APM8005K

Dual N-Channel Enhancement Mode MOSFET

Features Pin Description

D1
•
D1
80V/4.7A, D2
D2
RDS(ON) =45mΩ (Typ.) @ VGS = 10V
RDS(ON) =55mΩ (Typ.) @ VGS = 5V S1
G1
• Reliable and Rugged S2
G2
• Lead Free and Green Devices Available
SOP-8
(RoHS Compliant)

Applications D1 D1 D2 D2

• LED Application System.

G1 G2

S1 S2

N-Channel MOSFET

Ordering and Marking Information

APM8005 Package Code
K : SOP-8
Assembly Material Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
Handling Code
Temperature Range TR : Tape & Reel
Package Code Assembly Material
G : Halogen and Lead Free Device
APM8005
APM8005 K : XXXXX XXXXX - Date Code

Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termina-
tion finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements
of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. ANPEC defines “Green” to
mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

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Rev. A.1 - Dec., 2009
APM8005K

Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)

Symbol Parameter Rating Unit

VDSS Drain-Source Voltage 80
V
VGSS Gate-Source Voltage ±25
ID* Continuous Drain Current 4.7
VGS=10V
IDM* Pulsed Drain Current 18
A
IS* Diode Continuous Forward Current 2.5
ISM** Pulse Source Current 18
TJ Maximum Junction Temperature 150
°C
TSTG Storage Temperature Range -55 to 150
TA=25°C 2
PD* Maximum Power Dissipation W
TA=100°C 0.8
RθJA* Thermal Resistance-Junction to Ambient 62.5 °C/W
EAS Drain-Source Avalanche Energy, L=0.1mH 16.3 mJ
Note：*Surface Mounted on 1in pad area, t ≤ 10sec.
2

Electrical Characteristics (TA = 25°C Unless Otherwise Noted)

APM8005K
Symbol Parameter Test Conditions Unit
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA 80 - - V
VDS=64V, VGS=0V - - 1
IDSS Zero Gate Voltage Drain Current µA
TJ=85°C - - 30
VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250µA 1 - 3 V
IGSS Gate Leakage Current VGS=±25V, VDS=0V - - ±100 nA
a VGS=10V, IDS=4.7A - 45 57
RDS(ON) Drain-Source On-state Resistance mΩ
VGS=5V, IDS=4.5A - 55 72
Diode Characteristics
a
VSD Diode Forward Voltage ISD=2.5A, VGS=0V - 0.75 1.1 V
trr Reverse Recovery Time - 36 - ns
ISD=2.5A, dISD/dt=100A/µs
Qrr Reverse Recovery Charge - 30 - nC

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Rev. A.1 - Dec., 2009
APM8005K

Electrical Characteristics (Cont.) (TA = 25°C Unless Otherwise Noted)

APM8005K
Symbol Parameter Test Conditions Unit
Min. Typ. Max.
b
Dynamic Characteristics
RG Gate Resistance VGS=0V,VDS=0V,F=1MHz - 2.5 - Ω
Ciss Input Capacitance VGS=0V, - 1100 -
Coss Output Capacitance VDS=30V, - 105 - pF
Crss Reverse Transfer Capacitance Frequency=1.0MHz - 60 -
td(ON) Turn-on Delay Time - 9 17
Tr Turn-on Rise Time VDD=40V, RL=40Ω, - 12
6
IDS=1A, VGEN=10V, ns
td(OFF) Turn-off Delay Time RG=6Ω - 38 69
Tf Turn-off Fall Time - 12 23
b
Gate Charge Characteristics
Qg Total Gate Charge - 23 32
VDS=40V, VGS=10V,
Qgs Gate-Source Charge - 4 - nC
IDS=4.7A
Qgd Gate-Drain Charge - 6 -
Note a : Pulse test ; pulse width ≤ 300 µs, duty cycle ≤ 2%.
Note b : Guaranteed by design, not subject to production testing.

