191EE38 EDC Lab Manual

P.S.R.
ENGINEERING COLLEGE
(An Autonomous Institution & Affiliated to Anna University, Chennai)
SIVAKASI – 626140
LABORATORY MANUAL
191EE38
ELECTRONIC DEVICES AND

CIRCUITS
LABORATORY
B.E. Electrical and Electronics Engineering
REGULATIONS - 2019
Prepared by, Approved by,

Dr.R.Aruna, AP/EEE
HoD/EEE
DEPARTMENT OF ELECTRICAL AND ELECTRONICS ENGINEERING

P.S.R. ENGINEERING COLLEGE
SIVAKASI - 626140
191EE38 ELECTRONIC DEVICES AND CIRCUITS LABORATORY L-T-P C
0-0-2 1
Programme: B.E- Electrical and Electronics Engineering Sem: III Category: PC
To study the characteristics and to determine the device parameters of various solid-
AIM:
state devices.
Pre-requisites: Electronic Devices and Circuits, Electric Circuit Analysis
Course Outcomes:
The Students will be able to
CO1: Construct the VI characteristics of various configurations of BJT.
CO2: Illustrate the VI characteristics of UJT and analyze its relation.
CO3: Describe the VI characteristics of Opto-coupler.
CO4: Design the rectifier circuit using PN.
CO5: Develop the Oscillator Circuits.
CO6: Design the amplifier circuits.
LIST OF EXPERIMENTS
1. Characteristics of P-N Junction diode.
2. Characteristics of Zener diode.
3. Characteristics of JFET/MOSFET.
4. Input and Output Characteristics of Transistor in CE configuration.
5. Input and Output Characteristics of Transistor in CBconfiguration
6. Single phase half wave and full wave rectifiers.
7. Characteristics of UJT
8. Common Emitter amplifier.
9. RC phase Shift Oscillator Circuits.
10. Characteristics of Opto-coupler.
11. PCB Designing.
Total Periods: 45
Program Specific
Course Program Outcomes (POs)
Outcomes (PSOs)
Outcomes
PO1 PO2 PO3 PO4 PO5 PO6 PO7 PO8 PO9 PO10 PO11 PO12 PSO1 PSO2 PSO3 PSO4
CO1 3 2 2 2 1 2 1 2 1 3 1 2
CO2 3 2 2 2 1 2 1 2 1 3 1 2
CO3 3 2 2 2 1 2 1 2 1 3 2
CO4 3 2 3 2 1 3 1 2 2 3 1 2
CO5 3 2 3 2 1 2 1 2 1 3 3
CO6 3 2 3 2 1 3 1 2 1 3 3
1: Slight (Low) 2: Moderate (Medium) 3: Substantial (High)
P.S.R.Engineering College, Sivakasi 191EE38 - Electronic Devices and Circuits Laboratory
CONTENTS
S.No Name of the Experiments Page
Characteristics of PN Junction Diode 3

1.
Characteristics of Zener Diode 7

2.
Characteristics of Field Effect Transistor 10

3.
Input and Output Characteristics of Transistor in CE Configuration 15

4.
Input and Output Characteristics of Transistor in CB Configuration 19

5.
Single Phase Half Wave and Full Wave Rectifiers 23

6.
Characteristics of Uni Junction Transistor 27

7.
Common Emitter amplifier 30

8.
RC phase shift oscillator 33

9.
Characteristics of Photodiode 36
10.
Designing of PCB 39
11.
Page | 1
Prepared by: Dr.R.Aruna
Resistor values - the resistor colour code

Resistance is measured in ohms; the symbol for ohm is an omega .
The Resistor
1 is quite small so resistor values are Colour
often given
Codein k and M .
1k = 1000 1M = 1000000 .
Colour Number
Resistor values are normally shown using colored bands.
Each colour represents a number as shown in the table. Black 0
. Brown 1
Red 2
Most resistors have 4 bands: Orange 3
 The first band gives the first digit. Yellow 4

 The second band gives the second digit.
 The third band indicates the number of zeros. Green 5
 The fourth band is used to shows the tolerance (precision) of the
resistor Blue 6
This resistor has red (2), violet (7), yellow (4 zeros) and gold Violet 7
bands.
So its value is 270000 = 270 k . Grey 8
On circuit diagrams the is usually omitted and the value is
written 270K. White 9
Small value resistors (less than 10 ohm)

The standard colour code cannot show values of less than 10 . To show these small values
two special colours are used for the third band: gold which means × 0.1 and silver which
means × 0.01. The first and second bands represent the digits as normal.
For example:
red, violet, gold bands represent 27 × 0.1 = 2.7
blue, green, silver bands represent 56 × 0.01 = 0.56
Tolerance of resistors (fourth band of colour code)

