SM4377NSKP ®

N-Channel Enhancement Mode MOSFET

Features Pin Description

• 30V/50A, D D
D D
RDS(ON)= 7mΩ (max.) @ VGS=10V
RDS(ON)= 9.6mΩ (max.) @ VGS=4.5V
• Provide Excellent Qgd x Rds-on S
G
Pin 1
S S
• 100% UIS + Rg Tested DFN5x6A-8_EP
• Reliable and Rugged (5,6,7,8)
• Lead Free and Green Devices Available DD DD

(RoHS Compliant)

Applications (4) G

• Power Management in Desktop Computer or

DC/DC Converters.
S S S
( 1, 2, 3 )
N-Channel MOSFET

Ordering and Marking Information

SM4377NS Package Code
KP : DFN5x6A-8_EP
Assembly Material Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
Handling Code
Temperature Range TR : Tape & Reel
Package Code Assembly Material
G : Halogen and Lead Free Device

SM4377NS KP : SM4377 XXXXX - Lot Code

XXXXX

Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).

SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.

Copyright  Sinopower Semiconductor, Inc. 1 www.sinopowersemi.com

Rev. A.9 - August, 2015
SM4377NSKP ®

Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)

Symbol Parameter Rating Unit

Common Ratings
VDSS Drain-Source Voltage 30
V
VGSS Gate-Source Voltage ±20
TJ Maximum Junction Temperature 150 °C
TSTG Storage Temperature Range -55 to 150 °C
IS Diode Continuous Forward Current 30 A
TC=25°C 120
IDP Pulse Drain Current Tested A
TC=100°C 85

a
TC=25°C 50*
ID Continuous Drain Current A
TC=100°C 35
TC=25°C 32
PD Maximum Power Dissipation W
TC=100°C 12.8
RθJC Thermal Resistance-Junction to Case Steady State 3.9 °C/W
TA=25°C 12.8
ID b Continuous Drain Current A
TA=70°C 10.2
TA=25°C 1.73
PD b Maximum Power Dissipation W
TA=70°C 1.11
t ≤ 10s 28
RθJA b Thermal Resistance-Junction to Ambient °C/W
Steady State 72
L=0.1mH 25
c
IAS Avalanche Current, Single pulse L=0.3mH 19 A
L=0.5mH 14
L=0.1mH 31
c
EAS Avalanche Energy, Single pulse L=0.3mH 54 mJ
L=0.5mH 50
Note a：* Current limited by bond wire.
2
Note b：Surface Mounted on 1in pad area, t =999sec.
Note c：UIS tested and pulse width limited by maximum junction temperature 150o C (initial temperature Tj=25o C).

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Rev. A.9 - August, 2015
SM4377NSKP ®

Electrical Characteristics (TA = 25°C unless otherwise noted)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

Static Characteristics
BV DSS Drain-Source Breakdown Voltage V GS=0V, IDS=250µA 30 - - V
Drain-Source Breakdown Voltage V GS=0V, ID(aval) =10A
BVDSSt 34 - - V
(transient) T case =25°C, t transient=100ns
V DS=24V, VGS=0V - - 1
IDSS Zero Gate Voltage Drain Current µA
TJ=85°C - - 30
VGS(th) Gate Threshold Voltage V DS=V GS, IDS=250µA 1.5 1.8 2.5 V
IGSS Gate Leakage Current V GS=±20V, VDS=0V - - ±100 nA
V GS=10V, IDS=30A - 5.6 7
d
RDS(ON) Drain-Source On-state Resistance TJ=125°C - 8.4 - mΩ
V GS=4.5V, IDS=15A - 7.4 9.6
Gfs Forward Transconductance V DS=5V, IDS=30A - 70 - S
Diode Characteristics
VSD d Diode Forward Voltage I SD=15A, V GS=0V - 0.85 1.1 V
trr Reverse Recovery Time - 20 -
ta Charge Time - 11 - ns
I DS=15A, dl SD /dt=100A/µs
tb Discharge Time - 9 -
Qrr Reverse Recovery Charge - 10 - nC
e
Dynamic Characteristics
RG Gate Resistance V GS=0V,VDS=0V,F=1MHz 0.7 1 1.5 Ω
C iss Input Capacitance 980 1180 1400
V GS=0V,
Coss Output Capacitance V DS=15V, 158 190 228 pF
Frequency=1.0MHz
Crss Reverse Transfer Capacitance 90 115 140
td(ON ) Turn-on Delay Time - 11 20
tr Turn-on Rise Time V DD =15V, RL=15Ω, - 12 22
I DS=1A, VGEN=10V, ns
t d(OFF) Turn-off Delay Time R G=6Ω - 36 60
tf Turn-off Fall Time - 10 19
e
Gate Charge Characteristics
V DS=15V, VGS=4.5V,
Qg Total Gate Charge - 10 12
I DS=30A
Qg Total Gate Charge - 20 24
Qgth Threshold Gate Charge - 2.2 2.7 nC
V DS=15V, VGS=10V,
Qgs Gate-Source Charge I DS=30A - 3.5 4.1
Q gd Gate-Drain Charge - 4.2 4.7
Note d：Pulse test ; pulse width≤300µs, duty cycle≤2%.
Note e：Guaranteed by design, not subject to production testing.

