30TPS...

PbF High Voltage Series

Vishay High Power Products

Phase Control SCR, 20 A

DESCRIPTION/FEATURES
2
(A) The 30TPS...PbF High Voltage Series of silicon
Pb-free
controlled rectifiers are specifically designed for Available

medium power switching and phase control RoHS*

applications. The glass passivation technology COMPLIANT

used has reliable operation up to 125 °C junction

1 (K) (G) 3
temperature.
TO-247AC
Typical applications are in input rectification (soft start) and
these products are designed to be used with Vishay HPP
PRODUCT SUMMARY
input diodes, switches and output rectifiers which are
VT at 20 A < 1.3 V
available in identical package outlines.
ITSM 300 A
This product has been designed and qualified for industrial
VRRM 800/1200 V
level and lead (Pb)-free (“PbF” suffix).

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS
IT(AV) Sinusoidal waveform 20
A
IRMS 30
VRRM/VDRM 800/1200 V
ITSM 300 A
VT 20 A, TJ = 25 °C 1.3 V
dV/dt 500 V/µs
dI/dt 150 A/µs
TJ - 40 to 125 °C

VOLTAGE RATINGS
VRRM/VDRM, MAXIMUM VRSM, MAXIMUM
IRRM/IDRM
REPETITIVE PEAK AND NON-REPETITIVE PEAK
PART NUMBER AT 125 °C
OFF-STATE VOLTAGE REVERSE VOLTAGE
mA
V V

30TPS08PbF 800 900

10
30TPS12PbF 1200 1300

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 94386 For technical questions, contact: [email protected] www.vishay.com

Revision: 06-Jun-08 1
30TPS...PbF High Voltage Series
Vishay High Power Products Phase Control SCR, 20 A

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current IT(AV) TC = 95 °C, 180° conduction half sine wave 20
Maximum RMS on-state current IRMS 30
A
Maximum peak, one-cycle 10 ms sine pulse, rated VRRM applied 250
ITSM
non-repetitive surge current 10 ms sine pulse, no voltage reapplied 300
10 ms sine pulse, rated VRRM applied 310
Maximum I2t for fusing I2 t A2s
10 ms sine pulse, no voltage reapplied 442
Maximum I2√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 4420 A2√s
Maximum on-state voltage drop VTM 20 A, TJ = 25 °C 1.3 V
On-state slope resistance rt 12 mΩ
TJ = 125 °C
Threshold voltage VT(TO) 1.0 V
TJ = 25 °C 0.5
Maximum reverse and direct leakage current IRM/IDM VR = Rated VRRM/VDRM
TJ = 125 °C 10
mA
Maximum holding current IH Anode supply = 6 V, resistive load, initial IT = 1 A 100
Maximum latching current IL Anode supply = 6 V, resistive load 200
Maximum rate of rise of off-state voltage dV/dt 500 V/µs
Maximum rate of rise of turned-on current dI/dt 150 A/µs

TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power PGM 8.0
W
Maximum average gate power PG(AV) 2.0
Maximum peak positive gate current + IGM 1.5 A
Maximum peak negative gate voltage - VGM 10 V
Anode supply = 6 V, resistive load, TJ = - 10 °C 60
Maximum required DC gate current to trigger IGT Anode supply = 6 V, resistive load, TJ = 25 °C 45 mA
Anode supply = 6 V, resistive load, TJ = 125 °C 20
Anode supply = 6 V, resistive load, TJ = - 10 °C 2.5
Maximum required DC gate
VGT Anode supply = 6 V, resistive load, TJ = 25 °C 2.0
voltage to trigger V
Anode supply = 6 V, resistive load, TJ = 125 °C 1.0
Maximum DC gate voltage not to trigger VGD 0.25
TJ = 125 °C, VDRM = Rated value
Maximum DC gate current not to trigger IGD 2.0 mA

SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Typical turn-on time tgt TJ = 25 °C 0.9
Typical reverse recovery time trr 4 µs
TJ = 125 °C
Typical turn-off time tq 110

www.vishay.com For technical questions, contact: [email protected] Document Number: 94386

2 Revision: 06-Jun-08
 30TPS...PbF High Voltage Series
Phase Control SCR, 20 A Vishay High Power Products

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
TJ, TStg - 40 to 125 °C
temperature range
Maximum thermal resistance,
RthJC 0.8
junction to case
DC operation
Maximum thermal resistance,
RthJA 40 °C/W
junction to ambient
Maximum thermal resistance,
RthCS Mounting surface, smooth and greased 0.2
case to heatsink
6 g
Approximate weight
0.21 oz.
minimum 6 (5) kgf · cm
Mounting torque
maximum 12 (10) (lbf · in)

30TPS08
Marking device Case style TO-247AC (JEDEC)
30TPS12

Document Number: 94386 For technical questions, contact: [email protected] www.vishay.com

Revision: 06-Jun-08 3
30TPS...PbF High Voltage Series
Vishay High Power Products Phase Control SCR, 20 A

130 80

Maximum Average On-state Power Loss (W)

Maximum Allowable Case Temperature (°C)

30TPS.. Series DC
R thJC (DC) = 0.8 °C/ W 180°
120°
120 60 90°
60°
30°
Conduction Angle
110 40 RMS Limit

30°
60° Conduction Period
90°
100 120° 20
180° 30TPS.. Series
TJ = 125°C

90 0
0 5 10 15 20 25 0 10 20 30 40 50

Average On-state Current (A) Average On-state Current (A)

