R

2N60
S E M I C O N D U C T O R 600V N-Channel Power MOSFET
FEATURES
PRODUCT SUMMARY
● RDS(ON)<4.4Ω @ VGS=10V,ID=1A
V DS (V) RDS(on) (Ω) ID (A)
● Fast switching capability
600 4.4 @ VGS =10V 2
● Lead free in compliance with EU RoHS directive.
● Improved dv/dt capability,high ruggedness TO-220AB ITO-220AB TO-263
2N60 2N60F 2N60D

MECHANICAL DATA
3
2

● Case:TO-220,ITO-220,TO-251,TO-252, 1

TO-262,TO-263 Package
1 2 3 1 2 3

Ordering Information
TO-262 TO-251 TO-252
2N60E 2N60N 2N60M
Part No. Package Packing
2N60-TU TO-220 50pcs / Tube
2N60F-TU ITO-220 50pcs / Tube
2N60E-TU TO-262 50pcs / Tube
2N60D-TU TO-263 50pcs / Tube
2N60D-TR TO-263 800pcs / 13"Reel Block Diagram
2N60N-TU TO-251 75pcs / Tube D
Pin Definition:
2N60M-TU TO-252 75pcs / Tube
2N60M-TR TO-252 2.5Kpcs / 13"Reel 1. Gate
2. Drain
3. Source G

ABSOLUTE MAXIMUM RATINGS (TC=25 C , unless otherwise specified)

S
PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage VDSS 600 V

Gate-Source Voltage VGSS 30 V

Continuous Drain Current ID 2.0 A

Pulsed Drain Current (Note 2) IDM 8.0 A

Avalanche Energy EAS 115 mJ

TO-220/TO-263/TO-262 44

Power Dissipation ITO-220 PD 23 W

TO-251/TO-252 34

Junction Temperature TJ +150 C

Storage Temperature TSTG -55 ~ +150 C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L=30mH, IAS=2.7A,VDD=50V,RG=25Ω,Starting TJ=25 C

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2N60
600V N-Channel Power MOSFET
THERMAL DATA
PARAMETER SYMBOL RATING UNIT
TO-220/ITO-220
62.5
Junction to Ambient TO-262/TO-263 θJA C /W
TO-251/TO-252 110
TO-220/TO-263/TO-262 2.35
Junction to Case ITO-220 θJC 5.5 C /W

TO-251/TO-252 2.9

ELECTRICAL CHARACTERISTICS (TC=25 C , unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT

OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BVDSS VGS=0V,ID=250μA 600 V

Drain-Source Leakage Current IDSS VDS=600V,VGS=0V 10 μA

Forward VG=30V,VDS=0V 100 nA

Gate- Source Leakage Current IGSS
Reverse VGS=-30V,VDS=0V -100 nA

ON CHARACTERISTICS
Gate Threshold Voltage VGS(TH) VDS=VGS,ID=250μA 2.0 4.0 V
Static Drain-Source On-State Resistance RDS(ON) VGS=10V,ID=1.0A 4 4.4 Ω
Ω
DYNAMIC CHARACTERISTICS
Input Capacitance CISS 300 pF
Output Capacitance COSS VDS=25V,VGS=0V,f=1MHz 45 pF
Reverse Transfer Capacitance CRSS 2 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time tD(ON) 10 ns
Turn-On Rise Time tR VDD=300V,ID=2A, 25 ns
Turn-Off Delay Time tD(OFF) RG=25Ω(Note1,2) 20 ns
Turn-Off Fall Time tF 25 ns
Total Gate Charge QG 5.7 nC
VDS=480V,ID=2.4A,
Gate-Source Charge QGS VGS=10V(Note1,2) 1.8 nC
Gate-Drain Charge QGD 2 nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage VSD VGS=0V,IS=2.0A 1.4 V
Maximum Continuous Drain-Source Diode
IS 2.0 A
Forward Current
Maximum Pulsed Drain-Source Diode
ISM 8.0 A
Forward Current
Reverse Recovery Time trr VGS=0V,IS=2A 357 ns
Reverse Recovery Charge QRR dIF/dt=100A/μs(Note 1) 2 μC
Notes: 1. Pulse Test: Pulse width ≤300μS,Duty cycle≤2%.
2. Essentially independent of operating temperature.