The tolerance of a resistor is shown by the fourth band of the colour code. Tolerance is the
precision of the resistor and it is given as a percentage. For example a 390 resistor with a
tolerance of ±10% will have a value within 10% of 390 , between 390 - 39 = 351 and 390 + 39
= 429 (39 is 10% of 390). A special colour code is used for the fourth band tolerance: silver
±10%, gold ±5%, red ±2%, brown ±1%.
If no fourth band is shown the tolerance is ±20%.
Page | 2
Ex.No: 1. CHARACTERISTICS OF PN JUNCTION DIODE
AIM:
To study the V-I characteristics of a P-N diode in both forward bias and reverse bias
and to find the static and dynamic resistance of P-N diode.
APPARATUS REQUIRED:
QUANTITY
S.NO. NAME OF THE EQUIPMENT TYPE RANGE
(NO.S)
1 Diode IN 4001 1
2 Resistor 1 kΩ 1
3 Voltmeter MC (0 – 2V) 1
(0 – 30V) 1
4 Ammeter MC (0 – 50mA) 1
MC (0 - 500μA) 1
5 Regulated Power Supply (0 – 30V) 1
6 Bread Board 1
7 Connecting wires Required
FORMULA USED:
 DC (or) Static Resistance, RD = VD / ID Ω
 AC (or) Dynamic Resistance, rd = ΔVD / Δ ID Ω
THEORY:
A p-n junction diode conducts only in one direction. The V-I characteristics of the diode are
curve between voltage across the diode and current through the diode. When external voltage
is zero, circuit is open and the potential barrier does not allow the current to flow. Therefore,
the circuit current is zero. When P-type (Anode is connected to +ve terminal and n - type
(cathode) is connected to –ve terminal of the supply voltage, is known as forward bias.
Page | 3
CIRCUIT DIAGRAM:
Forward Bias Condition Reverse Bias Condition
Diode (0 – 50mA) MC Diode (0 – 500μA) MC
A K + +A - K + A + -
A
(0-30)V + + - 1kΩ RPS + - 1k Ω
V V
(0-30)V
(0 – 30V) MC (0 – 2V)MC
TABULATION:
Reverse Bias
Forward Bias
Sl.No Vf (volts) If (mA) Sl.No Vr (volts) Ir (µA)
1. 1.
2. 2.
3. 3.
4. 4.
5. 5.
6. 6.
7. 7.
Page | 4
MODEL GRAPH:
V-I characteristics of PN junction diode
Page | 5
The potential barrier is reduced when diode is in the forward biased condition. At some
forward voltage, the potential barrier altogether eliminated and current starts flowing
through the diode and also in the circuit. The diode is said to be in ON state. The current
increases with increasing forward voltage. When N-type (cathode) is connected to +ve
terminal and P-type (Anode) is connected –ve terminal of the supply voltage is known as
reverse bias and the potential barrier across the junction increases. Therefore, the junction
resistance becomes very high and a very small current (reverse saturation current) flows in
the circuit. The diode is said to be in OFF state. The reverse bias current due to minority
charge carriers.
PROCEDURE:
1. Identify the anode and cathode terminals of an IN4001 diode (or equivalent silicon
diode such as BY126) and test it using a multimeter. Set up the circuit on breadboard
as shown in figure.
2. Wire the circuit as shown in figure of forward bias condition. By varying the input
voltage, the ammeter and voltmeter readings are noted down.
3. Wire the circuit as shown in figure of reverse bias condition. By varying the input
voltage, the ammeter and voltmeter readings are noted down for.
4. Plot the graph between voltage and current for both forward and reverse bias
conditions.
RESULT:
Thus the forward and reverse bias V-I characteristics of a PN diode were studied and
the static and dynamic resistance of P-N diode are calculated.
Page | 6
Ex.No: 2. CHARACTERISTICS OF ZENER DIODE
AIM:
To obtain the forward and reverse V-I characteristics of a Zener diode and to plot the
characteristics.
APPARATUS REQUIRED:
QUANTITY
(NO.S)
1 Zener Diode IZ9.2 V 1
2 Resistor 1 kΩ 1
MC (0 – 10V) 1
6 Bread Board 1
THORY:
A zener diode is heavily doped p-n junction diode, specially made to operate in the
break down region. A p-n junction diode normally does not conduct when reverse biased. But
if the reverse bias is increased, at a particular voltage it starts conducting heavily. This voltage
is called Break down Voltage. High current through the diode can permanently damage the
device to avoid high current,
In Zener diode the reverse breakdown occurs at low voltages, so the flow of heavy
current can be avoided. Once the diode starts conducting it maintains almost constant voltage
across the terminals whatever may be the current through it, i.e., it has very low dynamic
resistance. It is used in voltage regulators.
Page | 7
CIRCUIT DIAGRAM:
IZ9.2 (0 – 50mA)MC IZ9.2 (0 – 50mA)MC
A K + + - K + A + -
A A
RPS + -
RPS + - V
V
- (0 – 30V) (0 – 2V) MC 1 kΩ (0 – 30V) (0 – 10V) MC 1 kΩ
MODEL GRAPH: If (mA)
Forward Bias Condition
Vr (Volts)
Vf (Volts)
Reverse Bias Condition Ir (mA)
TABULATION:
FORWARD BIAS REVERSE BIAS
Sl.No Sl.No Vr (volts) Ir(mA)

