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    Silicon NPN Power Transistors

    Uploaded by

    Dai Jassir
    This document provides product specifications for the 2SC3856 silicon NPN power transistor. It is housed in a TO-3PN package and is intended for audio and general purpose applications. Key specifications include an absolute maximum collector-base voltage of 200V, collector current of 15A, and DC current gain ranging from 50-180 depending on the hFE class. Transition frequency is rated at a minimum of 20MHz.

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    Silicon NPN Power Transistors

    Uploaded by

    Dai Jassir
    28 views4 pages
    This document provides product specifications for the 2SC3856 silicon NPN power transistor. It is housed in a TO-3PN package and is intended for audio and general purpose applications. Key specifications include an absolute maximum collector-base voltage of 200V, collector current of 15A, and DC current gain ranging from 50-180 depending on the hFE class. Transition frequency is rated at a minimum of 20MHz.

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    datasheet (1)

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    This document provides product specifications for the 2SC3856 silicon NPN power transistor. It is housed in a TO-3PN package and is intended for audio and general purpose applications. Key specifications include an absolute maximum collector-base voltage of 200V, collector current of 15A, and DC current gain ranging from 50-180 depending on the hFE class. Transition frequency is rated at a minimum of 20MHz.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    28 views4 pages

    Silicon NPN Power Transistors

    Uploaded by

    Dai Jassir
    This document provides product specifications for the 2SC3856 silicon NPN power transistor. It is housed in a TO-3PN package and is intended for audio and general purpose applications. Key specifications include an absolute maximum collector-base voltage of 200V, collector current of 15A, and DC current gain ranging from 50-180 depending on the hFE class. Transition frequency is rated at a minimum of 20MHz.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 4

    JMnic Product Specification

    Silicon NPN Power Transistors 2SC3856

    DESCRIPTION
    ・With TO-3PN package
    ・Complement to type 2SA1492

    APPLICATIONS
    ・Audio and general purpose

    PINNING

    PIN DESCRIPTION

    1 Base

    Collector;connected to
    2
    mounting base
    Fig.1 simplified outline (TO-3PN) and symbol
    3 Emitter

    Absolute maximum ratings(Ta=℃)

    SYMBOL PARAMETER CONDITIONS VALUE UNIT

    VCBO Collector-base voltage Open emitter 200 V

    VCEO Collector-emitter voltage Open base 180 V

    VEBO Emitter-base voltage Open collector 6 V

    IC Collector current 15 A

    IB Base current 4 A

    PC Collector power dissipation TC=25℃ 130 W

    Tj Junction temperature 150 ℃

    Tstg Storage temperature -55~150 ℃


    JMnic Product Specification

    Silicon NPN Power Transistors 2SC3856

    CHARACTERISTICS
    Tj=25℃ unless otherwise specified

    SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

    V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0 180 V

    VCEsat Collector-emitter saturation voltage IC=5A ;IB=0.5A 2.0 V

    ICBO Collector cut-off current VCB=200V ;IE=0 100 μA

    IEBO Emitter cut-off current VEB=6V; IC=0 100 μA

    hFE DC current gain IC=3A ; VCE=4V 50 180

    COB Output capacitance IE=0 ; VCB=10V,f=1MHz 300 pF

    fT Transition frequency IC=0.5A ; VCE=12V 20 MHz

    Switching times

    ton Turn-on time 0.50 μs

    IC=10A;RL=4Ω
    ts Storage time IB1=- IB2=1A 1.80 μs
    VCC=40V

    tf Fall time 0.60 μs

    ‹ hFE Classifications

    O P Y

    50-100 70-140 90-180

    2
    JMnic Product Specification

    Silicon NPN Power Transistors 2SC3856

    PACKAGE OUTLINE

    Fig.2 outline dimensions (unindicated tolerance:±0.1mm)

    3
    JMnic Product Specification

    Silicon NPN Power Transistors 2SC3856

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