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Rev. A.9 - August, 2015
SM4377NSKP ®

Typical Operating Characteristics

Power Dissipation Drain Current

35 60

30
50

25
Ptot - Power (W)

ID - Drain Current (A)

40

20
30
15

20
10

10
5
o o
TC=25 C TC=25 C,VG=10V
0 0
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160

Tj - Junction Temperature (°C) Tj - Junction Temperature (°C)

Safe Operation Area Thermal Transient Impedance

400 2
Normalized Transient Thermal Resistance

1 Duty = 0.5

100 0.2
it
im
ID - Drain Current (A)

0.1
L
n)

1ms
s(o

0.05
Rd

10ms 0.1
10 0.02
100ms
0.01

0.01 Single Pulse

1
1s

2
DC Mounted on 1in pad
O o
TC=25 C RθJA :72 C/W
0.1 1E-3
0.01 0.1 1 10 100 1E-4 1E-3 0.01 0.1 1 10 100 1000

VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec)

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Rev. A.9 - August, 2015
SM4377NSKP ®

Typical Operating Characteristics (Cont.)

Output Characteristics Drain-Source On Resistance

120 14

VGS= 4.5,5,6,7,8,9,10V
100 12

RDS(ON) - On - Resistance (mΩ)

4V

80 10
ID - Drain Current (A)

VGS=4.5V

60 3.5V 8

VGS=10V
40 6

3V
20 4

2.5V
0 2
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 20 40 60 80 100 120

VDS - Drain - Source Voltage (V) ID - Drain Current (A)

Gate-Source On Resistance Gate Threshold Voltage

30 1.6
IDS=30A IDS =250µA
1.4
25
RDS(ON) - On - Resistance (mΩ)

Normalized Threshold Vlotage

1.2
20

1.0
15
0.8

10
0.6

5
0.4

0 0.2
2 3 4 5 6 7 8 9 10 -50 -25 0 25 50 75 100 125 150

VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C)

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Rev. A.9 - August, 2015
SM4377NSKP ®

Typical Operating Characteristics (Cont.)

Drain-Source On Resistance Source-Drain Diode Forward

2.0
VGS = 10V 100
1.8 IDS = 30A
Normalized On Resistance

1.6
o

IS - Source Current (A)

1.4 Tj=150 C
10

1.2 o
Tj=25 C
1.0

0.8 1

0.6

0.4
o
RON@Tj=25 C: 5.6mΩ
0.2 0.1
-50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V)

Capacitance Gate Charge

1600 10
Frequency=1MHz
VDS= 15V
1400 9
IDS= 30A
VGS - Gate-source Voltage (V)

8
1200 Ciss
7
C - Capacitance (pF)

1000
6

800 5

600 4

3
400
2
Coss
200 Crss
1

0 0
0 5 10 15 20 25 30 0 4 8 12 16 20
VDS - Drain - Source Voltage (V) QG - Gate Charge (nC)

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Rev. A.9 - August, 2015
SM4377NSKP ®

Typical Operating Characteristics (Cont.)

Transfer Characteristics

100

90

80

70
ID - Drain Current (A)

60

50

40

30 Tj=125 C
o

20 o
Tj =-55 C
o
Tj=25 C
10

0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

VGS - Gate-Source Voltage (V)

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Rev. A.9 - August, 2015
SM4377NSKP ®

Avalanche Test Circuit and Waveforms

VDS
L VDSX(SUS)
tp
DUT VDS
IAS
RG
VDD

VDD
tp IL EAS
0.01Ω

tAV

Switching Time Test Circuit and Waveforms

VDS
RD
VDS
DUT 90%

VGS
RG
VDD

10%
tp VGS
td(on) tr td(off) tf

Copyright  Sinopower Semiconductor, Inc. 8 www.sinopowersemi.com

Rev. A.9 - August, 2015
SM4377NSKP ®

Disclaimer

Sinopower Semiconductor, Inc. (hereinafter “Sinopower”) has been making

great efforts to development high quality and better performance products to
satisfy all customers’ needs. However, a product may fail to meet customer’s
expectation or malfunction for various situations.

All information which is shown in the datasheet is based on Sinopower’s

research and development result, therefore, Sinopower shall reserve the right
to adjust the content and monitor the production.

In order to unify the quality and performance, Sinopower has been following
JEDEC while defines assembly rule. Notwithstanding all the suppliers
basically follow the rule for each product, different processes may cause
slightly different results.

The technical information specified herein is intended only to show the typical
functions of and examples of application circuits for the products. Sinopower
does not grant customers explicitly or implicitly, any license to use or exercise
intellectual property or other rights held by Sinopower and other parties.
Sinopower shall bear no responsible whatsoever for any dispute arising from
the use of such technical information.