Vf (volts) If (mA)
1. 1.
2. 2.
3. 3.
4. 4.
5. 5.
Page | 8
PROCEDURE:
1 Identify the anode and cathode terminals of the Zener diode.
2 Wire the circuit as shown in figure of forward bias condition. By varying the input
voltage in steps and the ammeter and voltmeter readings are noted down.
3 Wire the circuit as shown in figure of reverse bias condition. By varying the input
voltage in steps and the ammeter and voltmeter readings are noted down.
4 Plot the graph between voltage and current for both forward and reverse bias
conditions.
RESULT:
Thus the forward and reverse V-I characteristics of the Zener diode were obtained and
the characteristics curves were plotted.
Page | 9
Ex.No: 3. CHARACTERISTICS OF FIELD EFFECT TRANSISTOR
AIM:
To obtain the Drain and Transfer (V-I) characteristics of FET and to plot the
characteristics.
APPARATUS REQUIRED:
QUANTITY
(NO.S)
1 FET BFW10/11 1
2 Resistor 1 kΩ 2
3 Voltmeter D.C (0 – 5V) 1
(0 – 30V) 1
4 Ammeter D.C (0 – 50mA) 1
5 Regulated Power Supply D.C (0 – 30V) 2
6 Bread Board 1
THEORY:
A FET is a three terminal device, having the characteristics of high input impedance
and less noise, the Gate to Source junction of the FET s always reverse biased. In response to
small applied voltage from drain to source, the n-type bar acts as sample resistor, and the
drain current increases linearly with VDS. With increase in ID the ohmic voltage drop between
the source and the channel region reverse biases the junction and the conducting position of
the channel begins to remain constant. The VDS at this instant is called “pinch of voltage”. If
the gate to source voltage (VGS) is applied in the direction to provide additional reverse bias,
the pinch off voltage ill is decreased.
Page | 10
CIRCUIT DIAGRAM :
(0 – 50mA)MC 1 kΩ
- A +
BFW11 D
1 kΩ G + (0 – 30V)
(0 – 30V) - S V (0-30)V MC
V
(0 – 5V) -
+ MC
TABULATION:
Transfer Characteristics
VDS =
SL.No
VGS (V) ID (mA)
1.
2.
3.
4.
5.
6.
7.
Page | 11
Drain Characteristics
VGS = VGS =
Sl.No
VDS (V) ID (mA) VDS (V) ID (mA)
1.
2.
3.
4.
5.
6.
7.
Page | 12
MODEL GRAPH:
Transfer Characteristics Drain Characteristics
ID (mA) IDSS(mA)
VGS5
VGS4
VGS3
VGS2
VGS1
VGS (V) 0 0 VDS(V)
PIN DIAGRAM:
BOTTOM VIEW OF BFW10:
SPECIFICATION :
Voltage : 30V, IDSS > 8mA.
Page | 13
PROCEDURE:
1 Identify the terminals of the FET given and set up the circuit on breadboard as shown
in figure.
2 Wire the circuit as shown in figure. By keeping the Gate Source voltage constant and
varying the Drain Source voltage, ID readings are noted down.
3 Wire the circuit as shown in figure. By keeping the Drain Source voltage constant and
varying the Gate Source voltage, ID readings are noted down.
4 The above procedure was repeated and ammeter and voltmeter readings were noted.
5 Plot the VI characteristics curves.
RESULT:
Thus the Drain and Transfer (V-I) characteristics of the FET were obtained and the
characteristics curves were plotted.
Page | 14
Ex.No: 4. INPUT AND OUTPUT CHARACTERISTICS OF TRANSISTOR IN

CE CONFIGURATION
AIM:
To obtain the input and output (VI) characteristics of a BJT in Common Emitter
Configuration and to plot the characteristics.
APPARATUS REQUIRED:
QUANTITY
(NO.S)
1 Bipolar Junction Transistor SL 100 1
2 Resistor 1 kΩ, 1
1 kΩ 1
(0 – 30V) 1
4 Ammeter MC (0 – 500μA) 1
MC (0 – 100mA) 1
6 Bread Board 1
THEORY:
A transistor is a three terminal device. The terminals are emitter, base, collector. In
common emitter configuration, input voltage is applied between base and emitter terminals
and output is taken across the collector and emitter terminals. Therefore, the emitter terminal
is common to both input and output. The input characteristics resemble that of a forward
biased diode curve. This is expected since the Base-Emitter junction of the transistor is
forward biased.
As compared to CB arrangement IB increases less rapidly with VBE. Therefore, input

resistance of CE circuit is higher than that of CB circuit. The output characteristics are drawn
Page | 15
CIRCUIT DIAGRAM:
(0 – 100mA)MC
- A + 1 kΩ
1 kΩ (0 – 500μA)MC C
+ - B
A SL 100
+ (0 – 30V)
+ E V
V (0 – 30V)
(0 – 30V) (0 – 2V)MC MC -
-
TABULATION :
Input Characteristics
VCE = VCE =
Sl.No
VBE (V) IB (μA) VBE (V) IB (μA)
1.
2.
3.
4.
5.
6.
Output Characteristics
Sl.No IB = IB = IB =
VCE (V) IC (mA) VCE (V) IC (mA) VCE (V) IC (mA)
1.
2.
3.
4.
5.
6.
Page | 16
MODELGRAPH:
Input Characteristics: Output Characteristics:
IB( μA) IC ( mA) IB3
IB2
VCE1 VCE2 VCE3

