(3 k Ω)(1 0 0Ω) E

Darlington
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2081)
2SB1259 B

Equivalent circuit C

Application : Driver for Solenoid, Relay and Motor and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM20(TO220F)
Symbol Ratings Unit Symbol Conditions Ratings Unit 10.1±0.2 4.2±0.2

4.0±0.2
2.8 c0.5
VCBO –120 V ICBO VCB=–120V –10max µA
VCEO –120 V IEBO VEB=–6V –10max mA

8.4±0.2
16.9±0.3
VEBO –6 V V(BR)CEO IC=–10mA –120min V ø3.3±0.2
a
IC –10(Pulse–15) A hFE VCE=–4V, IC=–5A 2000min

0.8±0.2
b
IB –1 A VCE(sat) IC=–5A, IB=–10mA –1.5max V

±0.2
3.9
PC 30(Tc=25°C) W VBE(sat) IC=–5A, IB=–10mA –2.0max V

13.0min
Tj 150 °C fT VCE=–12V, IE=0.2A 100typ MHz 1.35±0.15

1.35±0.15
Tstg –55 to +150 °C COB VCB=–10V, f=1MHz 145typ pF
0.85 +0.2
-0.1
0.45 +0.2
-0.1 2.4±0.2
2.54 2.54
■Typical Switching Characteristics (Common Emitter) 2.2±0.2

VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.0g
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) a. Part No.
B C E
–30 10 –3 –10 5 –6 6 0.6typ 1.6typ 0.5typ b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

(V C E =–4V)
Collector-Emitter Saturation Voltage V C E (s at) (V )

–15 –3 –10
A m A
A

0m 10
0m

–
–2
–5

A
–5m
–8

Collector Current I C (A)

A
–3m
Collector Current I C (A)

–10 –2
–2mA
–6

mp)
Temp

)
Temp
I C =–10A

e Te
I B =–1mA

(Case
–4

(Cas

(Case
–5 –1 –5A

125˚C

25˚C
–1A

–30˚C
–2

0 0 0
0 –1 –2 –3 –4 –5 –6 –0.2 –1 –10 –100 –1000 0 –1 –2 –2.2
Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

(V C E =–4V) (V C E =–4V)
θ j - a (˚C /W)

20000 20000 5
10000 10000
Typ
D C Cur r ent Gai n h F E

D C Cur r ent Gai n h F E

5000 5000
5˚C
Transient Thermal Resistance

12
˚C
1000 25
1000
500 0˚C
500 –3 1

100
100 0.5
50

50 20 0.3
–0.03 –0.1 –0.5 –1 –5 –10 –0.02 –0.1 –0.5 –1 –5 –10 1 10 100 1000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =–12V)
200 –20 30

Natural Cooling
10

–10
Typ
0µ

Silicone Grease
M aximu m Power Dissipat io n P C (W)
1m

Heatsink: Aluminum
10

–5
s

in mm
Cut- off F req uency f T (MH Z )

DC
s
Co lle ctor Cu rren t I C (A)

20
W
ith
In

–1
fin

100 150x150x2
ite

–0.5
he

100x100x2
at
si

10
nk

Without Heatsink
Natural Cooling 50x50x2
–0.1

Without Heatsink
–0.05 2
0 –0.03 0
0.05 0.1 0.5 1 5 10 –3 –5 –10 –50 –100 –200 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

41