L6385E

High-voltage high and low side driver

Features
■ High voltage rail up to 600V
DIP-8 SO-8
■ dV/dt immunity ±50V/nsec in full temperature
range
■ Driver current capability:
– 400mA source,
– 650mA sink Description
■ Switching times 50/30 nsec rise/fall with 1nF The L6385E is an high-voltage device,
load manufactured with the BCD"OFF-LINE"
■ CMOS/TTL Schmitt trigger inputs with technology. It has an Half - Bridge Driver structure
hysteresis and pull down that enables to drive independent referenced N
Channel Power MOS or IGBT. The High Side
■ Under voltage lock out on lower and upper (Floating) Section is enabled to work with voltage
driving section Rail up to 600V. The Logic Inputs are CMOS/TTL
■ Internal bootstrap diode compatible for ease of interfacing with controlling
■ Outputs in phase with inputs devices.

Figure 1. Block diagram

BOOTSTRAP DRIVER
8 Vboot

Cboot
VCC 3 H.V.
UV UV
HVG
DETECTION DETECTION R DRIVER
HVG
R
7
2 LEVEL S
HIN LOGIC OUT
SHIFTER
6 TO LOAD
VCC
1 5 LVG
LIN
LVG
DRIVER 4 GND

D97IN514B

October 2007 Rev 1 1/16

www.st.com 16
Contents L6385E

Contents

1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.3 Recommended operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Pin connection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3.1 AC operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3.2 DC operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3.3 Timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

4 Bootstrap driver . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
4.1 CBOOT selection and charging . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

5 Typical characteristic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

6 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

7 Order codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

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L6385E Electrical data

1 Electrical data

1.1 Absolute maximum ratings

Table 1. Absolute maximum ratings

Symbol Parameter Value Unit

Vout Output voltage -3 to Vboot -18 V

Vcc Supply voltage - 0.3 to +18 V
Vboot Floating supply voltage -1 to 618 V
Vhvg High sidegate output voltage -1 to Vboot V
Vlvg Low side gate output voltage -0.3 to Vcc +0.3 V
Vi Logic input voltage -0.3 to Vcc +0.3 V
dVout/dt Allowed output slew rate 50 V/ns
Ptot Total power dissipation (TJ = 85 °C) 750 mW
Tj Junction temperature 150 °C
Ts Storage temperature -50 to 150 °C

Note: ESD immunity for pins 6, 7 and 8 is guaranteed up to 900 V (Human Body Model)

1.2 Thermal data

Table 2. Thermal data

Symbol Parameter SO-8 DIP-8 Unit

Rth(JA) Thermal Resistance Junction to ambient 150 100 °C/W

1.3 Recommended operating conditions

Table 3. Recommended operating conditions

Symbol Pin Parameter Test condition Min Typ Max Unit

Vout (1)
6 Output voltage 580 V
(2) (1)
VBS 8 Floating supply voltage 17 V
fsw Switching frequency HVG,LVG load CL = 1nF 400 kHz
Vcc 3 Supply voltage 17 V
TJ Junction temperature -45 125 °C
1. If the condition Vboot - Vout < 18V is guaranteed, Vout can range from -3 to 580V
2. VBS = Vboot - Vout

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Pin connection L6385E

2 Pin connection

Figure 2. Pin connection (Top view)

LIN 1 8 Vboot
HIN 2 7 HVG
VCC 3 6 OUT
GND 4 5 LVG
D97IN517A

Table 4. Pin description

N° Pin Type Function

1 LIN I Low side driver logic input

2 HIN I High side driver logic input
3 Vcc Low voltage power supply
4 GND Ground
5 LVG (1) O Low side driver output
6 VOUT O High side driver floating reference
7 HVG (1) O High side driver output
8 Vboot Bootstrap supply voltage
1. The circuit guarantees 0.3V maximum on the pin (@ Isink = 10mA). This allows to omit the "bleeder"
resistor connected between the gate and the source of the external MOSFET normally used to hold the pin
low.

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L6385E Electrical characteristics

3 Electrical characteristics

3.1 AC operation

Table 5. AC operation electrical characteristcs (VCC = 15V; TJ = 25°C)

Symbol Pin Parameter Test condition Min Typ Max Unit

1 vs 5 High/low side driver turn-on

ton Vout = 0V 110 ns
2 vs 7 propagation delay
1 vs 5 High/low side driver turn-off
toff Vout = 0V 105 ns
2 vs 7 propagation delay
tr 5, 7 Rise time CL = 1000pF 50 ns
tf 5, 7 Fall time CL = 1000pF 30 ns

3.2 DC operation

Table 6. DC operation electrical characteristcs (VCC = 15V; TJ = 25°C)

