Scribd Logo
Upload

Welcome to Scribd!

  • 29 views

    KSR 1010

    Uploaded by

    Ghalielectrosoft Ges
    1. The KSR1010 is an NPN epitaxial silicon transistor intended for switching applications with a built-in bias resistor of 10 ohms. 2. It has absolute maximum ratings including a collector-base voltage of 40V, collector-emitter voltage of 40V, and collector current of 100mA. 3. Key electrical characteristics are a DC current gain of 100-600, collector-emitter saturation voltage below 0.3V, and current gain-bandwidth product of 250MHz minimum.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    KSR 1010

    Uploaded by

    Ghalielectrosoft Ges
    29 views3 pages
    1. The KSR1010 is an NPN epitaxial silicon transistor intended for switching applications with a built-in bias resistor of 10 ohms. 2. It has absolute maximum ratings including a collector-base voltage of 40V, collector-emitter voltage of 40V, and collector current of 100mA. 3. Key electrical characteristics are a DC current gain of 100-600, collector-emitter saturation voltage below 0.3V, and current gain-bandwidth product of 250MHz minimum.

    Original Title

    ksr1010

    Copyright

    © © All Rights Reserved

    Available Formats

    PDF, TXT or read online from Scribd

    Did you find this document useful?

    Is this content inappropriate?

    1. The KSR1010 is an NPN epitaxial silicon transistor intended for switching applications with a built-in bias resistor of 10 ohms. 2. It has absolute maximum ratings including a collector-base voltage of 40V, collector-emitter voltage of 40V, and collector current of 100mA. 3. Key electrical characteristics are a DC current gain of 100-600, collector-emitter saturation voltage below 0.3V, and current gain-bandwidth product of 250MHz minimum.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    29 views3 pages

    KSR 1010

    Uploaded by

    Ghalielectrosoft Ges
    1. The KSR1010 is an NPN epitaxial silicon transistor intended for switching applications with a built-in bias resistor of 10 ohms. 2. It has absolute maximum ratings including a collector-base voltage of 40V, collector-emitter voltage of 40V, and collector current of 100mA. 3. Key electrical characteristics are a DC current gain of 100-600, collector-emitter saturation voltage below 0.3V, and current gain-bandwidth product of 250MHz minimum.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 3

    KSR1010 NPN EPITAXIAL SILICON TRANSISTOR

    SWITCHING APPLICATION (Bias Resistor Built In)


    • Switching circuit, Inverter, Interface circuit, Driver Circuit TO-92
    • Built in bias Resistor (R=10 )Ï
    • Complement to KSR2010

    ABSOLUTE MAXIMUM RATINGS (TA=25 Î)


    Characteristic Symbol Rating Unit

    Collector-Base Voltage VCBO 40 V


    Collector-Emitter Voltage VCEO 40 V
    Emitter-Base Voltage VEBO 5 V
    Collector Current IC 100 mA
    Collector Dissipation PC 300 mW
    Junction Temperature TJ 150 Î
    Storage Temperature T STG -55 ~ 150 Î

    1. Emitter 2. Collector 3. Base

    ELECTRICAL CHARACTERISTICS (TA=25 Î)


    Characteristic Symbol Test Conditions Min Typ Max Unit

    Collector-Base Breakdown Voltage BVCBO À


    IC=100 , IE=0 40 V
    Collector-Emitter Breakdown Voltage BVCEO IE=1mA, IB=0 40 V
    Collector Cut-off Current ICBO VCB=30V, IE=0 0.1 À
    DC Current Gain hFE VCE=5V, IC=1mA 100 600
    Collector-Emitter Saturation Voltage VCE (sat) IC=10mA, IB=1mA 0.3 V
    Output Capacitance COB VCB=10V, IE=0 3.7 pF
    f=1MHz
    MHz
    Ï
    Current Gain-Bandwidth Product fT VCE=10V, IC=5mA 250
    Input Resistor R 7 10 13

    Equivalent Circuit

    Collector

    Base

    Emitter
    KSR1010 NPN EPITAXIAL SILICON TRANSISTOR
    KSR1010 NPN EPITAXIAL SILICON TRANSISTOR

    You might also like