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    NTE238 Silicon NPN Transistor Color TV, Horizontal Output: Description

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    HFEBFEKBFEKFBJK
    The document describes the NTE238, a silicon NPN transistor in a TO-3 package for use as a horizontal deflection transistor in color TVs. It has a maximum collector-emitter voltage of 1500V and can operate safely at 20A and 400V for 50us pulses. Absolute maximum ratings and typical electrical characteristics are provided.

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    NTE238 Silicon NPN Transistor Color TV, Horizontal Output: Description

    Uploaded by

    HFEBFEKBFEKFBJK
    32 views2 pages
    The document describes the NTE238, a silicon NPN transistor in a TO-3 package for use as a horizontal deflection transistor in color TVs. It has a maximum collector-emitter voltage of 1500V and can operate safely at 20A and 400V for 50us pulses. Absolute maximum ratings and typical electrical characteristics are provided.

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    The document describes the NTE238, a silicon NPN transistor in a TO-3 package for use as a horizontal deflection transistor in color TVs. It has a maximum collector-emitter voltage of 1500V and can operate safely at 20A and 400V for 50us pulses. Absolute maximum ratings and typical electrical characteristics are provided.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    32 views2 pages

    NTE238 Silicon NPN Transistor Color TV, Horizontal Output: Description

    Uploaded by

    HFEBFEKBFEKFBJK
    The document describes the NTE238, a silicon NPN transistor in a TO-3 package for use as a horizontal deflection transistor in color TVs. It has a maximum collector-emitter voltage of 1500V and can operate safely at 20A and 400V for 50us pulses. Absolute maximum ratings and typical electrical characteristics are provided.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
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    NTE238

    Silicon NPN Transistor


    Color TV, Horizontal Output
    Description:
    The NTE238 is a silicon NPN horizontal deflection transistor in a TO3 type package designed for use
    in deflection circuits.

    Features:
    D VCEX = 1500V
    D Safe Operating Area @ 50µs = 20A, 400V

    Absolute Maximum Ratings;


    Collector–Emitter Voltage, VCEX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V
    Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
    Collector Current–Continuous, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
    Base Current–Continuous, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
    Emitter Current–Continuous, IE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A
    Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W
    Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8W/°C
    Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
    Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
    Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.25°C/W
    Maximum Lead Temperature (Soldering Purposes, 1/8” from case for 5sec), TL . . . . . . . . . +275°C

    Electrical Characteristics: (TC =+25°C unless otherwise specified)


    Parameter Symbol Test Conditions Min Typ Max Unit
    OFF Characteristics
    Collector–Emitter Sustaining Voltage VCEO(sus) VC = 50mA, IB = 0 750 – – V
    Collector Cutoff Current ICES VCE = 1500V, VBE = 0 – – 0.25 mA
    Emitter Cutoff Current IEBO VBE = 5V, IC = 0 – – 0.1 mA
    ON Characteristics (Note 1)
    Collector–Emitter Saturation Voltage VCE(sat) IC = 5A, IB = 1A – – 5.0 V
    Base Emitter Saturation Voltage VBE(sat) IC = 5A, IB = 1A – – 1.5 V
    SWITCHING CHARACTERISTICS
    Fall Time tf IC = 5A, IB1 = 1A, LB = 8µH – 0.4 1.0 µs

    Note 1. Pulse test: Pulse Width ≤ 300µs, Duty Cycle = 2%.


    .135 (3.45) Max
    .350 (8.89) .875 (22.2)
    Dia Max
    Seating
    Plane

    .312 (7.93) Min .040 (1.02)

    E 1.187 (30.16)

    .215 (5.45) .665


    (16.9)
    .156 (3.96) Dia
    (2 Holes)
    .430
    (10.92) .188 (4.8) R Max

    .525 (13.35) R Max


    B C/Case

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