Symbol Pin Parameter Test condition Min Typ Max Unit

Low supply voltage section

Vcc Supply voltage 17 V

Vccth1 Vcc UV turn on threshold 9.1 9.6 10.1 V
Vccth2 Vcc UV turn off threshold 7.9 8.3 8.8 V
Vcchys Vcc UV hysteresis 1.3 V
3
Undervoltage quiescent
Iqccu Vcc ≤ 9V 150 220 µA
supply current
Iqcc Quiescent current Vin = 15V 250 320 µA
Bootstrap driver on
Rdson Vcc ≥12.5V 125 Ω
resistance (1)

Bootstrapped supply voltage section

VBS Bootstrap supply voltage 17 V

VBSth1 VBS UV turn on threshold 8.5 9.5 10.5 V
VBSth2 VBS UV turn off threshold 7.2 8.2 9.2 V
VBShys 8 VBS UV hysteresis 1.3 V
IQBS VBS quiescent current HVG ON 200 µA
Vhvg = Vout =
ILK High voltage leakage current 10 µA
Vboot = 600V

High/low side driver

Iso Source short circuit current VIN = Vih (tp < 10µs) 300 400 mA
5,7
Isi Sink short circuit current VIN = Vil (tp < 10µs) 450 650 mA

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Electrical characteristics L6385E

Table 6. DC operation electrical characteristcs (continued)(VCC = 15V; TJ = 25°C)

Symbol Pin Parameter Test condition Min Typ Max Unit

Logic inputs

Low level logic threshold

Vil 1.5 V
voltage
1, 2
High level logic threshold
Vih 3.6 V
voltage
Iih High level logic input current VIN = 15V 50 70 µA
1, 2
Iil Low level logic input current VIN = 0V 1 µA
1. RDS(on) is tested in the following way:
( V CC – V CBOOT1 ) – ( V CC – V CBOOT2 )
R DSON = ------------------------------------------------------------------------------------------------------
-
I 1 ( V CC ,V CBOOT1 ) – I 2 ( V CC ,V CBOOT2 )
where I1 is pin 8 current when VCBOOT = VCBOOT1, I2 when VCBOOT = VCBOOT2

3.3 Timing diagram

Figure 3. Input/output timing diagram

HIN

HVG

LIN

LVG
D99IN1053

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L6385E Bootstrap driver

4 Bootstrap driver

A bootstrap circuitry is needed to supply the high voltage section. This function is normally
accomplished by a high voltage fast recovery diode (Figure 4 a). In the L6385E a patented
integrated structure replaces the external diode. It is realized by a high voltage DMOS,
driven synchronously with the low side driver (LVG), with in series a diode, as shown in
Figure 4 b. An internal charge pump (Figure 4 b) provides the DMOS driving voltage. The
diode connected in series to the DMOS has been added to avoid undesirable turn on of it.

4.1 CBOOT selection and charging

To choose the proper CBOOT value the external MOS can be seen as an equivalent
capacitor. This capacitor CEXT is related to the MOS total gate charge:

Q gate
C EXT = --------------
-
V gate

The ratio between the capacitors CEXT and CBOOT is proportional to the cyclical voltage loss.
It has to be:
CBOOT>>>CEXT

e.g.: if Qgate is 30nC and Vgate is 10V, CEXT is 3nF. With CBOOT = 100nF the drop would be
300mV.
If HVG has to be supplied for a long time, the CBOOT selection has to take into account also
the leakage losses.
e.g.: HVG steady state consumption is lower than 200µA, so if HVG TON is 5ms, CBOOT has
to supply 1µC to CEXT. This charge on a 1µF capacitor means a voltage drop of 1V.
The internal bootstrap driver gives great advantages: the external fast recovery diode can
be avoided (it usually has great leakage current).
This structure can work only if VOUT is close to GND (or lower) and in the meanwhile the
LVG is on. The charging time (Tcharge ) of the CBOOT is the time in which both conditions are
fulfilled and it has to be long enough to charge the capacitor.
The bootstrap driver introduces a voltage drop due to the DMOS RDSON (typical value: 125
Ω). At low frequency this drop can be neglected. Anyway increasing the frequency it must be
taken in to account.
The following equation is useful to compute the drop on the bootstrap DMOS:

Q gate
V drop = I ch arg e R dson → V drop = ------------------- R dson
T ch arg e

where Qgate is the gate charge of the external power MOS, Rdson is the on resistance of the
bootstrap DMOS, and Tcharge is the charging time of the bootstrap capacitor.

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Bootstrap driver L6385E

For example: using a power MOS with a total gate charge of 30nC the drop on the bootstrap
DMOS is about 1V, if the Tcharge is 5µs. In fact:

30nC
V drop = --------------- ⋅ 125Ω ∼ 0.8V
5µs

Vdrop has to be taken into account when the voltage drop on CBOOT is calculated: if this drop
is too high, or the circuit topology doesn’t allow a sufficient charging time, an external diode
can be used.