The products are not designed or manufactured to be used with any

equipment, device or system which requires an extremely high level of
reliability, such as the failure or malfunction of which any may result in a direct
threat to human life or a risk of human injury. Sinopower shall bear no
responsibility in any way for use of any of the products for the above special
purposes. If a product is intended to use for any such special purpose, such
as vehicle, military, or medical controller relevant applications, please contact
Sinopower sales representative before purchasing.

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Rev. A.9 - August, 2015
SM4377NSKP ®

Package Information

F F1
D1

E1
E
K

G1
G
D
A
C

e B

S DFN5x6A-8_EP1_P RECOMMENDED LAND PATTERN

Y
M MILLIMETERS INCHES
B
O 4.6
L MIN. MAX. MIN. MAX.
A 0.90 1.20 0.035 0.047
0.77
B 0.3 0.51 0.012 0.020
C 0.19 0.25 0.007 0.010
D 4.80 5.30 0.189 0.209
0.61

D1 4.00 4.40 0.157 0.173

E 5.90 6.20 0.232 0.244 3.6
E1 5.50 5.80 0.217 0.228 6.1
1.18 1.16

e 1.27 BSC 0.050 BSC

F 0.05 0.30 0.002 0.012
F1 0.35 0.75 0.014 0.030
G 0.05 0.30 0.002 0.012
0.5 1.27
0.71

G1 0.35 0.75 0.014 0.030

H 3.34 3.9 0.131 0.154
K 0.762 - 0.03 -
UNIT: mm
Note : 1.Dimension D, D1,D2 and E1 do not include mold flash or protrusions.
Mold flash or protrusions shall not exceed 10 mil.

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Rev. A.9 - August, 2015
SM4377NSKP ®

Carrier Tape & Reel Dimensions

OD0 P0 P2 P1 A

E1
F

W
B0

K0 A0 A
OD1 B
B

SECTION A-A

T
SECTION B-B

d
H
A

T1

Application A H T1 C d D W E1 F

330.0±2.00 50 MIN. 12.4+2.00 13.0+0.50 1.5 MIN. 20.2 MIN. 12.0±0.30 1.75±0.10 5.5±0.10
-0.00 -0.20
DFN5x6A-
P0 P1 P2 D0 D1 T A0 B0 K0
8_EP1_P
4.0±0.10 8.0±0.10 2.0±0.10 1.5+0.10 1.5 MIN. 0.3±0.05 6.5±0.10 5.3±0.10 1.4±0.10
-0.00
(mm)

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Rev. A.9 - August, 2015
SM4377NSKP ®

Taping Direction Information

DFN5x6A-8_EP1-P

USER DIRECTION OF FEED

Classification Profile

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Rev. A.9 - August, 2015
SM4377NSKP ®

Classification Reflow Profiles

Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly
Preheat & Soak
100 °C 150 °C
Temperature min (Tsmin)
150 °C 200 °C
Temperature max (Tsmax)
60-120 seconds 60-120 seconds
Time (Tsmin to Tsmax) (ts)

Average ramp-up rate

3 °C/second max. 3°C/second max.
(Tsmax to TP)
Liquidous temperature (TL) 183 °C 217 °C
Time at liquidous (tL) 60-150 seconds 60-150 seconds
Peak package body Temperature
See Classification Temp in table 1 See Classification Temp in table 2
(Tp)*
Time (tP)** within 5°C of the specified
20** seconds 30** seconds
classification temperature (Tc)
Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max.

Time 25°C to peak temperature 6 minutes max. 8 minutes max.

* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.
Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)
Package Volume mm 3 Volume mm 3
Thickness <350 ≥350
<2.5 mm 235 °C 220 °C
≥2.5 mm 220 °C 220 °C

Table 2. Pb-free Process – Classification Temperatures (Tc)

3 3 3
Package Volume mm Volume mm Volume mm
Thickness <350 350-2000 >2000
<1.6 mm 260 °C 260 °C 260 °C
1.6 mm – 2.5 mm 260 °C 250 °C 245 °C
≥2.5 mm 250 °C 245 °C 245 °C

Reliability Test Program

Test item Method Description
SOLDERABILITY JESD-22, B102 5 Sec, 245°C
HTRB JESD-22, A108 1000 Hrs, 80% of VDS max @ Tjmax
HTGB JESD-22, A108 1000 Hrs, 100% of VGS max @ Tjmax
PCT JESD-22, A102 168 Hrs, 100%RH, 2atm, 121°C
TCT JESD-22, A104 500 Cycles, -65°C~150°C

Customer Service
Sinopower Semiconductor, Inc.
5F, No. 6, Dusing 1St Rd., Hsinchu Science Park,
Hsinchu, 30078, Taiwan
TEL: 886-3-5635818 Fax: 886-3-5635080

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Rev. A.9 - August, 2015