IB1
0 VEB (V) 0 VCE (V)
*** Note – VCE1 < VCE2 < VCE3 Similarly IB1 < IB2 < IB3
PIN DIAGRAM:
Bottom View SL100
E C
Page | 17
between Ic and VCE at constant IB. The collector current varies with VCE in few volts only.
After this the collector current becomes almost constant, and independent of VCE. The value of
VCE up to which the collector current changes with VCE is known as Knee voltage. The
transistor always operated in the region above Knee voltage, IC is always constant and is
approximately equal to IB.
FORMULA USED:
 Input Impedance = ΔVEB / Δ IB Ω
 Output Admittance = Δ IC / ΔVCE mho
 Current Gain = Δ IC / Δ IB
 Voltage Gain = ΔVCE / ΔVEB
PROCEDURE:
1 Identify the Emitter, Base and Collector terminals of the transistor given and set up the
circuit on breadboard as shown in figure.
2 Wire the circuit as shown in figure. By keeping the output voltage (Collector Voltage)
constant and varying the input voltage (Base Voltage) ammeter and voltmeter readings
are noted down.
3 By keeping the input current (Base Current) constant and varying the output voltage
(Collector Voltage), the ammeter and voltmeter readings are noted down.
4 The above procedure shall be repeated for different output voltage and input current
and readings can be taken.
5. Plot the VI characteristics curves.
RESULT:
Thus the input and output (V-I) characteristics of a transistor in CE configuration were
obtained and the characteristics curves were plotted.
Page | 18
Ex.No: 5. INPUT AND OUTPUT CHARACTERISTICS OF TRANSISTOR IN
CB CONFIGURATION
AIM:
To obtain the input and output (VI) characteristics of a BJT in Common Base
Configuration and to plot the characteristics.
APPARATUS REQUIRED:
QUANTITY
(NO.S)
1 Bipolar Junction Transistor SL 100 1
2 Resistor 1 kΩ 2
MC (0 – 30V) 1
6 Bread Board 1
THEORY:
Bipolar Junction Transistor (BJT) is a three-terminal semiconductor device capable of
amplifying an ac signal. The three terminals are called the emitter, the base, and the collector.
The device is made up three “layers” of p-type and n-type semiconductor material. BJTs
consist of a thin base layer (either P- or N-type) sandwiched between two layers of the
opposite type material. Thus, BJTs are either NPN or PNP. They are somewhat like two
interconnected, back to- back diodes, with two diode junctions.
Page | 19
CIRCUIT DIAGRAM:
(0 – 50mA)MC 1 kΩ
- A +
SL 100
1kΩ (0 – 50mA) MC E C
- +
A
+ (0 – 30V)
- V
V B (0 – 30V)
(0 – 30V) (0 – 2V)MC MC -
+
TABULATION:
Input Characteristics
VCB = VCB =
Sl.No
VBE (V) IE (mA) VBE (V) IE (mA)
1.
2.
3.
4.
5.
6.
Output Characteristics
Sl.No IE = IE = IE =
VCB (V) IC (mA) VCB (V) IC (mA) VCB (V) IC (mA)
1.
2.
3.
4.
5.
6.
Page | 20
MODEL GRAPH:
Input characteristics: output characteristics:
IE (mA)
IC (mA)
VCB1 VCB2 VCB3

IE3
IE2
IE1
0 VEB(V) 0 VCB (V)
*** Note – VCB1 > VCB2 > VCB3 Similarly IE1 < IE2 < IE3
Page | 21
In CB configuration, the base is common to both input (emitter) and output (collector).
For normal operation, the E-B junction is forward biased and C-B junction is reverse biased.
The input characteristics are plots of IE versus VBE at constant values of VCB. These
characteristics will look like diode characteristics, particularly if the collector is shorted to the
emitter and the emitter-base junction is forward biased. The output characteristics, often
called the collector characteristics, are plots of IC versus VCB at constant values of IE.
FORMULA USED:
 Input Impedance = ΔVEB / Δ IE Ω
 Output Admittance = Δ IC / ΔVCB mho
 Current Gain = Δ IC / Δ IE
 Voltage Gain = ΔVCB / ΔVEB
PROCEDURE:
2 Wire the circuit as shown in figure. By keeping the output voltage (Collector Voltage)
constant and varying the input voltage (Emitter Voltage) ammeter and voltmeter
readings are noted down.
3 Wire the circuit as shown in figure. By keeping the input current (Emitter Current)
constant and varying the output voltage (Collector Voltage) ammeter and voltmeter
readings are noted down.
4 The above procedure shall be repeated for different output voltage and readings can be
taken.
5 Plot the VI characteristics curves.
RESULT:
Thus the input and output (V-I) characteristics of BJT in CB configuration were
obtained and the characteristics curves were plotted.
Page | 22
Ex.No: 6. SINGLE PHASE HALF WAVE AND FULL WAVE RECTIFIER
AIM:
To construct half wave & full wave rectifier circuits using diodes & observe the input
& output wave forms with & without filter.
APPARATUS REQUIRED:
QUANTITY
(NO.S)
1 Diode IN 4001 4
2 Resistor 1 KΩ 1
3 Capacitor 100 μF,33 μF 1
4 Transformer Step-down 230 V / 1

