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    Tip112 Kec

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    Dabro Fabio
    This document provides technical specifications for the TIP112 semiconductor transistor. It is an epitaxial planar NPN transistor intended for industrial use. Key features include a high DC current gain of 1000 minimum and low collector-emitter saturation voltage. Maximum ratings include a collector current of 2A DC and 4A pulse as well as a collector power dissipation of 2W at 25°C case temperature rising to 50W at 100°C case temperature.

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    Tip112 Kec

    Uploaded by

    Dabro Fabio
    36 views2 pages
    This document provides technical specifications for the TIP112 semiconductor transistor. It is an epitaxial planar NPN transistor intended for industrial use. Key features include a high DC current gain of 1000 minimum and low collector-emitter saturation voltage. Maximum ratings include a collector current of 2A DC and 4A pulse as well as a collector power dissipation of 2W at 25°C case temperature rising to 50W at 100°C case temperature.

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    TIP112-KEC

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    This document provides technical specifications for the TIP112 semiconductor transistor. It is an epitaxial planar NPN transistor intended for industrial use. Key features include a high DC current gain of 1000 minimum and low collector-emitter saturation voltage. Maximum ratings include a collector current of 2A DC and 4A pulse as well as a collector power dissipation of 2W at 25°C case temperature rising to 50W at 100°C case temperature.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    36 views2 pages

    Tip112 Kec

    Uploaded by

    Dabro Fabio
    This document provides technical specifications for the TIP112 semiconductor transistor. It is an epitaxial planar NPN transistor intended for industrial use. Key features include a high DC current gain of 1000 minimum and low collector-emitter saturation voltage. Maximum ratings include a collector current of 2A DC and 4A pulse as well as a collector power dissipation of 2W at 25°C case temperature rising to 50W at 100°C case temperature.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 2

    SEMICONDUCTOR TIP112

    TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR

    MONOLITHIC CONSTRUCTION WITH BUILT IN


    BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.

    FEATURES
    ・High DC Current Gain.
    : hFE=1000(Min.), ＠VCE=4V, IC=1A.
    ・Low Collector-Emitter Saturation Voltage.
    ・Complementary to TIP117.

    MAXIMUM RATING (Ta=25℃)


    CHARACTERISTIC SYMBOL RATING UNIT
    Collector-Base Voltage VCBO 100 V
    Collector-Emitter Voltage VCEO 100 V
    Emitter-Base Voltage VEBO 5 V
    DC IC 2
    Collector Current A
    Pulse ICP 4
    Base Current DC IB 50 mA

    Collector Power Ta=25℃ 2


    PC W
    Dissipation Tc=25℃ 50 EQUIVALENT CIRCUIT
    Junction Temperature Tj 150 ℃
    Storage Temperature Range Tstg -65～150 ℃

    ELECTRICAL CHARACTERISTICS (Ta=25℃)


    CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
    ICEO VCE=50V, IB=0 - - 2
    Collector Cut-off Current mA
    ICBO VCB=100V, IE=0 - - 1
    Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 2 mA
    VCE=4V, IC=1A 1000 - -
    DC Current Gain hFE
    VCE=4V, IC=2A 500 - -
    Collector-Emitter Sustaining Voltage VCEO(SUS) IC=30mA, IB=0 100 - - V
    Collector-Emitter Saturation Voltage VCE(sat) IC=2A, IB=8mA - - 2.5 V
    Base-Emitter On Voltage VBE(ON) VCE=4V, IC=2A - - 2.8 V
    Collector Output Capacitance Cob VCB=10V, IE=0, f=0.1MHz - - 100 pF

    1999. 11. 16 Revision No : 1 1/2


    TIP112

    1999. 11. 16 Revision No : 1 2/2

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