MPSA20

Amplifier Transistor
NPN Silicon

Features
• Pb−Free Package is Available* http://onsemi.com

COLLECTOR
3
MAXIMUM RATINGS
Rating Symbol Value Unit
2
Collector −Emitter Voltage VCEO 40 Vdc BASE
Collector −Base Voltage VCBO 4.0 Vdc
Collector Current − Continuous IC 100 mAdc 1
EMITTER
Total Device Dissipation @ TA = 25°C PD 625 mW
Derate above 25°C 5.0 mW/°C

Total Device Dissipation @ TC = 25°C PD 1.5 W

Derate above 25°C 12 mW/°C
Operating and Storage Junction TJ, Tstg −55 to +150 °C
Temperature Range
TO−92
THERMAL CHARACTERISTICS CASE 29−11
1
2 STYLE 1
Characteristic Symbol Max Unit 3

Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W

(Note 1)

Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W

MARKING DIAGRAM

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected. MPS
1. RqJA is measured with the device soldered into a typical printed circuit board. A20
AYWW G
G

MPSA20 = Device Code

A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)

ORDERING INFORMATION
Device Package Shipping
MPSA20 TO−92 5,000 Units / Box
MPSA20G TO−92 5,000 Units / Box
(Pb−Free)

*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2006 1 Publication Order Number:

January, 2006 − Rev. 3 MPSA20/D
 MPSA20

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 2) V(BR)CEO 40 − Vdc
(IC = 1.0 mAdc, IB = 0)

Emitter −Base Breakdown Voltage V(BR)EBO 4.0 − Vdc

(IE = 100 mAdc, IC = 0)
Collector Cutoff Current ICBO − 100 nAdc
(VCB = 30 Vdc, IE = 0)

ON CHARACTERISTICS
DC Current Gain (Note 2) hFE 40 400 −
(IC = 5.0 mAdc, VCE = 10 Vdc)

Collector −Emitter Saturation Voltage VCE(sat) − 0.25 Vdc

(IC = 10 mAdc, IB = 1.0 mAdc)

SMALL− SIGNAL CHARACTERISTICS

Current −Gain − Bandwidth Product (Note 2) fT 125 − MHz
(IC = 5.0 mAdc, VCE = 10 Vdc, f = 100 MHz)

Output Capacitance Cobo − 4.0 pF

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.

EQUIVALENT SWITCHING TIME TEST CIRCUITS

+3.0 V +3.0 V
10 < t1 < 500 ms t1
300 ns 275 +10.9 V 275
+10.9 V DUTY CYCLE = 2%
DUTY CYCLE = 2%
10 k 10 k
−0.5 V 0
<1.0 ns CS < 4.0 pF* CS < 4.0 pF*
−9.1 V 1N916
< 1.0 ns

*Total shunt capacitance of test jig and connectors

Figure 1. Turn−On Time Figure 2. Turn−Off Time

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 MPSA20

NOISE FIGURE CONTOURS

(VCE = 5.0 Vdc, TA = 25°C)

20 100
IC = 1.0 mA BANDWIDTH = 1.0 Hz BANDWIDTH = 1.0 Hz
50
RS = 0 IC = 1.0 mA RS ≈ ∞
300 mA 20
en, NOISE VOLTAGE (nV)

In, NOISE CURRENT (pA)

300 mA
10
10 100 mA

7.0 5.0
100 mA
2.0
5.0
1.0
10 mA
30 mA 0.5 30 mA
3.0
0.2 10 mA

2.0 0.1
10 20 50 100 200 500 1k 2k 5k 10k 10 20 50 100 200 500 1k 2k 5k 10k
f, FREQUENCY (Hz) f, FREQUENCY (Hz)

Figure 3. Noise Voltage Figure 4. Noise Current

500k 1M
200k BANDWIDTH = 1.0 Hz 500k BANDWIDTH = 1.0 Hz
RS , SOURCE RESISTANCE (OHMS)

RS , SOURCE RESISTANCE (OHMS)

