2SA1694

Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4467) Application : Audio and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P)
Symbol 2SA1694 Unit Symbol Conditions 2SA1694 Unit
15.6±0.4 4.8±0.2

5.0±0.2
µA

2.0
–10max

1.8
VCBO –120 V ICBO VCB=–120V 9.6 2.0±0.1

VCEO –120 V IEBO VEB=–6V –10max µA

VEBO –6 V V(BR)CEO IC=–50mA –120min V

19.9±0.3

4.0
IC –8 A hFE VCE=–4V, IC=–3A 50min∗ a ø3.2±0.1
b
IB –3 A VCE(sat) IC=–3A, IB=–0.3A –1.5max V
PC 80(Tc=25°C) W fT VCE=–12V, IE=0.5A 20typ MHz 2

4.0max
20.0min
Tj 150 °C COB VCB=–10V, f=1MHz 300typ pF 3

Tstg –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 1.05 +0.2
-0.1 0.65 +0.2
-0.1

5.45±0.1 5.45±0.1 1.4

■Typical Switching Characteristics (Common Emitter) B C E
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.0g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Type No.
–40 10 –4 –10 5 –0.4 0.4 0.14typ 1.40typ 0.21typ b. Lot No.

I C – V CE Characteristics (Typical) V CE ( s a t ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

(V CE =–4V)
–8 –3 –8
A A
Collector-Emitter Saturation Voltage V C E (s at) (V )
A

0m 0m
m

0 5
–1
50

–2 mA
–3

–100

Collector Current I C (A)

–6 –7 5m A –6
Collector Current I C (A)

–2
–50mA

–4 –4

mp)

mp)
mp)
–25mA

e Te

e Te
e Te
–1

Cas

(Cas
(Cas
–2 –2

˚C (
I C =–8A
I B =–10mA

–30˚C
25˚C
125
–4A
–2A
0 0 0
0 –1 –2 –3 –4 0 –0.1 –0.2 –0.3 –0.4 –0.5 –0.6 –0.7 –0.8 –0.9 –1.0 0 –0.5 –1.0 –1.5
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

θ j - a ( ˚ C/W)

(V C E =–4V) (V C E =–4V)
200 300 3

Typ 125˚C
DC Curr ent Gain h FE
D C Cur r ent Gai n h F E

Transient Thermal Resistance

25˚C
100
100 1
–30˚C

50
50 0.5

30 30 0.3
–0.02 –0.1 –0.5 –1 –5 –8 –0.02 –0.1 –0.5 –1 –5 –8 1 10 100 1000

Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =–12V)
30 –20 80
10
m
–10 100ms s
Maxim um Power Dissip ation P C (W)
Cut- off F req uency f T (MH Z )

Typ –5 DC 60
W
ith
Co lle ctor Cu rren t I C (A)

20
In
fin
ite
he

40
at
si

–1
nk

10
–0.5
20
Without Heatsink
Natural Cooling

Without Heatsink
3.5
0 –0.1
0.02 0.05 0.1 0.5 1 5 8 0
–5 –10 –50 –100 –200 0 25 50 75 100 12 5 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

28
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