Scribd Logo
Upload

Welcome to Scribd!

  • 4 views

    4N26 Nte3040

    Uploaded by

    Lucas Iwaniszyn
    The NTE3040 is an optoisolator with an infrared emitting diode coupled to an NPN transistor. It has maximum power ratings of 200mW for both the diode and transistor. The device operates from -55°C to 100°C and has high isolation voltages of 1500V peak and 1060V RMS between its input and output. It provides electrical isolation with DC current transfer ratios typically around 6%.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    4N26 Nte3040

    Uploaded by

    Lucas Iwaniszyn
    4 views2 pages
    The NTE3040 is an optoisolator with an infrared emitting diode coupled to an NPN transistor. It has maximum power ratings of 200mW for both the diode and transistor. The device operates from -55°C to 100°C and has high isolation voltages of 1500V peak and 1060V RMS between its input and output. It provides electrical isolation with DC current transfer ratios typically around 6%.

    Original Title

    4N26-Nte3040

    Copyright

    © © All Rights Reserved

    Available Formats

    PDF, TXT or read online from Scribd

    Did you find this document useful?

    Is this content inappropriate?

    The NTE3040 is an optoisolator with an infrared emitting diode coupled to an NPN transistor. It has maximum power ratings of 200mW for both the diode and transistor. The device operates from -55°C to 100°C and has high isolation voltages of 1500V peak and 1060V RMS between its input and output. It provides electrical isolation with DC current transfer ratios typically around 6%.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    4 views2 pages

    4N26 Nte3040

    Uploaded by

    Lucas Iwaniszyn
    The NTE3040 is an optoisolator with an infrared emitting diode coupled to an NPN transistor. It has maximum power ratings of 200mW for both the diode and transistor. The device operates from -55°C to 100°C and has high isolation voltages of 1500V peak and 1060V RMS between its input and output. It provides electrical isolation with DC current transfer ratios typically around 6%.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    You are on page 1of 2

    NTE3040

    Optoisolator
    NPN Transistor Output

    Description:
    The NTE3040 is a gallium arsenide, infrared emitting diode in a 6–Lead DIP type package coupled
    with a silicon phototransistor.

    Absolute Maximum Ratings: (TA = +25°C, unless otherwise specified)


    Infrared Emitting Diode
    Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW
    Derate above 25°C ambient . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.6mW/°C
    Forward Current (Continuous), IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60mA
    Forward Current (Peak), IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A
    (Pulse Width 1µsec, 300pps)
    Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V

    Phototransistor
    Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW
    Derate above 25°C ambient . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.6mW/°C
    Collector to Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
    Collector to Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V
    Emitter to Collector Voltage, VECO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
    Collector Current (Continuous), IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA

    Total Device
    Storage Temperature, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
    Operating Temperature, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +100°C
    Lead Soldering Temperature (10 seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +260°C
    Surge Isolation Voltage (Input to Output)
    (Peak) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V
    (RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1060V

    Electrical Characteristics: (TA = +25°C, unless otherwise specified)


    Parameter Symbol Test Conditions Min Typ Max Unit
    Infrared Emitting Diode
    Forward Voltage VF IF = 10mA – 1.1 1.5 V
    Reverse Current IR VR = 3V – – 10 mA
    Capacitance CJ V = 0, f = 1MHZ – 50 – pf
    Electrical Characteristics (Cont’d): (TA = +25°C, unless otherwise specified)
    Parameter Symbol Test Conditions Min Typ Max Unit
    Phototransistor
    Collector–Emitter Breakdown Voltage V(BR)CEO IC = 10mA, IF = 0 30 – – V
    Collector–Base Breakdown Voltage V(BR)CBO IC = 100µA, IF = 0 70 – – V
    Emitter–Collector Breakdown Voltage V(BR)ECO IE = 100µA, IF = 0 7 – – V
    Collector Dark Current ICEO VCE = 10V, IF = 0 – 5 50 nA
    Capacitance CJ VCE = 10V, f = 1MHZ – 2 – pf
    Coupled Characteristics
    DC Current Transfer Ratio CTR IF = 10mA, VCE = 10V 6 – – %
    Collector–Emitter Saturation Voltage VCEO(sat) IF = 60mA, IC = 1.6mA 100 – – V
    Isolation Resistance R(I–O) V(I–O) = 500VDC 100 – – GΩ
    Input to Output Capacitance C(I–O) V(I–O) = 0, f = 1MHZ – – 2 pf
    Switching Speeds tr, tf VCE = 10V, ICE = 2mA – 5 – µs
    Ω
    RL = 100Ω
    ICB = 50µA – 3 – µs

    Pin Connection Diagram

    Anode 1 6 Base

    Cathode 2 5 Collector

    N.C. 3 4 Emitter

    6 5 4 .260
    (6.6)
    Max
    1 2 3

    .070 (1.78) Max

    .350 (8.89) .300 (7.62)


    Max

    .200 (5.08)
    Max .350
    (8.89)
    Max

    .085 (2.16) Max .100 (2.54)

    You might also like