100k 200k
50k 100k
20k 50k
10k 20k
5k 10k
2.0 dB 1.0 dB
2k 5k
3.0 dB 4.0 dB
1k 2k 2.0 dB
6.0 dB 3.0 dB
500 10 dB
1k
500 5.0 dB
200
100 200 8.0 dB
50 100
10 20 30 50 70 100 200 300 500 700 1k 10 20 30 50 70 100 200 300 500 700 1k
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 5. Narrow Band, 100 Hz Figure 6. Narrow Band, 1.0 kHz

500k
10 Hz to 15.7 kHz
200k
RS , SOURCE RESISTANCE (OHMS)

100k
50k
Noise Figure is defined as:
20k
10k NF + 20 log10 ǒen2 ) 4KTR S ) In RS Ǔ
4KTRS
2 2 1ń2

5k 1.0 dB
en = Noise Voltage of the Transistor referred to the input. (Figure 3)
2k 2.0 dB In = Noise Current of the Transistor referred to the input. (Figure 4)
1k 3.0 dB K = Boltzman’s Constant (1.38 x 10−23 j/°K)
500 T = Temperature of the Source Resistance (°K)
5.0 dB
200 RS = Source Resistance (Ohms)
8.0 dB
100
50
10 20 30 50 70 100 200 300 500 700 1k
IC, COLLECTOR CURRENT (mA)

Figure 7. Wideband

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 MPSA20

TYPICAL STATIC CHARACTERISTICS

400
TJ = 125°C
h FE , DC CURRENT GAIN

200 25°C

−55 °C
100
80
MPSA20
60 VCE = 1.0 V
VCE = 10 V
40
0.004 0.006 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
IC, COLLECTOR CURRENT (mA)

Figure 8. DC Current Gain

VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)

1.0 100
MPSA20 TA = 25°C
IB = 500 mA
TJ = 25°C PULSE WIDTH = 300 ms
IC, COLLECTOR CURRENT (mA)
0.8 80 DUTY CYCLE ≤ 2.0% 400 mA

IC = 1.0 mA 10 mA 50 mA 100 mA 300 mA

0.6 60

200 mA
0.4 40

100 mA
0.2 20

0 0
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 0 5.0 10 15 20 25 30 35 40
IB, BASE CURRENT (mA) VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

Figure 9. Collector Saturation Region Figure 10. Collector Characteristics

1.4 1.6
*APPLIES for IC/IB ≤ hFE/2
θV, TEMPERATURE COEFFICIENTS (mV/°C)

TJ = 25°C
1.2
0.8
25°C to 125°C
V, VOLTAGE (VOLTS)

1.0
*qVC for VCE(sat)
0
0.8 VBE(sat) @ IC/IB = 10 − 55°C to 25°C

0.6 −0.8
VBE(on) @ VCE = 1.0 V
0.4 25°C to 125°C
−1.6
0.2 qVB for VBE − 55°C to 25°C
VCE(sat) @ IC/IB = 10
0 −2.4
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 11. “On” Voltages Figure 12. Temperature Coefficients

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 MPSA20

TYPICAL DYNAMIC CHARACTERISTICS

300 1000
200 VCC = 3.0 V
700
IC/IB = 10 500
TJ = 25°C ts
100 300
70 200
50
t, TIME (ns)

t, TIME (ns)
30 tr 100 tf
20 70
td @ VBE(off) = 0.5 Vdc 50
10 30 VCC = 3.0 V
7.0 IC/IB = 10
20 IB1 = IB2
5.0
TJ = 25°C
3.0 10
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 13. Turn−On Time Figure 14. Turn−Off Time

T CURRENT−GAIN BANDWIDTH PRODUCT (MHz)

500 10
TJ = 25°C TJ = 25°C
f = 100 MHz 7.0 f = 1.0 MHz
300
VCE = 20 V Cib
5.0
C, CAPACITANCE (pF)

200 5.0 V
Cob
3.0

100 2.0

70

50 1.0
f,

0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50
IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS)

Figure 15. Current−Gain − Bandwidth Product Figure 16. Capacitance

20 200
VCE = 10 Vdc VCE = 10 Vdc
hoe , OUTPUT ADMITTANCE (m mhos)

10 f = 1.0 kHz 100 f = 1.0 kHz

MPSA20
hie , INPUT IMPEDANCE (k Ω )

