TIP115/116/117

TIP115/116/117

Monolithic Construction With Built In Base-

Emitter Shunt Resistors
• High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -1A (Min.)
• Low Collector-Emitter Saturation Voltage
• Industrial Use
• Complementary to TIP110/111/112
1 TO-220

1.Base 2.Collector 3.Emitter

PNP Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted Equivalent Circuit
C
Symbol Parameter Value Units
VCBO Collector-Base Voltage : TIP115 - 60 V
: TIP116 - 80 V
: TIP117 - 100 V B

Collector-Emitter Voltage : TIP115 - 60 V

VCEO : TIP116 - 80 V
: TIP117 - 100 V
VEBO Emitter-Base Voltage -5 V R1 R2

IC Collector Current (DC) -2 A R 1 ≅ 10 k Ω E

ICP Collector Current (Pulse) -4 A R 2 ≅ 0.6 k Ω
IB Base Current (DC) - 50 mA
PC Collector Dissipation (Ta=25°C) 2 W
Collector Dissipation (TC=25°C) 50 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 65 ~ 150 °C

Electrical Characteristics TC=25°C unless otherwise noted

Symbol Parameter Test Condition Min. Max. Units
VCEO(sus) Collector-Emitter Sustaining Voltage
: TIP115 IC = -30mA, IB = 0 -60 V
: TIP116 -80 V
: TIP117 -100 V
ICEO Collector Cut-off Current
: TIP115 VCE = -30V, IB = 0 -2 mA
: TIP116 VCE = -40V, IB = 0 -2 mA
: TIP117 VCE = -50V, IB = 0 -2 mA
ICBO Collector Cut-off Current
: TIP115 VCB = -60V, IE = 0 -1 mA
: TIP116 VCB = -80V, IE = 0 -1 mA
: TIP117 VCB = -100V, IE = 0 -1 mA
IEBO Emitter Cut-off Current VBE = -5V, IC = 0 -2 mA
hFE DC Current Gain VCE = -4V,IC = -1A 1000
VCE = -4V, IC = -2A 500
VCE(sat) Collector-Emitter Saturation Voltage IC = -2A, IB = -8mA -2.5 V
VBE(on) Base-Emitter ON Voltage VCE = -4V, IC = -2A -2.8 V
Cob Output Capacitance VCB = -10V, IE = 0, f = 0.1MHz 200 pF

©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001

 TIP115/116/117
Typical Characteristics

-5 10k
IB = -1000 uA
V CE = -4V
IB = -900 uA
A
00 u
IC[A], COLLECTOR CURRENT

-4 IB = -800 uA -4
IB =

hFE, DC CURRENT GAIN

IB = -700 uA
IB = -600 uA IB = -300 uA 1k
-3 IB = -500 uA
IB = -200 uA

-2
IB = -100 uA 100

-1

-0 10
-0 -1 -2 -3 -4 -5 -0.01 -0.1 -1 -10

VCE[V], COLLECTOR-EMITTER VOLTAGE IC [A], COLLECTOR CURRENT

Figure 1. Static Characteristic Figure 2. DC current Gain

VBE(sat), VCE(sat)[V], SATURATION VOLTAGE

-100 1000

IC = 500 IB f = 0.1 MHz

Cob[pF], CAPACITANCE

-10 100

V BE(sat)
-1 10

V CE(sat)

-0.1 1
-0.01 -0.1 -1 -10 -0.01 -0.1 -1 -10 -100

IC[A], COLLECTOR CURRENT V CB[V], COLLECTOR-BASE VOLTAGE

Figure 3. Collector-Emitter Saturation Voltage Figure 4. Collector Output Capacitance

Base-Emitter Saturation Voltage

-10 80

70
IC[A], COLLECTOR CURRENT

PC[W], POWER DISSIPATION

60
1m
5m

50
s

DC
-1 40

30

20

TIP 115
10
TIP 116
TIP 117
-0.1 0
-1 -10 -100 0 25 50 75 100 125 150 175

VCE[V], COLLECTOR-EMITTER VOLTAGE o

TC[ C], CASE TEMPERATURE

Figure 5. Safe Operating Area Figure 6. Power Derating

©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001

 TIP115/116/117
Package Demensions

TO-220

1.30 ±0.10 9.90 ±0.20 4.50 ±0.20

(8.70)

2.80 ±0.10
(1.70)

+0.10
ø3.60 ±0.10 1.30 –0.05

18.95MAX.
(3.70)

15.90 ±0.20
9.20 ±0.20

(1.46)

(3.00)
(45°
)
(1.00)
13.08 ±0.20

10.08 ±0.30

1.27 ±0.10 1.52 ±0.10

0.80 ±0.10 +0.10

0.50 –0.05 2.40 ±0.20
2.54TYP 2.54TYP
[2.54 ±0.20] [2.54 ±0.20]

10.00 ±0.20

Dimensions in Millimeters

©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001

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PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

©2001 Fairchild Semiconductor Corporation Rev. H3