Figure 4. Bootstrap driver

DBOOT

VS VBOOT VBOOT
VS
H.V. H.V.

HVG HVG
CBOOT CBOOT

VOUT VOUT
TO LOAD TO LOAD

LVG LVG

D99IN1056
a b

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L6385E Typical characteristic

5 Typical characteristic

Figure 5. Typical rise and fall times vs Figure 6. Quiescent current vs supply
load capacitance voltage
time D99IN1054
Iq D99IN1055
(nsec) (µA)
250 104

200
Tr 103
150
Tf
100
102

50

0 10
0 1 2 3 4 5 C (nF)
For both high and low side buffers @25˚C Tamb 0 2 4 6 8 10 12 14 16 VS(V)

Figure 7. Turn on time vs temperature Figure 8. Turn Off time vs temperature

250 250

@ Vcc = 15V @ Vcc = 15V

200 200

150 150
Ton (ns)

Toff (ns)

Typ. Typ.
100 100

50 50

0 0
-45 -25 0 25 50 75 100 125 -45 -25 0 25 50 75 100 125
Tj (°C) Tj (°C)

Figure 9. VBOOT UV turn On threshold Figure 10. Vcc UV turn Off threshold vs
vs temperature temperature

13 11
12 @ Vcc = 15V
10
11
Typ.
Vccth2(V)

10 9
Vbth1 (V)

9 Typ.

8
8

7
7
6
5 6
-45 -25 0 25 50 75 100 125 -45 -25 0 25 50 75 100 125
Tj (°C) Tj (°C)

9/16
Typical characteristic L6385E

Figure 11. VBOOT UV turn Off threshold Figure 12. Output source current vs
vs temperature temperature

1000
14
@ Vcc = 15V
13 @ Vcc = 15V 800
12

current (mA)
11 600
Vbth2 (V)

Typ.
10
400
9
8 200
Typ.
7
6 0
-45 -25 0 25 50 75 100 125 -45 -25 0 25 50 75 100 125
Tj (°C)

Figure 13. Vcc UV turn On threshold vs Figure 14. Output sink current vs
temperature temperature

13 1000

12 @ Vcc = 15V
800
current (mA)

11
Vccth1(V)

600
Typ.
10
Typ. 400
9
200
8

7 0
-45 -25 0 25 50 75 100 125 -45 -25 0 25 50 75 100 125
Tj (°C) Tj (°C)

10/16
L6385E Package mechanical data

6 Package mechanical data

In order to meet environmental requirements, ST offers these devices in ECOPACK®

packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com

11/16
Package mechanical data L6385E

Figure 15. DIP-8 mechanical data and package dimensions

mm inch
DIM. OUTLINE AND
MIN. TYP. MAX. MIN. TYP. MAX.
MECHANICAL DATA
A 3.32 0.131

a1 0.51 0.020

B 1.15 1.65 0.045 0.065

b 0.356 0.55 0.014 0.022

b1 0.204 0.304 0.008 0.012

D 10.92 0.430

E 7.95 9.75 0.313 0.384

e 2.54 0.100

e3 7.62 0.300

e4 7.62 0.300

F 6.6 0.260

I 5.08 0.200

L 3.18 3.81 0.125 0.150 DIP-8

Z 1.52 0.060

12/16
L6385E Package mechanical data

Figure 16. SO-8 mechanical data and package dimensions

mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX. OUTLINE AND
A 1.750 0.0689
MECHANICAL DATA
A1 0.100 0.250 0.0039 0.0098
A2 1.250 0.0492
b 0.280 0.480 0.0110 0.0189
c 0.170 0.230 0.0067 0.0091

D (1) 4.800 4.900 5.000 0.1890 0.1929 0.1969

E 5.800 6.000 6.200 0.2283 0.2362 0.2441

E1(2) 3.800 3.900 4.000 0.1496 0.1535 0.1575

e 1.270 0.0500
h 0.250 0.500 0.0098 0.0197
L 0.400 1.270 0.0157 0.0500
L1 1.040 0.0409
k 0˚ 8˚ 0˚ 8˚
ccc 0.100 0.0039
Notes: 1. Dimensions D does not include mold flash,
protrusions or gate burrs.
Mold flash, potrusions or gate burrs shall not
exceed 0.15mm in total (both side).
2. Dimension “E1” does not include interlead flash
SO-8
or protrusions. Interlead flash or protrusions shall
not exceed 0.25mm per side.

0016023 D

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Order codes L6385E

7 Order codes

Table 7. Order codes

Part number Package Packaging

L6385E DIP-8 Tube

L6385ED SO-8 Tube
L6385ED013TR SO-8 Tape and reel

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L6385E Revision history

8 Revision history

Table 8. Document revision history

Date Revision Changes

11-Oct-2007 1 First release

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 L6385E

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