Base Breakdown Voltage V(BR)EBO IE = 10µA, IC = 0 12 – – V
    Collector Cutoff Voltage ICBO VCB = 40V, IE = 0 – – 100 nA
    Emitter Cutoff Current IEBO VBE = 10V, IC = 0 – – 100 nA
    Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
    Parameter Symbol Test Conditions Min Typ Max Unit
    ON Characteristics (Note 1)
    DC Current Gain hFE IC = 200mA, VCE = 5V 25,000 – –
    IC = 1000mA, VCE = 5V 4,000 – 40,000
    Collector–Emitter Saturation Voltage VCE(sat) IC = 1000mA, IB = 2mA – – 1.5 V
    Base–Emitter ON Voltage VBE(on) IC = 1000mA, VCE = 5V – – 2.0 V
    Small–Signal Characteristics
    Current Gain–Bandwidth Product fT IC = 200mA, VCE = 5V, 100 – 1000 MHz
    f = 100MHz
    Collector–Base Capacitance Ccb VCB = 10V, IE = 0, f = 1MHz – – 10 pF

    Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%

    .339
    (8.62)
    Max
    Seating Plane

    .026 (.66)
    .512 Dia Max
    C
    (13.0)
    B Min

    E B C

    .100 (2.54)

    .200
    (5.08)
    Max

    .240 (6.09) Max

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