MJD5731

High Voltage PNP Silicon

Power Transistors
Designed for line operated audio output amplifier, SWITCHMODE
power supply drivers and other switching applications.

Features http://onsemi.com
• PNP Complements to the MJD47 thru MJD50 Series
• Epoxy Meets UL 94 V−0 @ 0.125 in SILICON
• These Devices are Pb−Free and are RoHS Compliant POWER TRANSISTORS
1.0 AMPERE
MAXIMUM RATINGS
Rating Symbol Max Unit
350 VOLTS, 15 WATTS
Collector−Emitter Voltage VCEO 350 Vdc
COLLECTOR
Emitter−Base Voltage VEB 5 Vdc 2, 4
Collector Current − Continuous IC 1.0 Adc
Collector Current − Peak ICM 3.0 Adc
1
Total Power Dissipation PD BASE
@ TC = 25°C 15 W
Derate above 25°C 0.12 W/°C
3
Total Power Dissipation (Note 1) PD EMITTER
@ TA = 25°C 1.56 W
Derate above 25°C 0.0125 W/°C
4
Unclamped Inductive Load Energy E 20 mJ
(See Figure 10)
Operating and Storage Junction TJ, Tstg −55 to +150 °C 1 2
Temperature Range 3

ESD − Human Body Model HBM 3B V DPAK

CASE 369C
ESD − Machine Model MM C V
STYLE 1
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the MARKING DIAGRAM
Recommended Operating Conditions may affect device reliability.
1. These ratings are applicable when surface mounted on the minimum pad
sizes recommended. AYWW
J
THERMAL CHARACTERISTICS 5731G
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case RqJC 8.33 °C/W
A = Assembly Location
Thermal Resistance, Junction−to−Ambient RqJA 80 °C/W Y = Year
(Note 2) WW = Work Week
Lead Temperature for Soldering TL 260 °C J5731 = Device Code
G = Pb−Free Package
2. These ratings are applicable when surface mounted on the minimum pad
sizes recommended.
ORDERING INFORMATION

Device Package Shipping†

MJD5731T4G DPAK 2500/Tape & Reel
(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.

© Semiconductor Components Industries, LLC, 2013 1 Publication Order Number:

August, 2013 − Rev. 5 MJD5731/D
 MJD5731

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic Symbol Min Max Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Sustaining Voltage (Note 3) VCEO(sus) Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 30 mAdc, IB = 0) 350 −

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current ICEO mAdc
(VCE = 250 Vdc, IB = 0) − 0.1

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current ICES mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(VCE = 350 Vdc, VBE = 0) − 0.01

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Cutoff Current
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
IEBO mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(VBE = 5.0 Vdc, IC = 0) − 0.5

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS (Note 3)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain hFE −
(IC = 0.3 Adc, VCE = 10 Vdc) 30 175

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 1.0 Adc, VCE = 10 Vdc) 10 −

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Saturation Voltage VCE(sat) Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 1.0 Adc, IB = 0.2 Adc) − 1.0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base−Emitter On Voltage VBE(on) Vdc
(IC = 1.0 Adc, VCE = 10 Vdc) − 1.5

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Current Gain − Bandwidth Product fT MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 0.2 Adc, VCE = 10 Vdc, f = 2.0 MHz) 10 −

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Small−Signal Current Gain hfe −
(IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 kHz) 25 −
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.

200
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

1.4
VCE = 10 V
100 TJ = 150°C 1.2
hFE , DC CURRENT GAIN

50 25°C 1
TJ = 25°C
30 -55°C 0.8
20
0.6
10 -55°C
0.4 150°C
5.0
0.2 VCE(sat)) @ IC/IB = 5.0
3.0
2.0 0
0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)

Figure 1. DC Current Gain Figure 2. Collector−Emitter Saturation Voltage

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 MJD5731

1.4 1.4

1.2 1.2

V, VOLTAGE (VOLTS)
1.0 TJ = - 55°C 1
VBE(sat) @ IC/IB = 5.0
V, VOLTAGE (V)

VBE(sat) @ IC/IB = 5 V
0.8 0.8
25°C VBE(on) @ VCE = 4 V
0.6 150°C 0.6

0.4 0.4 TJ = 25°C

0.2 0.2 VCE(sat) @ IC/IB = 5 V

0 0
0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 0.02 0.04 0.06 0.1 0.2 0.4 0.6 1 2
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)