(12 – 0 – 12) V
5 CRO with Probe 1
6 Bread Board 1
THEORY:
HALF-WAVE RECTIFIER:
Figure shows a basic half-wave diode rectifier circuit. During the positive half-cycle of the
input voltage, the diode is forward-biased for all instantaneous voltages greater than the
diode cut-in voltage Vγ. Current flowing through the diode during the positive half-cycle
produces approximately a half sine wave of voltages across the load resistor, as shown in the
Figure. To simplify our discussions, we will assume that the diode is ideal and that the peak
input voltage is always much larger than the Vγ of the diode. Hence, we assume that the zero
of the rectified voltage coincides with the zero of the input voltage. On the negative half-cycle
of the input voltage, the diode is reverse-biased. Ignoring the reverse leakage current of the
diode, the load current drops to zero, resulting in zero load voltage (output voltage), as
shown in Figure. Thus, the diode circuit has rectified the input ac voltage, converting the ac
voltage to a dc voltage.
Page | 23
CIRCUIT DIAGRAM:
Half Wave Rectifier:
P
IN 4007
C=0.100mF
230 V, 50 Hz
1 Φ Supply 1 KΩ CRO
N
Step-down Transformer
(12 – 0 – 12V)
Full Wave Rectifier:

Step-down Transformer
(12 – 0 – 12V)
P
D1 D2
230 V, 50 Hz
1 Φ Supply
D3 D4 C
1 KΩ CRO
N
TABULATION:
Without Filter With Filter (small value)_______ μF With Filter( large value)_______ μF
Rectifier T (mS) Vm T (mS)

Vm T Vm VRipple VRipple
(V) (mS) (V) Charging Discharging (V) Charging Discharging
Half Wave
Rectifier
Full Wave
Rectifier
Input voltage (Vm):________ Time in mS: _________
Page | 24
MODEL GRAPH:
Vin (V)
Vm
Input Voltage
0 Time
Vout (V)
Output of Half Wave Rectifier without filter
0 Time
Vm
Output of Half Wave Rectifier with filter
VRipple
0 Time
Vm Output of Full Wave Rectifier without filter
0
Time
Vm
Output of Full Wave Rectifier with filter
0 Time
Page | 25
FULL-WAVE RECTIFIER:
Figure shows a full-wave bridge rectifier with a load resistor RL and an input sine
wave derived from a transformer. During the positive half-cycle of the input voltage, diodes
D2 and D3 are forward biased and diodes D1 and D4 are reverse biased. Therefore, terminal
A is positive and terminal B is negative, as shown in Figure. During the negative half-cycle,
diodes D1 and D4 conduct, and again terminal A is positive and terminal B is negative. Thus,
on either half-cycle, the load voltage has the same polarity and the load current is in the same
direction, no matter which pair of diodes is conducting. The full-wave rectified signal is
shown in Figure, with the Vo being the output voltage. Since the area under the curve of the
full-wave rectified signal is twice that of the half-wave rectified signal, the average or dc value
of the full-wave rectified signal, Vdc, is twice that of the half-wave rectifier.
PROCEDURE:
1. Circuit connections were given as per the circuit diagram.
2. Input waveform’s magnitude and frequency was measured with the help of CRO.
3. Supply is switched ON and the output waveform was obtained in the CRO.
4. Output waveform’s magnitude and time period was measured.
5. Graphs were plotted for Half wave and Full wave rectifier outputs.
RESULT:
Thus the output of Half wave and Full wave rectifiers were obtained and the curves
were plotted.
Page | 26
Ex.No: 7. CHARACTERISTICS OF UNI JUNCTION TRANSISTOR
AIM:
To obtain the V-I characteristics of a Uni Junction Transistor and to plot the
characteristics.
APPARATUS REQUIRED:
QUANTITY
(NO.S)
1 Uni Junction Transistor 2N2646 1
5 Bread Board 1
THEORY:
A Uni-Junction Transistor (UJT) is an electronic semiconductor device that has only

