2SB1695K

Transistors

Low frequency amplifier

2SB1695K

!Application !External dimensions (Units : mm)

Low frequency amplifier
Driver

(1)

0.95 0.95
1.9
2.9
(2)
0.4

(3)
!Features 1.6
2.8
1) A collector current is large.

0.15

1.1
2) VCE(sat) ≤ −370mV

0.8
0~0.1
0.3Min.

At IC =− 1A / IB = −50mA
Each lead has same dimensions

ROHM : SMT3 Abbreviated symbol : FL (1) Emitter

EIAJ : SC-59 (2) Base
JEDEC : SOT-346 (3) Collector

!Absolute maximum ratings (Ta=25°C) !Packaging specifications

Parameter Symbol Limits Unit Package Taping
Collector-base voltage VCBO −30 V Code T146
Collector-emitter voltage VCEO −30 V
Type Basic ordering unit (pieces) 3000
Emitter-base voltage VEBO −6 V
IC −1.5 A 2SB1695K
Collector current
ICP −3 A∗
Power dissipation PC 200 mW
Junction temperature Tj 150 °C
Range of storage temperature Tstg −55~+150 °C
∗Single pulse, PW=1ms

!Electrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage BVCBO −30 − − V IC=−10µA
Collector-emitter breakdown voltage BVCEO −30 − − V IC=−1mA
Emitter-base breakdown voltage BVEBO −6 − − V IE=−10µA
Collector cutoff current ICBO − − −100 nA VCB=−30V
Emitter cutoff current IEBO − − −100 nA VEB=−6V
Collector-emitter saturation voltage VCE(sat) − −200 −370 mV IC=−1A, IB=−50mA
DC current gain hFE 270 − 680 − VCE=−2V, IC=−100mA ∗
Transition frequency fT − 280 − MHz VCE=−2V, IE=100mA, f=100MHz ∗
Corrector output capacitance Cob − 13 − pF VCB=−10V, IE=0A, f=1MHz
∗ Pulsed

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 2SB1695K
Transistors

!Electrical characteristic curves

1000 1 10

COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)

COLLECTOR SATURATION VOLTAGE : VCE (sat) (V)
VCE=−2V Ta=25°C
Ta=100°C
Pulsed Pulsed

BASE SATURATION VOLTAGE : VBE (sat) (V)

Ta=−40°C
Ta=25°C
DC CURRENT GAIN : hFE

Ta=25°C
VBE(sat) Ta=100°C 1
Ta=−40°C

100 0.1 0.1

IC/IB=50/1
IC/IB=10/1
Ta=100°C IC/IB=20/1
Ta=25°C 0.01
VCE(sat) Ta=−40°C

IC/IB=20/1
Pulsed
10 0.01 0.001
0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10
COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A)

Fig.1 DC current gain Fig.2 Collector-emitter saturation voltage Fig.3 Collector-emitter saturation voltage
vs. collector current base-emitter saturation voltage vs. collector current
vs. collector current

1 1000 1000
VCE=−2V Ta=25°C Ta=25°C
VCE=−2V VCE=−5V
TRANSITION FREQUENCY : fT (MHz)

Pulsed
IC/IB=20/1
COLLECTOR CURRENT : IC (A)

f=100MHz tstg

SWITCHING TIME : (ns)

Ta=100°C Ta=25°C
0.1 100
Ta=−40°C tf

100

tdon
0.01 10

tr

0.001 10 1
0 0.5 1 1.5 0.01 0.1 1 10 0.01 0.1 1 10

BASE TO EMITTER CURRENT : VBE (V) EMITTER CURRENT : IE (A) COLLECTOR CURRENT : IC (A)

Fig.4 Grounded emitter propagation Fig.5 Gain bandwidth product Fig.6 Switching time
characteristics vs. emitter current

1000 10
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)

Ta=25°C
EMITTER INPUT CAPACITANCE : Cib (pF)

IC=0A
f=1MHz 1m
COLLECTOR CURRENT : IC (A)

s
1 10
Cib ms
100 PW
=1
0 0m
DC s
0.1 Op
era
Cob tio
n
10
0.01

Ta=25°C
1 Single Pulse
0.001
0.1 1 10 100 0.1 1 10 100
EMITTER TO BASE VOLTAGE : VEB(V) COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTOR TO BASE VOLTAGE : VCB(V)

Fig.7 Collector output capacitance Fig.8 Safe Operating Area

vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage

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Appendix

Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
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otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document use silicon as a basic material.
Products listed in this document are no antiradiation design.

The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.

About Export Control Order in Japan

Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

Appendix1-Rev1.0
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