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Rev. A.1 - Dec., 2009
APM8005K

Typical Operating Characteristics

Power Dissipation Drain Current

2.5 6

5
2.0

ID - Drain Current (A)

4
Ptot - Power (W)

1.5

1.0
2

0.5
1

o
TA=25 C,VG=10V
0.0 0
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160

Tj - Junction Temperature (°C) Tj - Junction Temperature (°C)

Safe Operation Area Thermal Transient Impedance

50 2
Normalized Transient Thermal Resistance

1 Duty = 0.5

10 0.2
it
Lim
ID - Drain Current (A)

n)

0.1
s(o
Rd

300µs 0.1 0.05

1
1ms 0.02

0.01
10ms
Single Pulse
0.01
0.1 100ms

1s
DC 2
o
Mounted on 1in pad
TA=25 C o
RθJA :62.5 C/W
0.01 1E-3
0.01 0.1 1 10 100 500 1E-4 1E-3 0.01 0.1 1 10 30

VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec)

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Rev. A.1 - Dec., 2009
APM8005K

Typical Operating Characteristics (Cont.)

Output Characteristics Drain-Source On Resistance

18 75
VGS=4,5,6,7,8,9,10V
16 70

RDS(ON) - On - Resistance (mΩ)

14 65
ID - Drain Current (A)

12 60
VGS=5V
10 55

8 3.5V 50
VGS=10V
6 45

4 40

2 3V 35

0 30
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 2 4 6 8 10

VDS - Drain-Source Voltage (V) ID - Drain Current (A)

Gate-Source On Resistance Gate Threshold Voltage

100 1.8
IDS=4.7A IDS =250µA
1.6
90
RDS(ON) - On Resistance (mΩ)

Normalized Threshold Voltage

1.4
80
1.2

70 1.0

0.8
60

0.6
50
0.4
40
0.2

30 0.0
2 3 4 5 6 7 8 9 10 -50 -25 0 25 50 75 100 125 150

VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C)

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Rev. A.1 - Dec., 2009
APM8005K

Typical Operating Characteristics (Cont.)

Drain-Source On Resistance Source-Drain Diode Forward

2.0 20
VGS = 10V
1.8 IDS = 4.7A 10
Normalized On Resistance

IS - Source Current (A)

1.6
o
Tj=150 C
1.4

1.2
o
Tj=25 C
1.0 1

0.8

0.6

0.4
o
RON@Tj=25 C: 45mΩ
0.2 0.1
-50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V)

Capacitance Gate Charge

1400 10
Frequency=1MHz VDS=40V
9 IDS= 4.7A
1200
VGS - Gate - source Voltage (V)

Ciss 8
C - Capacitance (pF)

1000 7

6
800
5
600
4

400 3

2
200 Coss 1
Crss
0 0
0 5 10 15 20 25 30 35 40 0 5 10 15 20 25

VDS - Drain - Source Voltage (V) QG - Gate Charge (nC)

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Rev. A.1 - Dec., 2009
APM8005K

Avalanche Test Circuit and Waveforms

VDS
L VDSX(SUS)
tp
DUT VDS
IAS
RG
VDD
VDD
tp IL EAS
0.01Ω

tAV

Switching Time Test Circuit and Waveforms

VDS
RD
VDS
DUT 90%

VGS
RG
VDD

10%
tp VGS
td(on) tr td(off) tf

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Rev. A.1 - Dec., 2009
APM8005K

Package Information
SOP-8
D

SEE VIEW A

E1

°
h X 45

e b c
A2

0.25
A

GAUGE PLANE
SEATING PLANE
A1

L
VIEW A

S SOP-8
Y
M MILLIMETERS INCHES
B
O
L MIN. MAX. MIN. MAX.
A 1.75 0.069

A1 0.10 0.25 0.004 0.010

A2 1.25 0.049

b 0.31 0.51 0.012 0.020

c 0.17 0.25 0.007 0.010

D 4.80 5.00 0.189 0.197

E 5.80 6.20 0.228 0.244

E1 3.80 4.00 0.150 0.157
e 1.27 BSC 0.050 BSC
h 0.25 0.50 0.010 0.020

L 0.40 1.27 0.016 0.050

0 0° 8° 0° 8°

Note: 1. Follow JEDEC MS-012 AA.

