General Purpose Transistor (PNP) COMCHIP

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MMBT2907A
Features
Epitaxial Planar Die Construction
Complementary NPN Type Available (MMBT2222A)
Ideal for Medium Power Amplification and Switching
TO-236AB (SOT-23)
.122 (3.1)
.110 (2.8)
Mechanical Data .016 (0.4)
Top View
Case: SOT-23 Plastic Package
3
Weight: approx. 0.008g

.056 (1.43)
.052 (1.33)
COLLECTOR
3 1 2 Pin Configuration
1 = Base 2 = Emitter
3 = Collector

max. .004 (0.1)

1
.037(0.95) .037(0.95)

.007 (0.175)
.005 (0.125)
BASE

.045 (1.15)
.037 (0.95)
2
EMITTER

.102 (2.6)
.016 (0.4) .016 (0.4) .094 (2.4)
Dimensions in inches and (millimeters)

Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.

Rating Symbol 2907 2907A Unit

Collector – Emitter Voltage VCEO –40 –60 Vdc
Collector – Base Voltage VCBO –60 Vdc
Emitter – Base Voltage VEBO –5.0 Vdc
Collector Current — Continuous IC –600 mAdc

Characteristic Symbol Max Unit

Total Device Dissipation FR– 5 Board(1) PD 225 mW
TA = 25°C
Derate above 25°C 1.8 mW/°C
Thermal Resistance, Junction to Ambient RqJA 556 °C/W
Total Device Dissipation PD 300 mW
Alumina Substrate,(2) TA = 25°C
Derate above 25°C 2.4 mW/°C
Thermal Resistance, Junction to Ambient RqJA 417 °C/W
Junction and Storage Temperature TJ, Tstg – 55 to +150 °C

MDS030300B1 Page 1
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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(3) V(BR)CEO Vdc
(IC = –10 mAdc, IB = 0) MMBT2907 –40 —
MMBT2907A –60 —
Collector – Base Breakdown Voltage (IC = –10 mAdc, IE = 0) V(BR)CBO –60 — Vdc
Emitter – Base Breakdown Voltage (IE = –10 mAdc, IC = 0) V(BR)EBO –5.0 — Vdc
Collector Cutoff Current (VCE = –30 Vdc, VBE(off) = –0.5 Vdc) ICEX — –50 nAdc
Collector Cutoff Current ICBO µAdc
(VCB = –50 Vdc, IE = 0) MMBT2907 — –0.020
MMBT2907A — –0.010

(VCB = –50 Vdc, IE = 0, TA = 125°C) MMBT2907 — –20

MMBT2907A — –10
Base Current (VCE = –30 Vdc, VEB(off) = –0.5 Vdc) IB — –50 nAdc

ON CHARACTERISTICS
DC Current Gain hFE —
(IC = –0.1 mAdc, VCE = –10 Vdc) MMBT2907 35 —
MMBT2907A 75 —

(IC = –1.0 mAdc, VCE = –10 Vdc) MMBT2907 50 —

MMBT2907A 100 —

(IC = –10 mAdc, VCE = –10 Vdc) MMBT2907 75 —

MMBT2907A 100 —

(IC = –150 mAdc, VCE = –10 Vdc) (3) MMBT2907 — —

MMBT2907A 100 300

(IC = –500 mAdc, VCE = –10 Vdc) (3) MMBT2907 30 —

MMBT2907A 50 —

Collector – Emitter Saturation Voltage (3) VCE(sat) Vdc

(IC = –150 mAdc, IB = –15 mAdc) — –0.4
(IC = –500 mAdc, IB = –50 mAdc) — –1.6
Base – Emitter Saturation Voltage (3) VBE(sat) Vdc
(IC = –150 mAdc, IB = –15 mAdc) — –1.3
(IC = –500 mAdc, IB = –50 mAdc) — –2.6

1.FR-5 = 1.0 X 0.75 X 0.062 in.

2.Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina.

MDS030300B1 Page 2
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SMALL– SIGNAL CHARACTERISTICS

Current – Gain — Bandwidth Product (3),(4) fT MHz
(IC = –50 mAdc, VCE = –20 Vdc, f = 100 MHz) 200 —
Output Capacitance Cobo pF
(VCB = –10 Vdc, IE = 0, f = 1.0 MHz) — 8.0
Input Capacitance Cibo pF
(VEB = –2.0 Vdc, IC = 0, f = 1.0 MHz) — 30

SWITCHING CHARACTERISTICS
Turn–On Time ton — 45
(VCC = –30 Vdc, IC = –150 mAdc,
Delay Time td — 10 ns
IB1 = –15
15 mAdc)
mAdc
Rise Time tr — 40
Turn–Off Time toff — 100
(VCC = –6.0 Vdc, IC = –150 mAdc,
Storage Time ts — 80 ns
IB1 = IB2 = –15
15 mAdc)
mAdc
Fall Time tf — 30

3. Pulse Test: Pulse Width v

300 ms, Duty Cycle v2.0%.
4. fT is defined as the frequency at which |hfe| extrapolates to unity.

