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    Dual NPN Planar Transistors in To77 Package: Mechanical Data

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    OsamaAliBangash
    This document provides specifications for 2N2914, 2N2916, and 2N2918 dual NPN planar transistors in a TO-77 package. It includes mechanical dimensions, absolute maximum ratings, electrical characteristics, and transistor matching characteristics. The maximum collector-base voltage is 45V, continuous collector current is 30A, and total device dissipation is 300mW at 25°C ambient temperature.

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    Dual NPN Planar Transistors in To77 Package: Mechanical Data

    Uploaded by

    OsamaAliBangash
    46 views2 pages
    This document provides specifications for 2N2914, 2N2916, and 2N2918 dual NPN planar transistors in a TO-77 package. It includes mechanical dimensions, absolute maximum ratings, electrical characteristics, and transistor matching characteristics. The maximum collector-base voltage is 45V, continuous collector current is 30A, and total device dissipation is 300mW at 25°C ambient temperature.

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    2n2914_2n2916_2n2918

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    This document provides specifications for 2N2914, 2N2916, and 2N2918 dual NPN planar transistors in a TO-77 package. It includes mechanical dimensions, absolute maximum ratings, electrical characteristics, and transistor matching characteristics. The maximum collector-base voltage is 45V, continuous collector current is 30A, and total device dissipation is 300mW at 25°C ambient temperature.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    46 views2 pages

    Dual NPN Planar Transistors in To77 Package: Mechanical Data

    Uploaded by

    OsamaAliBangash
    This document provides specifications for 2N2914, 2N2916, and 2N2918 dual NPN planar transistors in a TO-77 package. It includes mechanical dimensions, absolute maximum ratings, electrical characteristics, and transistor matching characteristics. The maximum collector-base voltage is 45V, continuous collector current is 30A, and total device dissipation is 300mW at 25°C ambient temperature.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 2

    2N2914

    SEME 2N2916

    LAB 2N2918

    MECHANICAL DATA
    Dimensions in mm (inches)
    8.51 (0.335)
    9.40 (0.370)
    7.75 (0.305)
    DUAL NPN
    8.51 (0.335)
    PLANAR TRANSISTORS IN
    TO77 PACKAGE
    6.10 (0.240)
    6.60 (0.260)

    1.02
    (0.040)
    Max.
    12.7 (0.500)
    Min.

    0.41 (0.016)
    0.53 (0.021)

    5.08
    (0.200)
    2.54
    (0.100)

    2.54 4
    (0.100) 5
    0.74 (0.029)
    3 6 1.14 (0.045)
    2
    1

    45˚ 0.71 (0.028)


    0.86 (0.034)

    TO–77 PACKAGE
    PIN 1 – Collector 1 PIN 4 – Emitter 2
    PIN 2 – Base 1 PIN 5 – Base 2
    PIN 3 – Emitter 1 PIN 6 – Collector 2
    ABSOLUTE MAXIMUM RATINGS
    (Tamb = 25°C unless otherwise stated) EACH SIDE TOTAL DEVICE
    VCBO Collector – Base Voltage 45V
    VCEO Collector – Emitter Voltage 1 45V
    VEBO Emitter – Base Voltage 6V
    IC Continuous Collector Current 30
    PD Total Device Dissipation TAMB = 25°C 300mW 500mW
    Derate above 25°C 1.72mW / °C 2.86W / °C
    PD Total Device Dissipation TC = 25°C 750mW 1.5W
    Derate above 25°C 4.3mW / °C 8.6mW / °C
    TSTG Storage Temperature Range –65 to 200°C
    TL Lead temperature (Soldering, 10 sec.) 300°C

    NOTES
    1. Base – Emitter Diode Open Circuited.

    Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Prelim. 9/95
    E-mail: [email protected] Website: http://www.semelab.co.uk
    2N2914
    SEME 2N2916

    LAB 2N2918

    ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated)


    Parameter Test Conditions 1 Min. Typ. Max. Unit
    INDIVIDUAL TRANSISTOR CHARACTERISTICS
    V(BR)CBO Collector – Base Breakdown Voltage IC = 10mA IE = 0 45
    V(BR)CEO* Collector – Emitter Breakdown Voltage IC = 10mA IB = 0 45 V
    V(BR)EBO Emitter – Base Breakdown Voltage IE = 10mA IC = 0 6
    VCB = 45V IE = 0 10 nA
    ICBO Collector Cut-off Current
    TA = 150°C 10 mA
    ICEO Collector Cut-off Current VCE = 5V IB = 0 2
    nA
    IEBO Emitter Cut-off Current VEB = 5V IC = 0 2
    VCE = 5V IC = 10mA 150 600
    TA = –55°C 30
    hFE DC Current Gain —
    VCE = 5V IC = 100mA 225
    VCE = 5V IC = 1mA 300
    VBE Base – Emitter Voltage VCE = 5V IC = 100mA 0.70
    V
    VCE(sat) Collector – Emitter Saturation Voltage IB = 100mA IC = 1mA 0.35
    hib Small Signal Common – Base VCB = 5V IC = 1mA
    25 32 W
    Input Impedance f = 1kHz
    hob Small Signal Common – Base VCB = 5V IC = 1mA
    1 mmho
    Output Admittance f = 1kHz
    |hfe| Small Signal Common – Base VCE = 5V IC = 500mA
    3 —
    Current Gain f = 20MHz
    Cobo Common – Base Open Circuit VCB = 5V IE = 0
    6 pF
    Output Capacitance f = 140kHz to 1MHz
    * Pulse Test: tp = 300ms , d £ 1%.

    2N2916 2N2918
    Parameter Test Conditions Min. Typ. Max. Min. Typ. Max. Unit
    TRANSISTOR MATCHING CHARACTERISTICS
    hFE1 Static Forward Current VCE = 5V IC = 100mA
    0.9 1 0.8 1 —
    hFE2 Gain Balance Ratio See Note 2.
    Base – Emitter Voltage VCE = 5V IC = 100mA 3 5
    |VBE1 – VBE2| mV
    Differential VCE = 5V IC = 10mA to 1mA 5 10
    |D(VBE1 – VBE2)DTA| VCE = 5V IC = 100mA
    0.8 1.6
    Base – Emitter Voltage TA1 = 25°C TA2 = –55°C
    mV
    Differential Change With VCE = 5V IC = 100mA
    1 2
    Temperature TA1 = 25°C TA2 = 125°C
    NOTES
    1) Terminals not under test are open circuited under all test conditions.
    2) The lower of the two readings is taken as hFE1.
    Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Prelim. 9/95
    E-mail: [email protected] Website: http://www.semelab.co.uk

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