one junction. The UJT Uni-Junction Transistor (UJT) has three terminals emitter (E) and two
bases (B1 and B2). The base is formed by lightly doped n-type bar of silicon. The emitter is of
p-type and it is heavily doped. The UJT, is a simple device that is essentially a bar of N type
semiconductor material into which P type material has been diffused somewhere along its
length. The UJT is biased with a positive voltage between the two bases. This causes a
potential drop along the length of the device. When the emitter voltage is driven
approximately one diode voltage above the voltage at the point where the P diffusion
(emitter) is, current will begin to flow from the emitter into the base region. Because the base
region is very lightly doped, the additional current (actually charges in the base region)
causes (conductivity modulation) which reduces the resistance of the portion of the base
between the emitter junction and the B2 terminal. This reduction in resistance means that the
emitter junction is more forward biased, and so even more current is injected. Overall, the
effect is a negative resistance at the emitter terminal. This is what makes the UJT useful,
especially in simple oscillator circuits
Page | 27
CIRCUIT DIAGRAM :
1 kΩ
2N2646
(0 – 50mA)MC B1
1 kΩ E
+ A -
+
+ B2 V (0 – 30V)
(0 – 30V) V -
- (0 – 30V) MC (0 – 30V)MC
TABULATION:
VBB = VBB =
Sl.No VE (V) IE (mA) VE (V) IE (mA)
1.
2.
3.
4.
5.
6.
7.
MODEL GRAPH :
Page | 28
PROCEDURE:
1. Identify the terminals of the transistor given and set up the circuit on breadboard as
shown in figure.
2. By keeping the Base – Base voltage (VBB) constant and varying the Emitter Voltage
ammeter readings are noted down.
3. The above procedure shall be repeated for different VBB and current readings can be
taken.
4. Plot the VI characteristics curves.
PIN DIAGRAM:
BOTTOM VIEW OF 2N2646:

SPECIFICATION FOR 2N2646:
 Inter base resistance RBB = 4.7 to 9.1 K
 Minimum Valley current = 4 mA
 Maximun Peak point emitter current 5 A
 Maximum emitter reverse current 12 A.
RESULT:
Thus the V-I characteristics of the UJT were obtained and the characteristics curves
were plotted.
Page | 29
Ex.No: 8. COMMON EMITTER AMPLIFIER
AIM:
To obtain the frequency response of Common Emitter amplifier.
APPARATUS REQUIRED:
QUANTITY
(NO.S)
1 Bipolar Junction Transistor BC107 1
2 Resistor 47 KΩ, 10 KΩ, Each 1

2.2 KΩ,820 Ω ,
680 Ω
3 Capacitor 22 μF, 10 μF , Each 1
15 μF
4 AFO with probe 1
5 CRO with probe 1
7 Bread Board 1
FORMULA USED:
 Gain in dB = 20 log (Vo / Vi)
THEORY:
The input AC signal is applied across the base-emitter terminals and the output signal
is taken across the collector – emitter terminals. The emitter base junction of a transistor is
forward biased by the VBB supply. The collector base junction is reverse biased by the VCC
supply. Each capacitor acts like a switch, which is open to a direct current but shorted to an
alternating current. Because of this, a blocking capacitor blocks the direct current. This action
isolates DC bias from an AC signal in the circuit.
Page | 30
CIRCUIT DIAGRAM:
TABULATION:
S.No Frequency (Hz) With CE

Vo (V) Gain (dB)
MODEL GRAPH:
Page | 31
A common emitter amplifier has the following important characteristics
 Its input resistance is in the range of 1 KΩ to 2 KΩ, which is considered to be
moderately low.
 Its output resistance is about 50 KΩ and is considered to be moderately large.
 It produces very large power gain and is of the order of 10000 or so
 It produces phase reversal of the input signal.
The common emitter amplifier is the most widely used amplifier of its large voltage and
power gains. In addition to this, its input and output resistances are suitable for most of the
applications.
PROCEDURE:
2 Wire the circuit as shown in figure.
3 Using AFO the sinusoidal input with constant magnitude is supplied
4 The frequency of the input increases gradually and the output is obtained.
5 Using a CRO the output waveform is obtained.
RESULT:
Thus the Common Emitter amplifier circuit is constructed and the amplified input
signal is obtained and the graph was plotted.
Page | 32
Ex.No: 9. RC PHASE SHIFT OSCILLATOR
AIM:
To design and set up an RC phase shift oscillator using BJT and to observe the
sinusoidal output waveform.
APPARATUS REQUIRED:
QUANTITY
(NO.S)
1 Transistor BC547 1
2 Resistor 47KΩ, 1 (each)

