LAPT 2SC2922

Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1216) Application : Audio and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-200
Symbol 2SC2922 Unit Symbol Conditions 2SC2922 Unit
36.4±0.3 6.0±0.2
VCBO 180 V ICBO VCB=180V 100max µA
24.4±0.2 2.1
VCEO 180 V IEBO VEB=5V 100max µA 2-ø3.2±0.1 9

VEBO 5 V V(BR)CEO IC=25mA 180min V

7
30min∗

21.4±0.3
IC 17 A hFE VCE=4V, IC=8V a
IB 5 A VCE(sat) IC=8A, IB=0.8A 2.0max V b

PC 200(Tc=25°C) W fT VCE=12V, IE=–2A 50typ MHz

2

4.0max
20.0min
Tj 150 °C COB VCB=10V, f=1MHz 250typ pF 3
www.DataSheet4U.com 0.65 +0.2
Tstg –55 to +150 °C ∗hFE Rank O(30 to 60), Y(50 to 100), P(70 to 140), G(90 to 180) 1.05 +0.2
-0.1
-0.1

5.45±0.1 5.45±0.1 3.0 +0.3

-0.1
■Typical Switching Characteristics (Common Emitter)
B C E
VCC RL IC VB2 IB1 IB2 ton tstg tf Weight : Approx 18.4g
(V) (Ω) (A) (V) (A) (A) (µs) (µs) (µs) a. Type No.
40 4 10 –5 1 –1 0.2typ 1.3typ 0.45typ b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

(V C E =4V)
17 3 17
Collector-Emitter Saturation Voltage V C E(s a t) (V )

1A
A mA
A

0m 600 mA
70
1.5

500
15 15
A
400m
mA
300

Collector Current I C (A)

Collector Current I C (A)

A 2
200m
10 10

100 mA

p)
em

p)
I C =10A

Tem
eT
1
5 5

as

se
50mA

(C

(Ca
5˚C
5A

˚C
12

I B =20mA
˚C

–30
25

0 0 0
0 1 2 3 4 0 0.2 0.4 0.6 0.8 1.0 0 1 2 2.4
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

θ j - a (˚C /W)

(V C E =4V) (V C E =4V)
200 200 2

125˚C
DC Cur rent Gain h F E
DC C urrent G ain h FE

Transient Thermal Resistance

100 100 1
Typ 25˚C

–30˚C
50 50 0.5

10 10 0.1
0.02 0.1 0.5 1 5 10 17 0.02 0.1 0.5 1 5 10 17 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =12V)
80 50 200
10

Maxim um Power Di ssip ation P C (W)

m

160
s
Cut -off Fre quency f T ( MH Z )

60 DC
W

Typ 10
ith
Collector Cur rent I C (A)

In
fin

5 120
ite
he

40
at
si
nk

80

1
20
Without Heatsink 40
0.5
Natural Cooling
Without Heatsink
5
0 0.2 0
–0.02 –0.1 –1 –5 –10 2 10 100 300 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

61
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