Darlington: Silicon PNP Epitaxial Planar Transistor (Complement To Type 2SD2561)
Darlington: Silicon PNP Epitaxial Planar Transistor (Complement To Type 2SD2561)
Darlington: Silicon PNP Epitaxial Planar Transistor (Complement To Type 2SD2561)
Darlington 2SB1648 B
Equivalent circuit C
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2561) Application : Audio, Series Regulator and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-200
Symbol Ratings Unit Symbol Conditions Ratings Unit
VCBO –150 V ICBO VCB=–150V –100max µA 36.4±0.3 6.0±0.2
7
IC –17 A hFE VCE=–4V, IC=–10A
21.4±0.3
a
IB –1 A VCE(sat) IC=–10A, IB=–10mA –2.5max V b
PC 200(Tc=25°C) W VBE(sat) IC=–10A, IB=–10mA –3.0max V
2
Tj 150 fT VCE=–12V, IE=2A 45typ MHz
4.0max
20.0min
°C
3
Tstg –55 to +150 °C COB VCB=–10V, f=1MHz 320typ pF 0.65 +0.2
-0.1
1.05 +0.2
-0.1
(V C E =–4V)
–1
–1 .5 m A
–50
–15 15
)
mp
–0.8 mA –2
Te
I C =–15A
–10 10
se
(Ca
–0.5mA
I C =–1 0A
5˚C
p)
)
emp
Tem
12
eT
I B =–0.3mA I C =–5A
ase
–1
Cas
–5 5
C (C
˚C (
25˚
–30
0 0 0
0 –2 –4 –6 –0.2 –0.5 –1 –5 –10 –50 –100 –200 0 –1 –2 –3
Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V)
(V C E =–4V) (V C E =–4V)
50,000 50000 2
125˚C
DC Curr ent Gain h FE
Typ 25˚C 1
–30˚C
10,000 10000
0.5
5,000 5000
10
10 m
Maxim um Power Dissip ation P C (W)
0m s
s 160
–10
Cut- off F req uenc y f T (MH Z )
DC
W
ith
Co lle ctor Cu rre nt I C (A)
40 –5
In
fin
120
ite
he
at
si
nk
–1
80
20 –0.5
Without Heatsink
Natural Cooling
40
–0.1
Without Heatsink
5
0 –0.05 0
0.02 0.05 0.1 0.5 1 5 10 –3 –5 –10 –50 –100 –200 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
53