2. Dimension “D” does not include mold flash, protrusions or gate burrs.
Mold flash, protrusion or gate burrs shall not exceed 6 mil per side.
3. Dimension “E” does not include inter-lead flash or protrusions.
Inter-lead flash and protrusions shall not exceed 10 mil per side.

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Rev. A.1 - Dec., 2009
APM8005K

Carrier Tape & Reel Dimensions

OD0 P0 P2 P1 A

E1
F

W
B0

K0 A0 OD1 B A
B

SECTION A-A

T
SECTION B-B

d
H
A

T1

Application A H T1 C d D W E1 F
330.0± 12.4+2.00 13.0+0.50
50 MIN. 1.5 MIN. 20.2 MIN. 12.0±0.30 1.75±0.10 5.5±0.05
2.00 -0.00 -0.20
SOP-8 P0 P1 P2 D0 D1 T A0 B0 K0
1.5+0.10 0.6+0.00
4.0±0.10 8.0±0.10 2.0±0.05 1.5 MIN. 6.40±0.20 5.20±0.20 2.10±0.20
-0.00 -0.40
(mm)

Devices Per Unit

Package Type Unit Quantity

SOP-8 Tape & Reel 2500

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Rev. A.1 - Dec., 2009
APM8005K

Taping Direction Information

SOP-8

USER DIRECTION OF FEED

Classification Profile

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Rev. A.1 - Dec., 2009
APM8005K

Classification Reflow Profiles

Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly
Preheat & Soak
100 °C 150 °C
Temperature min (Tsmin)
150 °C 200 °C
Temperature max (Tsmax)
60-120 seconds 60-120 seconds
Time (Tsmin to Tsmax) (ts)

Average ramp-up rate

3 °C/second max. 3°C/second max.
(Tsmax to TP)
Liquidous temperature (TL) 183 °C 217 °C
Time at liquidous (tL) 60-150 seconds 60-150 seconds
Peak package body Temperature
See Classification Temp in table 1 See Classification Temp in table 2
(Tp)*
Time (tP)** within 5°C of the specified
20** seconds 30** seconds
classification temperature (Tc)
Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max.

Time 25°C to peak temperature 6 minutes max. 8 minutes max.

* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.

Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)

3 3
Package Volume mm Volume mm
Thickness <350 ≥350
<2.5 mm 235 °C 220 °C
≥2.5 mm 220 °C 220 °C
Table 2. Pb-free Process – Classification Temperatures (Tc)
3 3 3
Package Volume mm Volume mm Volume mm
Thickness <350 350-2000 >2000
<1.6 mm 260 °C 260 °C 260 °C
1.6 mm – 2.5 mm 260 °C 250 °C 245 °C
≥2.5 mm 250 °C 245 °C 245 °C

Reliability Test Program

Test item Method Description
SOLDERABILITY JESD-22, B102 5 Sec, 245°C
HOLT JESD-22, A108 1000 Hrs, Bias @ 125°C
PCT JESD-22, A102 168 Hrs, 100%RH, 2atm, 121°C
TCT JESD-22, A104 500 Cycles, -65°C~150°C

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Rev. A.1 - Dec., 2009
APM8005K

Customer Service

Anpec Electronics Corp.

Head Office :
No.6, Dusing 1st Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
2F, No. 11, Lane 218, Sec 2 Jhongsing Rd.,
Sindain City, Taipei County 23146, Taiwan
Tel : 886-2-2910-3838
Fax : 886-2-2917-3838

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Rev. A.1 - Dec., 2009