TA = 25°C TA = 25°C
7.0 hfe ≈ 200 @ IC = 1.0 mA 70
5.0 50 MPSA20
3.0 30 hfe ≈ 200 @ IC = 1.0 mA
2.0 20

1.0 10
0.7 7.0
0.5 5.0
0.3 3.0
0.2 2.0
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 17. Input Impedance Figure 18. Output Admittance

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 MPSA20

1.0
r(t) TRANSIENT THERMAL RESISTANCE 0.7
D = 0.5
0.5

0.3
0.2
0.2
(NORMALIZED)

0.1
0.1
FIGURE 20 DUTY CYCLE, D = t1/t2
0.07 0.05
D CURVES APPLY FOR POWER
0.05 P(pk)
PULSE TRAIN SHOWN
0.02
READ TIME AT t1 (SEE AN−569)
0.03 t1
0.01 ZqJA(t) = r(t) • RqJA
0.02 SINGLE PULSE TJ(pk) − TA = P(pk) ZqJA(t)
t2

0.01
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k 100k
t, TIME (ms)

Figure 19. Thermal Response

104 DESIGN NOTE: USE OF THERMAL RESPONSE DATA

VCC = 30 Vdc
103
A train of periodical power pulses can be represented by
IC, COLLECTOR CURRENT (nA)

the model as shown in Figure 20. Using the model and the
102 ICEO device thermal response the normalized effective transient
thermal resistance of Figure 19 was calculated for various
101
duty cycles.
To find ZqJA(t), multiply the value obtained from Figure
100 ICBO 19 by the steady state value RqJA.
AND Example:
ICEX @ VBE(off) = 3.0 Vdc Dissipating 2.0 watts peak under the following conditions:
10−1
t1 = 1.0 ms, t2 = 5.0 ms. (D = 0.2)
10−2
Using Figure 19 at a pulse width of 1.0 ms and D = 0.2, the
−4 −2 0 + 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160 reading of r(t) is 0.22.
0 0 TJ, JUNCTION TEMPERATURE (°C) The peak rise in junction temperature is therefore
DT = r(t) x P(pk) x RqJA = 0.22 x 2.0 x 200 = 88°C.
Figure 21.
For more information, see ON Semiconductor
Application Note AN569/D, available on our website at
www.onsemi.com.

400 The safe operating area curves indicate IC−VCE

100 ms
1.0 ms limits of the transistor that must be observed for reliable
200
IC, COLLECTOR CURRENT (mA)

10 ms operation. Collector load lines for specific circuits must

100 TC = 25°C 1.0 s fall below the limits indicated by the applicable curve.
dc The data of Figure 22 is based upon TJ(pk) = 150°C; TC
60 TA = 25°C or TA is variable depending upon conditions. Pulse curves
40 dc
are valid for duty cycles to 10% provided TJ(pk) ≤ 150°C.
20 TJ = 150°C
TJ(pk) may be calculated from the data in Figure 19. At
high case or ambient temperatures, thermal limitations
10 CURRENT LIMIT will reduce the power that can be handled to values less
THERMAL LIMIT than the limitations imposed by second breakdown.
6.0
SECOND BREAKDOWN LIMIT
4.0
2.0 4.0 6.0 8.0 10 20 40
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 22.

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 MPSA20

PACKAGE DIMENSIONS

TO−92 (TO−226)
CASE 29−11
ISSUE AL

NOTES:
A B 1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
P BEYOND DIMENSION K MINIMUM.
L INCHES MILLIMETERS
SEATING
PLANE K DIM MIN MAX MIN MAX
A 0.175 0.205 4.45 5.20
B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
D 0.016 0.021 0.407 0.533
D G 0.045 0.055 1.15 1.39
X X H 0.095 0.105 2.42 2.66
G J 0.015 0.020 0.39 0.50
H J K 0.500 −−− 12.70 −−−
L 0.250 −−− 6.35 −−−
V C N 0.080 0.105 2.04 2.66
P −−− 0.100 −−− 2.54
SECTION X−X R 0.115 −−− 2.93 −−−
1 N V 0.135 −−− 3.43 −−−
STYLE 1:
N PIN 1. EMITTER
2. BASE
3. COLLECTOR

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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
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