10KΩ,2.2kΩ,680Ω
3 Resistor 4.7KΩ 3
3 Capacitor 1µF,22µF 1(each)
4 Capacitor 0.01 µF 3
5 CRO
7 Bread Board 1
Connecting wires Required
FORMULA USED:
1
Output frequency fo 
2RC 6
THEORY:
An oscillator is an electronic circuit for generating an ac signal voltage with a dc supply as the
only input requirement. The frequency of the generated signal is decided by the circuit
elements. An oscillator requires an amplifier, a frequency selective network, and a positive
feedback from the output to the input. The Barkhausen criterion for sustained oscillation is Aβ
= 1 where A is the gain of the amplifier and β is the feedback factor. The unity gain means
signal is in phase. (If the signal is 1800 out of phase and gain will be -1.)
Page | 33
CIRCIT DIAGRAM:
TABULATION:
Sl.No Output in volts Time (mS) Frequency (Hz)
1.
Theoretical output frequency :-_________Hz
Practical output frequency :-_________Hz
MODEL GRAPH:
Page | 34
If a common emitter amplifier is used, with a resistive collector load, there is a 1800 phase shift
between the voltages at the base and the collector. Feedback network between the collector
and the base must introduce an additional 1800 phase shift at a particular frequency. In the
figure shown, three sections of phase shift networks are used so that each section introduces
approximately 600 phase shift at resonant frequency.
PROCEDURE:
1. Identify the pin details of BC107 Transistor (or equivalent silicon Transistor such as
BC108/547) and test it using a multimeter. Set up the circuit on breadboard as shown in
figure.
2. A 12V Supply Voltage is given by using Regulated power supply and output is taken
from collector of the Transistor
3. By using CRO the output time period and voltage are noted.
4. Plot all the readings curves on a single graph sheet.
RESULT:
Thus the RC phase shift oscillator using BJT was designed and the output waveform
was plotted.
Page | 35
Ex.No: 10. CHARACTERISTICS OF PHOTO DIODE
AIM:
To obtain the forward and reverse VI characteristics of a photo diode and to plot the
characteristics.
APPARATUS REQUIRED:
QUANTITY
(NO.S)
1 Photo Diode 1
2 Resistor 1 KΩ 1
3 Voltmeter D.C (0 – 2V) 1
(0 – 30V) 1
4 Ammeter D.C (0 – 50mA) 2
(0 – 250μA)
6 Bread Board 1
FORMULA USED
Variable resistance used, rR = VD / ID Ω
THEORY:
A photo Diode is a two terminal PN junction device which operates in a reverse bias. It
has small transparent window, which allows light to strike the PN junction. A photo diode
differs from a rectifier diode in a sense that its reverse current increases with the light
intensity at the PN junction. When there is no light incident the reverse current is almost
negligible and is called the dark current. An increase in the amount of light energy produces
an increase in the reverse current for a given value of reverse bias voltage. This device is a low
noise, high speed and operates over a wide temperature range. The applications for this photo
diode includes remote control, light curtains, data transmission and measurement & control.
Page | 36
CIRCUIT DIAGRAM:
TABULATION:
Reverse Bias
Forward Bias
Sl.No V (volts) I (µA)
Sl.No V (volts) I (mA)
Dark Bright
1.
2. 1.
3. 2.
4. 3.
5. 4.
6. 5.
7. 6.
7.
Model Graph
Page | 37
PROCEDURE:
1. Identify the terminals of the Photo Diode given and set up the circuit on breadboard as
shown in figure.
2. Wire the circuit as shown in figure. By varying the input voltage, the ammeter and
voltmeter readings are noted down for forward bias condition.
3. Wire the circuit as shown in figure. By varying the input voltage, the ammeter and
voltmeter readings are noted down for reverse bias condition
4. VI characteristics curves were drawn.
RESULT:
Thus the forward and reverse V-I characteristics of a Photo Diode
were obtained and the characteristics curves were plotted.
38
Ex.No: 11. DESIGNING OF PRINTED CIRCUIT BOARD
AIM:
To design and test electronic circuit on Copper clad board.
APPARATUS REQUIRED:
The following items for making PCB
(a) Copper – Clad board
(b) Paint
(c) Ferric Chloride
(d) Plastic tray for etching.
PCB Fabrication – Theory:
A number of methods are available for making a PCB, the simplest being that of
drawing the pattern on a copper clad board with etchant resistant ink or paint, etching the
board and drilling the holes. This method is suitable where there is no need for precision and
the quantity required is only are or two pieces. But with the use of ICs and crowding of the
components on the board, this method becomes unsuitable as one has to have a very steady
hand in drawing the lines of required thickness with paint and brush. Printed Circuit Boards
(PCB) form the very basis for the construction of almost every electronic equipment. PCBs
have many advantages compared to conventional electronic circuit boards. PCB are small in
size and have a reliable performance. In the wires are replaced by conductor paths avoiding
the problem of loose wires. Problem of cross connection can be overcome easily. It has a
possibility of mass production and thus cost is less. Testing & repairs are facilitated as all the
points on the PCB are easily accessible. PCBs consist basically of a board of insulating material
covered with a thin layer of copper – a very good conductor. The insulating material generally
used is epoxy or bakelite. For eg, it two resistors have to be mounted in series, then it is only
necessary to drill four holes for their leads with a copper strip connecting the desired leads.
When the leads are soldered, the component is fixed securely in places and an electrical
39
contact is made between the lead and the copper coating of the PCB. Before mounting
components, copper has to be removed or itched off by means of chemicals.
A number of methods are available for making a PCB, the simplest being that of
drawing the pattern on a copper clad board with etchant resistant ink or paint, etching the
board and drilling the holes. This method is suitable where there is no need for precision and
the quantity required is only are or two pieces. But with the use of ICs and crowding of the
components on the board, this method becomes unsuitable as one has to have a very steady
hand in drawing the lines of required thickness with paint and brush.
Printed Circuit Boards (PCB) form the very basis for the construction of almost every
electronic equipment. PCBs have many advantages compared to conventional electronic
circuit boards. PCB are small in size and have a reliable performance. In the wires are
replaced by conductor paths avoiding the problem of loose wires. Problem of cross connection
can be overcome easily. It has a possibility of mass production and thus cost is less. Testing &
repairs are facilitated as all the points on the PCB are easily accessible.
PCBs consist basically of a board of insulating material covered with a thin layer of
copper – a very good conductor. The insulating material generally used is epoxy or bakelite.
For eg, it two resistors have to be mounted in series, then it is only necessary to drill four
holes for their leads with a copper strip connecting the desired leads. When the leads are
soldered, the component is fixed securely in places and an electrical contact is made between
the lead and the copper coating of the PCB. Before mounting components, copper has to be
removed or itched off by means of chemicals.
CIRCUIT DIAGRAM:
40
Pattern Circuit:
PROCEDURE:
Initial Preparation:
The initial preparation requires making of a negative transparency of the pattern to the
actual PCB size. If the PCB of pattern layout is already available, the same can be transferred
to a transparent (negative) film by photographic process. If the pattern is not available then it
should be drawn in a bigger size (2 to 4 times) to the scale, and then reduced to the actual size
photographically on film. The job of transferring the pattern on film (with or without
reduction) is generally done by block maker (for printing) processing studies who prepare
film for offset printing or commercial photographers specializing to produce photography.
With a little bit of extra care and efficient operation this job can also be done on a Xerox photo
copying machine and very economically too.
Painting:
Transfer the actual size PCB pattern on the copper clad board with the help of carbon
paper and painted with a paint where copper track are needed considering the PCB pattern.
Dried it for one hour now the PCB is ready for etching.
Etching:
Once the pattern on the PCB has been examined for defects and rectified, the board is ready
for etching. Place the board in solution of ferric chloride in a plastic tray so that the copper
41
portion is covered and uncovered portion is alternately removed by the solution. After the
etching is complete, wash the board thoroughly clean under running tap water.
Paint Removal:
Once the etching job is complete remove the paint resist from the image area with turpent oil.
Wash the cleaned surfaces thoroughly and dry quickly.
Finishing:
At this stage the PCB is ready for the final operation of drilling the holes. Drill the holes of
required size at the appropriate places, and place and solder the components properly and
test it.
Results:
PCB of Electronic Circuits have done and tested successfully.
42

