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    s8050 PDF

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    Ackerman Rincon
    The UTC S8050 is a small-signal NPN transistor designed for audio amplifiers and general purpose applications. It can handle collector currents up to 700mA and voltages up to 20V. Key features include high current capacity, compatibility with the complementary S8550 transistor, and performance suitable for Class B audio amplifiers. Electrical characteristics include an DC current gain of 100-400, saturation voltages below 1.5V, and a current gain bandwidth product of 100MHz.

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    s8050 PDF

    Uploaded by

    Ackerman Rincon
    147 views2 pages
    The UTC S8050 is a small-signal NPN transistor designed for audio amplifiers and general purpose applications. It can handle collector currents up to 700mA and voltages up to 20V. Key features include high current capacity, compatibility with the complementary S8550 transistor, and performance suitable for Class B audio amplifiers. Electrical characteristics include an DC current gain of 100-400, saturation voltages below 1.5V, and a current gain bandwidth product of 100MHz.

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    The UTC S8050 is a small-signal NPN transistor designed for audio amplifiers and general purpose applications. It can handle collector currents up to 700mA and voltages up to 20V. Key features include high current capacity, compatibility with the complementary S8550 transistor, and performance suitable for Class B audio amplifiers. Electrical characteristics include an DC current gain of 100-400, saturation voltages below 1.5V, and a current gain bandwidth product of 100MHz.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    147 views2 pages

    s8050 PDF

    Uploaded by

    Ackerman Rincon
    The UTC S8050 is a small-signal NPN transistor designed for audio amplifiers and general purpose applications. It can handle collector currents up to 700mA and voltages up to 20V. Key features include high current capacity, compatibility with the complementary S8550 transistor, and performance suitable for Class B audio amplifiers. Electrical characteristics include an DC current gain of 100-400, saturation voltages below 1.5V, and a current gain bandwidth product of 100MHz.

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    © All Rights Reserved
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    of 2

    UTC S8050 NPN EPITAXIAL SILICON TRANSISTOR

    LOW VOLTAGE HIGH CURRENT


    SMALL SIGNAL NPN
    TRANSISTOR

    DESCRIPTION
    The UTC S8050 is a low voltage high current small
    signal NPN transistor, designed for Class B push-pull
    audio amplifier and general purpose applications.
    1

    FEATURES
    *Collector current up to 700mA
    *Collector-Emitter voltage up to 20 V
    *Complementary to S8550 TO-92

    1:EMITTER 2:BASE 3: COLLECTOR

    ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified )


    PARAMETER SYMBOL VALUE UNIT
    Collector-Base Voltage VCBO 30 V
    Collector-Emitter Voltage VCEO 20 V
    Emitter-Base Voltage VEBO 5 V
    Collector Dissipation(Ta=25°C) Pc 1 W
    Collector Current Ic 700 mA
    Junction Temperature Tj 150 °C
    Storage Temperature TSTG -65 ~ +150 °C

    ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)


    PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
    Collector-Base Breakdown Voltage BVCBO Ic=100µA,IE=0 30 V
    Collector-Emitter Breakdown Voltage BVCEO Ic=1mA,IB=0 20 V
    Emitter-Base Breakdown Voltage BVEBO IE=100µA,Ic=0 5 V
    Collector Cut-Off Current ICBO VCB=30V,IE=0 1 µA
    Emitter Cut-Off Current IEBO VEB=5V,Ic=0 100 nA
    DC Current Gain(note) hFE1 VCE=1V,Ic=1mA 100
    hFE2 VCE=1V,Ic=150 mA 120 110 400
    hFE3 VCE=1V,Ic=500mA 40
    Collector-Emitter Saturation Voltage VCE(sat) Ic=500mA,IB=50mA 0.5 V
    Base-Emitter Saturation Voltage VBE(sat) Ic=500mA,IB=50mA 1.2 V
    Base-Emitter Saturation Voltage VBE VCE=1V,Ic=10mA 1.0 V
    Current Gain Bandwidth Product fT VCE=10V,Ic=50mA 100 MHz
    Output Capacitance Cob VCB=10V,IE=0 9.0 pF
    f=1MHz

    UTC UNISONIC TECHNOLOGIES CO., LTD. 1

    QW-R201-013,A
    UTC S8050 NPN EPITAXIAL SILICON TRANSISTOR

    CLASSIFICATION OF hFE2
    RANK C D E
    RANGE 120-200 160-300 280-400

    TYPICAL PERFORMANCE CHARACTERISTICS

    Fig.1 Static characteristics Fig.2 DC current Gain Fig.3 Base-Emitter on Voltage


    0.5 IB=3.0mA 3 2
    10 10

    IB=2.5mA VCE=1V
    Ic,Collector current (mA)

    Ic,Collector current (mA)


    0.4 VCE=1V
    HFE, DC current Gain

    IB=2.0mA 1
    2 10
    10
    0.3
    IB=1.5mA

    0.2
    IB=1.0mA
    1 0
    10 10

    0.1 IB=0.5mA

    0 0 -1
    10 10
    0 0.4 0.8 1.2 1.6 2.0 -1 0 1 2 3 0 0.2 0.4 0.6 0.8 1.0
    10 10 10 10 10

    Collector-Emitter voltage ( V) Ic,Collector current (mA) Base-Emitter voltage (V)

    Fig.5 Current gain-bandwidth Fig.6 Collector output


    Fig.4 Saturation voltage
    product Capacitance
    4 3 3
    10 10 10
    Ic=10*IB
    Cob,Capacitance (pF)

    VCE=10V
    Saturation voltage (mV)

    Current Gain-bandwidth

    VBE(sat)
    f=1MHz
    product,fT(MHz)

    3 2 2
    10 10 10 IE=0

    2 1 1
    10 10 10

    VCE(sat)

    1 0 0
    10 10 10
    -1 0 1 2 3 0 1 2 3 0 1 2 3
    10 10 10 10 10 10 10 10 10 10 10 10 10

    Ic,Collector current (mA) Ic,Collector current (mA) Collector-Base voltage (V)

    UTC UNISONIC TECHNOLOGIES CO., LTD. 2

    QW-R201-013,A

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