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2N60
600V N-Channel Power MOSFET
TEST CIRCUITS AND WAVEFORMS

D.U.T. +

VDS

- L

RG
Driver VDD
* dv/dt controlled by RG
Same Type * SD controlled by pulse period
VGS as D.U.T. * D.U.T.-D vice Under Test

Peak Diode Recovery dv/dt Test Circuit

VGS Period P. W.
D=
(Driver) P.W. Period

VGS=10V

IFM, Body Diode Forward Current

ISD
(D.U.T.)
di/dt

IRM

Body Diode Reverse Current

Body Diode Recovery dv/dt

VDS
(D.U.T.) VDD

Body Diode Forward Voltage Drop

Peak Diode Recovery dv/dt Waveforms

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2N60
600V N-Channel Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)

Switching Test Circuit Switching Waveforms

Gate Charge Test Circuit Gate Charge Waveform

BVDSS
IAS

ID(t)
V DS(t)
VDD

tp Time
Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms

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2N60
600V N-Channel Power MOSFET
TYPICAL CHARACTERISTICS

Drain Current vs. Drain-Source

Drain Current vs. Gate Threshold Voltage
Breakdown Voltage
300 300

250 250
Drain Current, ID (μA)

Drain Current, ID (ΜA)

200 200

150 150

100 100

50 50

0 0
0 200 400 600 800 1000 0 0.5 1 1.5 2 2.5 3 3.5 4
Drain-Source Breakdown Voltage, BVDSS (V) Gate Threshold Voltage, VTH (V)
Continuous Drain-Source Current, ISD (A)
Drain Current, ID (A)

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2N60
600V N-Channel Power MOSFET
TO-220AB
0.192(4.87)
0.416(10.57) 0.163(4.14) 0.168(4.27)
0.377(9.57) 0.139(3.54)
DIA 0.058(1.47)
0.042(1.07)
0.116(2.94)
0.100(2.54) 0.283(7.20)
0.228(5.80)
0.622(15.80)
0.583(14.80)

PIN
1 2 3

0.159(4.05)
0.115(2.92)
0.116(2.95)
0.080(2.03)
0.560(14.22)
0.062(1.57) 0.500(12.70)
0.038(0.97)
0.044(1.11)
0.020(0.51)

0.108(2.74)
0.092(2.34) 0.025(0.64)
0.012(0.30)
0.208(5.28)
0.192(4.88)

ITO-220AB
0.191(4.84)
0.167(4.25)
0.413(10.50) 0.150(3.80)
0.374(9.50) 0.126(3.20)
DIA 0.130(3.31)
0.099(2.52)
0.114(2.90)
0.098(2.50) 0.287(7.30)
0.248(6.30)
0.610(15.50)
0.571(14.50)

PIN
1 2 3

0.177(4.50)
0.110(2.80)
0.130(3.30)
0.102(2.60)
0.551(14.00)
0.067(1.70)
0.512(13.00)
0.059(1.50) 0.059(1.50)
0.035(0.90)
0.035(0.90)
0.012(0.30)
0.108(2.75)
0.029(0.73)
0.093(2.35)
0.019(0.47)

TO-263
0.420(10.67)
0.380(9.65) 0.190(4.83)
0.160(4.06)
0.245(6.22)
MIN 0.058(1.47)
0.042(1.07)

0.066(1.68)
0.036(0.92)
0.362(9.20)
0.639(16.22)
0.320(8.13)
1 K 2 0.560(14.22)

0.053(1.34)
0.047(1.20) 0.131(3.32)
0.083(2.10) 0.018(0.46)
0.095(2.41)
0.134(3.40) 0.012(0.30)
0.083(2.10) 0.040(1.01)
0.024(0.61) 0.105(2.67)

Dimensions in inches and (millimeters)

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2N60
600V N-Channel Power MOSFET

TO-252
(DPAK)
0.268(6.80)
0.104(2.65)
0.244(6.20)
0.218(5.53) 0.085(2.15)

0.200(5.10) 0.024(0.61)
0.017(0.42)

0.050(1.27)
0.035(0.88)
0.248(6.30)
0.285(7.25)
0.220(5.60)
1 K 2 0.270(6.85)

0.130(3.30)
0.114(2.90) 0.039(1.00)
MIN. 0.024(0.61)
0.094(2.40)
0.034(0.86) 0.017(0.42)
0.084(2.14)
0.018(0.46)

Dimensions in inches and (milimeters)

TO-251
0.094(2.4)
0.268(6.8)
0.087(2.2)
0.252(6.4)

0.218(5.53) 0.024(0.61)
0.202(5.13) 0.016(0.41)

0.248(6.30) 0.285(7.25)
0.232(5.90) 0.270(6.85)

1 2 3 0.052(1.31)
0.028(0.71)

0.033(0.85) 0.171(4.35)
0.018(0.45) 0.156(3.95)
0.024(0.61)
0.016(0.41)

0.094(2.39)
0.086(2.19)

Dimensions in inches and (milimeters)

TO-262
0.192(4.87)
0.416(10.57)
0.168(4.27)
0.377(9.57)
0.058(1.47)
0.072(1.84) 0.042(1.07)
0.057(1.44)

0.439(11.14)
0.399(10.14)

1 2 3
0.062(1.57) 0.156(3.95)
0.038(0.97) 0.116(2.95)
0.018(0.46)
0.012(0.3)

0.528(13.4)
0.500(12.7)
0.044(1.11)
0.020(0.51) 0.115(2.92)
0.080(2.03)

0.108(2.74)
0.092(2.34)

Dimensions in inches and (milimeters)

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