191EE38 EDC Lab Manual

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P.S.R.

ELECTRONIC DEVICES AND

Prepared by, Approved by,

DEPARTMENT OF ELECTRICAL AND ELECTRONICS ENGINEERING

Characteristics of PN Junction Diode 3

Characteristics of Zener Diode 7

Characteristics of Field Effect Transistor 10

Input and Output Characteristics of Transistor in CE Configuration 15

Input and Output Characteristics of Transistor in CB Configuration 19

Single Phase Half Wave and Full Wave Rectifiers 23

Characteristics of Uni Junction Transistor 27

Common Emitter amplifier 30

RC phase shift oscillator 33

Resistor values - the resistor colour code

Most resistors have 4 bands: Orange 3

 The first band gives the first digit. Yellow 4

Small value resistors (less than 10 ohm)

Tolerance of resistors (fourth band of colour code)

Ex.No: 1. CHARACTERISTICS OF PN JUNCTION DIODE

and to find the static and dynamic resistance of P-N diode.

5 Regulated Power Supply (0 – 30V) 1

7 Connecting wires Required

 DC (or) Static Resistance, RD = VD / ID Ω

 AC (or) Dynamic Resistance, rd = ΔVD / Δ ID Ω

Forward Bias Condition Reverse Bias Condition

Diode (0 – 50mA) MC Diode (0 – 500μA) MC

(0-30)V + + - 1kΩ RPS + - 1k Ω

Sl.No Vf (volts) If (mA) Sl.No Vr (volts) Ir (µA)

V-I characteristics of PN junction diode

voltage, the ammeter and voltmeter readings are noted down.

the static and dynamic resistance of P-N diode are calculated.

Ex.No: 2. CHARACTERISTICS OF ZENER DIODE

1 Zener Diode IZ9.2 V 1

5 Regulated Power Supply (0 – 30V) 1

7 Connecting wires Required

device to avoid high current,

resistance. It is used in voltage regulators.

Forward Bias Condition Reverse Bias Condition

IZ9.2 (0 – 50mA)MC IZ9.2 (0 – 50mA)MC

MODEL GRAPH: If (mA)

Forward Bias Condition

Reverse Bias Condition Ir (mA)

FORWARD BIAS REVERSE BIAS

Sl.No Sl.No Vr (volts) Ir(mA)

1 Identify the anode and cathode terminals of the Zener diode.

the characteristics curves were plotted.

Ex.No: 3. CHARACTERISTICS OF FIELD EFFECT TRANSISTOR

3 Voltmeter D.C (0 – 5V) 1

4 Ammeter D.C (0 – 50mA) 1

5 Regulated Power Supply D.C (0 – 30V) 2

7 Connecting wires Required

the pinch off voltage ill is decreased.

Transfer Characteristics Drain Characteristics

VGS (V) 0 0 VDS(V)

BOTTOM VIEW OF BFW10:

Voltage : 30V, IDSS > 8mA.

varying the Drain Source voltage, ID readings are noted down.

varying the Gate Source voltage, ID readings are noted down.

Input voltage (Vm): Time in mS: _