INPUT INPUT
Zo = 50 Ω –30 V Zo = 50 Ω +15 V –6.0 V
PRF = 150 PPS PRF = 150 PPS
RISE TIME ≤ 2.0 ns 200 RISE TIME ≤ 2.0 ns
1.0 k 37
P.W. < 200 ns P.W. < 200 ns
1.0 k 1.0 k
0 TO OSCILLOSCOPE 0 TO OSCILLOSCOPE
RISE TIME ≤ 5.0 ns RISE TIME ≤ 5.0 ns
–16 V 50 –30 V 50 1N916

200 ns 200 ns

Figure 1. Delay and Rise Time Test Circuit Figure 2. Storage and Fall Time Test Circuit

MDS030300B1 Page 3
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TYPICAL CHARACTERISTICS

3.0
VCE = –1.0 V
2.0 VCE = –10 V TJ = 125°C
hFE , Normalized Current Gain

25°C

1.0

0.7 – 55°C

0.5

0.3

0.2
–0.1 –0.2 –0.3 –0.5 –0.7 –1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100 –200 –300 –500
I C, Collector Current (mA)

Figure 3. DC Current Gain

–1.0
VCE , Collector–Emitter Voltage (V)

–0.8
IC = –1.0 mA –10 mA –100 mA –500 mA

–0.6

–0.4

–0.2

0
–0.005 –0.01 –0.02 –0.03 –0.05 –0.07 –0.1 –0.2 –0.3 –0.5 –0.7 –1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50
I B, Base Current (mA)

Figure 4. Collector Saturation Region

300 500
200 300 VCC = –30 V
VCC = –30 V
IC/IB = 10 200 IC/IB = 10
100 tr
TJ = 25°C tf IB1 = IB2
70 100 TJ = 25°C
50
t, Time (ns)

t, Time (ns)

70
30 50
20 t′s = ts – 1/8 tf
30
td @ VBE(off) = 0 V
20
10
7.0 10
5.0 2.0 V
7.0
3.0 5.0
–5.0 –7.0 –10 –20 –30 –50 –70 –100 –200 –300 –500 –5.0 –7.0 –10 –20 –30 –50 –70 –100 –200 –300 –500
IC, Collector Current I C, Collector Current (mA)

Figure 5. Turn–On Time Figure 6. Turn–Off Time

MDS030300B1
MDS030300 Page 4
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TYPICAL SMALL– SIGNAL CHARACTERISTICS

NOISE FIGURE
VCE = 10 Vdc, TA = 25°C
10 10
f = 1.0 kHz
8.0 8.0
NF, Noise Figure (dB)

NF, Noise Figure (dB)

6.0 IC = –1.0 mA, Rs = 430 Ω 6.0 IC = –50 µA
–500 µA, Rs = 560 Ω
–100 µA
–50 µA, Rs = 2.7 kΩ
–500 µA
4.0 –100 µA, Rs = 1.6 kΩ 4.0 –1.0 mA

2.0 Rs = OPTIMUM SOURCE RESISTANCE 2.0

0 0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k
f, Frequency (kHz) R s, Source Resistance (OHMS)

Figure 7. Frequency Effects Figure 8. Source Resistance Effects

30 400
f T, Current–Gain — Bandwidth Product (MHz)

300
20 Ceb
200
C, Capacitance (pF)

10
100
7.0 80 VCE = –20 V
60 TJ = 25°C
5.0 Ccb
40
3.0 30

2.0 20
–0.1 –0.2 –0.3 –0.5 –1.0 –2.0 –3.0 –5.0 –10 –20 –30 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –500 –1000
Reverse Voltage (VOLTS) I C, Collector Current (mA)

Figure 9. Capacitances Figure 10. Current–Gain — Bandwidth Product

–1.0 +0.5
TJ = 25°C
VBE(sat) @ IC/IB = 10 0
–0.8 RqVC for VCE(sat)

–0.5
Coefficient (mV/ ° C)

VBE(on) @ VCE = –10 V

–0.6
V, Voltage (V)

–1.0
–0.4
–1.5

–0.2
–2.0 RqVB for VBE
VCE(sat) @ IC/IB = 10
0 –2.5
–0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –500 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –500
I C, Collector Current (mA) I C, Collector Current (mA)

Figure 11. “On” Voltage Figure 12. Temperature Coefficients

MDS030300B1 Page 5
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