Figure 3. Base−Emitter Voltage Figure 4. “On” Voltages

10 There are two limitations on the power handling ability of

5.0 a transistor: average junction temperature and second
IC, COLLECTOR CURRENT (AMP)

breakdown. Safe operating area curves indicate IC − VCE

2.0 1.0ms 100 ms
limits of the transistor that must be observed for reliable
1.0 500 ms operation; i.e., the transistor must not be subjected to greater
TC = 25°C dc
0.5 dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150°C; TC is
0.2
variable depending on conditions. Second breakdown pulse
0.1 BONDING WIRE LIMIT limits are valid for duty cycles to 10% provided TJ(pk)
0.05 THERMAL LIMIT ≤ 150°C. TJ(pk) may be calculated from the data in Figure 6.
SECOND BREAKDOWN LIMIT
At high case temperatures, thermal limitations will reduce
0.02
the power that can be handled to values less than the
0.01 limitations imposed by second breakdown.
5.0 10 20 30 50 100 200 300 500
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 5. Forward Bias Safe Operating Area

1
0.7 D = 0.5
0.5
RESISTANCE (NORMALIZED)
r(t), TRANSIENT THERMAL

0.3 0.2
0.2
0.1
P(pk)
0.05 RqJC(t) = r(t) RqJC
0.1 RqJC = 8.33°C/W MAX
0.07 0.02 D CURVES APPLY FOR POWER
0.05 PULSE TRAIN SHOWN t1
0.01
READ TIME AT t1 t2
0.03 SINGLE PULSE TJ(pk) - TC = P(pk) qJC(t)
0.02 DUTY CYCLE, D = t1/t2

0.01
0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100 200 300 500 1k
t, TIME (ms)

Figure 6. Thermal Response

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 MJD5731

TURN-ON PULSE
t1

VBE(off)
Vin 0V
VCC
RC
AP­ t1 ≤ 7.0 ns SCOPE
PROX. 100 ≤ t2 < 500 ms RB
-11 V t3 < 15 ns Vin
t2 t3
51 Cjd << Ceb

APPROX. +9.0 V +4.0 V

DUTY CYCLE ≈ 2.0%

TURN-OFF PULSE
Figure 7. Switching Time Equivalent Circuit

1.0 5.0
3.0 ts TJ = 25°C
TJ = 25°C
0.5 tr VCC = 200 V
VCC = 200 V 2.0 IC/IB = 5.0
0.3 IC/IB = 5.0
tf
0.2 td 1.0
t, TIME (s)

t, TIME (s)
μ

0.1 0.5

0.3
0.05
0.2
0.03
0.02 0.1

0.01 0.05
0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)

Figure 8. Turn−On Resistive Switching Times Figure 9. Resistive Turn−Off Switching Times

Test Circuit Voltage and Current Waveforms

tw ≈ 3 ms
VCE MONITOR (SEE NOTE 1)
0V
INPUT
RBB1 = TUT VOLTAGE
MJE171 150 W 100 mH -5 V
50 + 100 ms
INPUT VCC = 20 V 0.63 A
- IC MONITOR COLLECTOR
50 RBB2 = CURRENT 0 V
100 W
+ VBB2 = RS = VCER
VBB1 = 10 V 0 0.1 W COLLECTOR
-
VOLTAGE
10 V
VCE(sat)

Figure 10. Inductive Load Switching

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 MJD5731

PACKAGE DIMENSIONS

DPAK
CASE 369C
ISSUE D
NOTES:
C 1. DIMENSIONING AND TOLERANCING PER ASME
A Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
E A 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
MENSIONS b3, L3 and Z.
b3 B c2 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
4 5. DIMENSIONS D AND E ARE DETERMINED AT THE
L3 Z OUTERMOST EXTREMES OF THE PLASTIC BODY.
D 6. DATUMS A AND B ARE DETERMINED AT DATUM
DETAIL A H PLANE H.
1 2 3
INCHES MILLIMETERS
DIM MIN MAX MIN MAX
L4 A 0.086 0.094 2.18 2.38
b2 A1 0.000 0.005 0.00 0.13
b c b 0.025 0.035 0.63 0.89
b2 0.030 0.045 0.76 1.14
e 0.005 (0.13) M C H b3 0.180 0.215 4.57 5.46
c 0.018 0.024 0.46 0.61
GAUGE SEATING c2 0.018 0.024 0.46 0.61
L2 PLANE C PLANE D 0.235 0.245 5.97 6.22
E 0.250 0.265 6.35 6.73
e 0.090 BSC 2.29 BSC
H 0.370 0.410 9.40 10.41
L L 0.055 0.070 1.40 1.78
A1
L1 L1 0.108 REF 2.74 REF
L2 0.020 BSC 0.51 BSC
DETAIL A L3 0.035 0.050 0.89 1.27
ROTATED 905 CW L4 −−− 0.040 −−− 1.01
Z 0.155 −−− 3.93 −−−

STYLE 1:
PIN 1. BASE
2. COLLECTOR
SOLDERING FOOTPRINT* 3. EMITTER
4. COLLECTOR

6.20 3.0
0.244 0.118
2.58
0.101

5.80 1.6 6.172

0.228 0.063 0.243

SCALE 3:1 ǒinches

mm Ǔ

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

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