93LC46
93LC46
93LC46
93C46A/B/C
1K Microwire Compatible Serial EEPROM
Device Selection Table
Part Number VCC Range ORG Pin Word Size Temp Ranges Packages
93AA46A 1.8-5.5 No 8-bit I P, SN, ST, MS, OT, MC
93AA46B 1.8-5-5 No 16-bit I P, SN, ST, MS, OT, MC
93LC46A 2.5-5.5 No 8-bit I, E P, SN, ST, MS, OT, MC
93LC46B 2.5-5.5 No 16-bit I, E P, SN, ST, MS, OT, MC
93C46A 4.5-5.5 No 8-bit I, E P, SN, ST, MS, OT, MC
93C46B 4.5-5.5 No 16-bit I, E P, SN, ST, MS, OT, MC
93AA46C 1.8-5.5 Yes 8- or 16-bit I P, SN, ST, MS, MC
93LC46C 2.5-5.5 Yes 8- or 16-bit I, E P, SN, ST, MS, MC
93C46C 4.5-5.5 Yes 8- or 16-bit I, E P, SN, ST, MS, MC
TSSOP/MSOP SOT-23
(ST, MS) (OT)
CS 1 8 VCC DO 1 6 VCC
CLK 2 7 NC
DI 3 6 ORG* VSS 2 5 CS
DO 4 5 VSS
DI 3 4 CLK
DFN
(MC)
CS 1 8 VCC
CLK 2 7 NC
DI 3 6 ORG*
DO 4 5 VSS
† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only and functional operation of the device at those or any other conditions
above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating
conditions for extended periods may affect device reliability.
Param.
Symbol Parameter Min Typ Max Units Conditions
No.
D1 VIH1 High-level input voltage 2.0 — VCC +1 V VCC ≥ 2.7V
VIH2 0.7 VCC — VCC +1 V VCC < 2.7V
D2 VIL1 Low-level input voltage -0.3 — 0.8 V VCC ≥ 2.7V
VIL2 -0.3 — 0.2 VCC V VCC < 2.7V
D3 VOL1 Low-level output voltage — — 0.4 V IOL = 2.1 mA, VCC = 4.5V
VOL2 — — 0.2 V IOL = 100 μA, VCC = 2.5V
D4 VOH1 High-level output voltage 2.4 — — V IOH = -400 μA, VCC = 4.5V
VOH2 VCC - 0.2 — — V IOH = -100 μA, VCC = 2.5V
D5 ILI Input leakage current — — ±1 μA VIN = VSS or VCC
D6 ILO Output leakage current — — ±1 μA VOUT = VSS or VCC
D7 CIN, Pin capacitance — — 7 pF VIN/VOUT = 0V (Note 1)
COUT (all inputs/outputs) TA = 25°C, FCLK = 1 MHz
D8 ICC Write current — — 2 mA FCLK = 3 MHz, VCC = 5.5V
write — 500 — μA FCLK = 2 MHz, VCC = 2.5V
D9 ICC read Read current — — 1 mA FCLK = 3 MHz, VCC = 5.5V
— — 500 μA FCLK = 2 MHz, VCC = 3.0V
— 100 — μA FCLK = 2 MHz, VCC = 2.5V
D10 ICCS Standby current — — 1 μA I-Temp
— — 5 μA E-Temp
CLK = CS = 0V
ORG = DI = VSS or VCC
(Note 2) (Note 3)
D11 VPOR VCC voltage detect (Note 1)
— 1.5 — V 93AA46A/B/C, 93LC46A/B/C
— 3.8 — V 93C46A/B/C
Note 1: This parameter is periodically sampled and not 100% tested.
2: ORG pin not available on ‘A’ or ‘B’ versions.
3: Ready/Busy status must be cleared from DO; see Section 3.4 "Data Out (DO)".
Param.
Symbol Parameter Min Max Units Conditions
No.
A1 FCLK Clock frequency — 3 MHz 4.5V ≤ VCC < 5.5V, 93XX46C only
2 MHz 2.5V ≤ VCC < 5.5V
1 MHz 1.8V ≤ VCC < 2.5V
A2 TCKH Clock high time 200 — ns 4.5V ≤ VCC < 5.5V, 93XX46C only
250 ns 2.5V ≤ VCC < 5.5V
450 ns 1.8V ≤ VCC < 2.5V
A3 TCKL Clock low time 100 — ns 4.5V ≤ VCC < 5.5V, 93XX46C only
200 ns 2.5V ≤ VCC < 5.5V
450 ns 1.8V ≤ VCC < 2.5V
A4 TCSS Chip Select setup time 50 — ns 4.5V ≤ VCC < 5.5V
100 ns 2.5V ≤ VCC < 4.5V
250 ns 1.8V ≤ VCC < 2.5V
A5 TCSH Chip Select hold time 0 — ns 1.8V ≤ VCC < 5.5V
A6 TCSL Chip Select low time 250 — ns 1.8V ≤ VCC < 5.5V
A7 TDIS Data input setup time 50 — ns 4.5V ≤ VCC < 5.5V, 93XX46C only
100 2.5V ≤ VCC < 5.5V
250 1.8V ≤ VCC < 2.5V
A8 TDIH Data input hold time 50 — ns 4.5V ≤ VCC < 5.5V, 93XX46C only
100 2.5V ≤ VCC < 5.5V
250 1.8V ≤ VCC < 2.5V
A9 TPD Data output delay time — 200 ns 4.5V ≤ VCC < 5.5V, CL = 100 pF
— 250 2.5V ≤ VCC < 4.5V, CL = 100 pF
— 400 1.8V ≤ VCC < 2.5V, CL = 100 pF
A10 TCZ Data output disable time — 100 ns 4.5V ≤ VCC < 5.5V, (Note 1)
— 200 1.8V ≤ VCC < 4.5V, (Note 1)
A11 TSV Status valid time — 200 ns 4.5V ≤ VCC < 5.5V, CL = 100 pF
300 2.5V ≤ VCC < 4.5V, CL = 100 pF
500 1.8V ≤ VCC < 2.5V, CL = 100 pF
A12 TWC Program cycle time — 6 ms Erase/Write mode (AA and LC
versions)
A13 TWC — 2 ms Erase/Write mode (93C versions)
A14 TEC — 6 ms ERAL mode, 4.5V ≤ VCC ≤ 5.5V
A15 TWL — 15 ms WRAL mode, 4.5V ≤ VCC ≤ 5.5V
A16 — Endurance 1M — cycles 25°C, VCC = 5.0V, (Note 2)
Note 1: This parameter is periodically sampled and not 100% tested.
