General Purpose Transistor

2N3906-G (PNP)
RoHS Device

Features TO-92

-PNP silicon epitaxial planar transistor for

0.185(4.70)
switching and amplifier application. 0.173(4.40)

-As complementary type, the NPN transistor 0. 135 ( 3. 43) M i n.

0.185(4.70)
0.169(4.30)
0.055 (1. 14)
0. 0 20( 0 .51 ) 0. 043(1. 10)
2N3904-G is recommended. 0. 0 14( 0. 36)
0.022(0.55)

0.130(3.30)
0.146(3.70)
-This transistor is available in the SOT-23 0.015(0.38)

case with the type designation MMBT3906-G.

0. 5 71(1 4 .5 0 )
0.555 (1 4. 1 0)
0. 01 5( 0. 38 ) M ax. 0.0 63(1. 60 ) Ma x.

Collector
3

0.050(1.270)TYP
°° 1. Emitter

2 0.104(2.64) 2. Base
Base 0.096(2.44)

1 2 3 3. Collector

1
Emitter Dimensions in inches and (millimeter)

Maximum Ratings (at TA=25°C unless otherwise noted)

Parameter Symbol Min Max Unit

Collector-Base voltage VCBO -40 V

Collector-Emitter voltage VCEO -40 V

Emitter-Base voltage VEBO -5 V

Collector Current-Continuous IC -0.2 A

Collector Dissipation PC 0.625 W

O
Storage Temperature and Junction Temperature TSTG , TJ -55 +150 C

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Electrical Characteristics (at TA=25°C unless otherwise noted)

Parameter Conditions Symbol Min Max Unit

Collector-Base breakdown voltage IC =-10μA , IE=0 V(BR)CBO -40 V

Collector-Emitter breakdown voltage IC =-1mA , IB=0 V(BR)CEO -40 V

Emitter-Base breakdown voltage IE =-10μA , IC=0 V(BR)EBO -5 V

Collector cut-off current VCB=-40V , IE=0 ICBO -0.1 µA

Collector cut-off current VCE=-30V , VBE(off)=-3V ICEX -50 µA

Emitter cut-off current VEB=-5V , IC=0 IEBO -0.1 µA

VCE=-1V , IC=-10mA hFE(1) 100 400

DC current gain VCE=-1V , IC=-50mA hFE(2) 60

VCE=-1V , IC=-100mA hFE(3) 30

Collector-Emitter saturation voltage IC=-50mA , IB=-5mA VCE(sat) -0.4 V

Base-emitter saturation voltage IC=-50mA , IB=-5mA VBE(sat) -0.95 V

VCE=-20V , IC=-10mA
Transition frequency fT 250 MHz
f=100MHz

Delay time VCC=-3V , VBE=-0.5V td 35 nS

Rise time IC=-10mA , IB1=-1mA tr 35 nS

Storage time VCC=-3V , IC=-10mA ts 225 nS

Fall time IB1=IB2=-1mA tf 75 nS

Classification of hFE(1)
Rank O Y G
Range 100-200 200-300 300-400

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RATING AND CHARACTERISTIC CURVES (2N3906-G)

Fig.1 - IC-Vce Fig.2 - Vec-Ic

-0.08 -2.0

ib=200uA
COMMON
EMITTER 350u
-0.07

Collector-Emitter Voltage, Vce (V)

Ta=25°C
300u

400u
Collector Current, Ic (A)

600u
-0.06 -1.5

800u
250u

1m
1.2m
-0.05

m
200u

1.4
-0.04 150u
-1.0

-0.03 100u

-0.02 -0.5
ib=50uA
COMMON
-0.01 EMITTER
Ta=25°C

-0.00 -0
-0 -2 -4 -6 -8 -10 -0 -0.02 -0.04 -0.06 -0.08 -0.10

Collector Emitter Voltage, Vce (A) Collector Current, IC (A)

Fig.3 - Vcesat-Ic Fig.4 - hFE-Ic

Vbesat-Ic
Collector Emitter Saturation Voltage VCE(sat)-V

-2.5 260

240
-2.0
DC Current Gain HFE

200 Vce=1v

-1.5
160

-1.0 120

80
-0.5
COMMON
40 EMITTER
Ta=25°C

-0.0 0
1 4 10 100 0 -1 -10 -100

Collector Current, IC (mA) Collector Current, Ic (mA)

Fig.5 - PC-Ta

800
Collector Power Dissipation pc , (mW)

700

600

500

400

300

200

100

0
0 10 30 50 70 90 110 130 150

Ambient Temperature, Ta (°C)

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Standard Packaging

Bag BOX CARTON

Case Type
(EA) (EA) (EA)

TO-92 1000 10000 100000

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