Darlington: Silicon PNP Epitaxial Planar Transistor (Complement To Type 2SD2561)

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( 7 0Ω ) E

Darlington 2SB1648 B

Equivalent circuit C

Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2561) Application : Audio, Series Regulator and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-200
Symbol Ratings Unit Symbol Conditions Ratings Unit
VCBO –150 V ICBO VCB=–150V –100max µA 36.4±0.3 6.0±0.2

VCEO –150 V IEBO VEB=–5V –100max µA 2-ø3.2±0.1


24.4±0.2 2.1
9
VEBO –5 V V(BR)CEO IC=–30mA –150min V
5000min∗

7
IC –17 A hFE VCE=–4V, IC=–10A

21.4±0.3
a
IB –1 A VCE(sat) IC=–10A, IB=–10mA –2.5max V b
PC 200(Tc=25°C) W VBE(sat) IC=–10A, IB=–10mA –3.0max V
2
Tj 150 fT VCE=–12V, IE=2A 45typ MHz

4.0max
20.0min
°C
3
Tstg –55 to +150 °C COB VCB=–10V, f=1MHz 320typ pF 0.65 +0.2
-0.1
1.05 +0.2
-0.1

∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)


5.45±0.1 5.45±0.1 3.0 +0.3
-0.1

■Typical Switching Characteristics (Common Emitter) B C E


VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 18.4g
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) a. Part No.
–40 4 –10 –10 5 –10 10 0.7typ 1.6typ 1.1typ b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)


A
0m

(V C E =–4V)
–1

Collector-Emitter Saturation Voltage V C E (s at) (V)

–17 –3mA –2mA –3 17


mA

–1 .5 m A
–50

–15 15

Collector Current I C (A)


–1.0 mA
Collector Current I C (A)

)
mp
–0.8 mA –2

Te
I C =–15A
–10 10

se
(Ca
–0.5mA
I C =–1 0A

5˚C

p)

)
emp
Tem
12

eT
I B =–0.3mA I C =–5A

ase
–1

Cas
–5 5

C (C

˚C (
25˚

–30
0 0 0
0 –2 –4 –6 –0.2 –0.5 –1 –5 –10 –50 –100 –200 0 –1 –2 –3
Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics


θ j - a ( ˚C/W)

(V C E =–4V) (V C E =–4V)
50,000 50000 2
125˚C
DC Curr ent Gain h FE

DC Curr ent Gain h FE

Transient Thermal Resistance

Typ 25˚C 1

–30˚C
10,000 10000
0.5

5,000 5000

1,000 1000 0.1


–0.2 –0.5 –1 –5 –10 –17 –0.2 –0.5 –1 –5 –10 –17 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating


(V C E =–12V)
60 –50 200

10
10 m
Maxim um Power Dissip ation P C (W)

0m s
s 160
–10
Cut- off F req uenc y f T (MH Z )

DC
W
ith
Co lle ctor Cu rre nt I C (A)

40 –5
In
fin

120
ite
he
at
si
nk

–1
80
20 –0.5
Without Heatsink
Natural Cooling
40

–0.1
Without Heatsink
5
0 –0.05 0
0.02 0.05 0.1 0.5 1 5 10 –3 –5 –10 –50 –100 –200 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

53

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