2: This application is not tested but ensured by characterization. For endurance estimates in a specific
application, please consult the Total Endurance™ Model, which may be obtained from Microchip’s web
site at www.microchip.com.
VIH
CS
VIL TCSS TCKH TCKL
TCSH
VIH
CLK
VIL
TDIS TDIH
VIH
DI
VIL
TPD TCZ
TPD
VOH
DO
(Read) TCZ
VOL
TSV
DO VOH
(Program) Status Valid
VOL
TABLE 1-3: INSTRUCTION SET FOR X 16 ORGANIZATION (93XX46B OR 93XX46C WITH ORG = 1)
Instruction SB Opcode Address Data In Data Out Req. CLK Cycles
ERASE 1 11 A5 A4 A3 A2 A1 A0 — (RDY/BSY) 9
ERAL 1 00 1 0 X X X X — (RDY/BSY) 9
EWDS 1 00 0 0 X X X X — High-Z 9
EWEN 1 00 1 1 X X X X — High-Z 9
READ 1 10 A5 A4 A3 A2 A1 A0 — D15 - D0 25
WRITE 1 01 A5 A4 A3 A2 A1 A0 D15 - D0 (RDY/BSY) 25
WRAL 1 00 0 1 X X X X D15 - D0 (RDY/BSY) 25
TABLE 1-4: INSTRUCTION SET FOR X 8 ORGANIZATION (93XX46A OR 93XX46C WITH ORG = 0)
Instruction SB Opcode Address Data In Data Out Req. CLK Cycles
ERASE 1 11 A6 A5 A4 A3 A2 A1 A0 — (RDY/BSY) 10
ERAL 1 00 1 0 X X X X X — (RDY/BSY) 10
EWDS 1 00 0 0 X X X X X — High-Z 10
EWEN 1 00 1 1 X X X X X — High-Z 10
READ 1 10 A6 A5 A4 A3 A2 A1 A0 — D7 - D0 18
WRITE 1 01 A6 A5 A4 A3 A2 A1 A0 D7 - D0 (RDY/BSY) 18
WRAL 1 00 0 1 X X X X X D7 - D0 (RDY/BSY) 18
CLK
TSV TCZ
TWC
CLK
TSV TCZ
High-Z
DO Busy Ready
High-Z
TWC
CLK
DI 1 0 0 1 0 x ••• x
TSV TCZ
High-Z
DO Busy Ready
High-Z
TEC
VCC must be ≥4.5V for proper operation of ERAL.
CLK
DI 1 0 0 1 0 x ••• x
TSV TCZ
High-Z
DO Busy Ready
High-Z
TEC
CLK
DI 1 0 0 0 0 x ••• x
CS
CLK
1 0 0 1 1 x ••• x
DI
2.7 Read The output data bits will toggle on the rising edge of the
CLK and are stable after the specified time delay (TPD).
The READ instruction outputs the serial data of the Sequential read is possible when CS is held high. The
addressed memory location on the DO pin. A dummy memory data will automatically cycle to the next register
zero bit precedes the 8-bit (if ORG pin is low or A-version and output sequentially.
devices) or 16-bit (if ORG pin is high or B-version
devices) output string.
CS
CLK
DI 1 1 0 AN ••• A0
DO High-Z
0 Dx ••• D0 Dx ••• D0 Dx ••• D0
CS
CLK
DI 1 0 1 AN ••• A0 Dx ••• D0
TSV TCZ
High-Z
DO Busy Ready
High-Z
TWC
CS
CLK
DI 1 0 1 AN ••• A0 Dx ••• D0
TSV TCZ
High-Z
DO Busy Ready
High-Z
TWC
CS
CLK
DI 1 0 0 0 1 x ••• x Dx ••• D0
TSV TCZ
CS
CLK
DI 1 0 0 0 1 x ••• x Dx ••• D0
TSV TCZ
High-Z
DO Busy Ready
HIGH-Z
TWL
XXXXXXT 3L46BI
YWWNNN 5281L7
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T/XXXNNN I/P e3 1L7
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XXXX L46B
TYWW I528
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XXX 314
YWW 528
NN L7
Note: For very small packages with no room for the Pb-free JEDEC designator
e3 , the marking will only appear on the outer carton or reel label.
Note: In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
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Revision D
Corrections to Section 1.0, Electrical Characteristics.
Section 4.1, 6-Lead SOT-23 package to OT.
Revision E
Added DFN package.
Revision F
Added notes throughout.
Revision G (5/2008)
Revised Figures 2-1 through 2-4 and Figures 2-8
through 2-11; Revised Package Marking Information;
Replaced Package Drawings; Revised Product ID
section.
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01/02/08