Fig. 1 - Current Rating Characteristics Fig. 4 - On-State Power Loss Characteristics

130 280
Maximum Allowable Case Temperature (°C)

Peak Half Sine Wave On-state Current (A)

30TPS.. Series At Any Rated Load Condition And With
RthJC (DC) = 0.8 °C/ W Rated V RRM Applied Following Surge.
260
Initial TJ = 125°C
120
240 @ 60 Hz 0.0083 s
@50 Hz 0.0100 s

110 220
Conduction Period

200
100
180

30° 160
60°
90 90°
120° 140 30TPS.. Series
180° DC
80 120
0 5 10 15 20 25 30 35 1 10 100
Average On-state Current (A) Numb er Of Equa l Amplitude Ha lf Cyc le Current Pulses (N)

Fig. 2 - Current Rating Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current

60 300
Maximum Average On-state Power Loss (W)

Peak Half Sine Wave On-state Current (A)

180° Maximum Non Repetitive Surge Current

120° 280 Versus Pulse Tra in Duration. Control
50 90° Of Conduc tion May Not Be Ma intained.
60° 260 Initial TJ= 125°C
30° No Voltage Reapplied
40 240 Rated VRRMReapplied
RMS Limit
220
30
200

20 180
Conduction Angle
160
10 30TPS.. Series
TJ= 125°C 140 30TPS.. Series

0 120
0 5 10 15 20 25 30 0.01 0.1 1
Average On-state Current (A) Pulse Train Duration (s)
Fig. 3 - On-State Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current

www.vishay.com For technical questions, contact: [email protected] Document Number: 94386

4 Revision: 06-Jun-08
 30TPS...PbF High Voltage Series
Phase Control SCR, 20 A Vishay High Power Products

1000

Instantaneous On-state Current (A)

TJ= 25°C

TJ= 125°C
100

10

30TPS.. Series
1
0 1 2 3 4 5 6 7
Instantaneous On-state Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
Transient Thermal Impedance Z thJC (°C/ W)

D = 0.50 Steady State Value

D = 0.33 (DC Operation)
D = 0.25
D = 0.17
0.1 D = 0.08

Single Pulse

30TPS.. Series

0.01
0.0001 0.001 0.01 0.1 1
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristics

100
Rec tangular gate p ulse (1) PGM = 40 W, tp = 1 ms
a )Rec ommend ed loa d line for
(2) PGM = 20 W, tp = 2 ms
Instantaneous Gate Voltage (V)

rated di/ dt: 10 V, 20 ohms

tr = 0.5 µs, tp >= 6 µs
(3) PGM = 8 W, tp = 5 ms
b)Recommend ed load line for (4) PGM = 4 W, tp = 10 ms
<= 30% rated di/ dt: 10 V, 65 ohms
10 tr = 1 µs, tp >= 6 µs
(a )
(b )
TJ = -10 °C
TJ = 25 °C
TJ = 125 °C

1
(4) (3) (2) (1)
VGD

IGD
30TPS.. Series Frequency Limited by PG(AV)
0.1
0.001 0.01 0.1 1 10 100
Instantaneous Gate Current (A)
Fig. 9 - Gate Characteristics

Document Number: 94386 For technical questions, contact: [email protected] www.vishay.com

Revision: 06-Jun-08 5
30TPS...PbF High Voltage Series
Vishay High Power Products Phase Control SCR, 20 A

ORDERING INFORMATION TABLE

Device code 30 T P S 12 PbF

1 2 3 4 5 6

1 - Current rating (30 = 30 A)

2 - Circuit configuration:
T = Thyristor
3 - Package:
P = TO-247
4 - Type of silicon:
S = Standard recovery rectifier
08 = 800 V
5 - Voltage code x 100 = VRRM
12 = 1200 V
6 - None = Standard production
PbF = Lead (Pb)-free

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95223
Part marking information http://www.vishay.com/doc?95226

www.vishay.com For technical questions, contact: [email protected] Document Number: 94386

6 Revision: 06-Jun-08
 Outline Dimensions
www.vishay.com
Vishay Semiconductors
DIMENSIONS in millimeters and inches

A A
(3)
E (6) Ø P (Datum B)
B
N S A2 Ø K M DBM
(2) R/2 FP1
A
D2
Q

2xR
D D1 (4)
(2)

1 2 3 D 4
Thermal pad
(5) L1

C L (4)
E1
See view B A
0.01 M D B M
2 x b2 C View A - A
2x e
3xb
b4 A1
0.10 M C A M

(b1, b3, b5) Lead assignments

Planting Base metal
Diodes
D DE E
1. - Anode/open
2. - Cathode
(c) c1 C C 3. - Anode

(b, b2, b4)

(4)
Section C - C, D - D, E - E View B

MILLIMETERS INCHES MILLIMETERS INCHES

SYMBOL NOTES SYMBOL NOTES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
A 4.65 5.31 0.183 0.209 D2 0.51 1.30 0.020 0.051
A1 2.21 2.59 0.087 0.102 E 15.29 15.87 0.602 0.625 3
A2 1.50 2.49 0.059 0.098 E1 13.72 - 0.540 -
b 0.99 1.40 0.039 0.055 e 5.46 BSC 0.215 BSC
b1 0.99 1.35 0.039 0.053 FK 2.54 0.010
b2 1.65 2.39 0.065 0.094 L 14.20 16.10 0.559 0.634
b3 1.65 2.37 0.065 0.094 L1 3.71 4.29 0.146 0.169
b4 2.59 3.43 0.102 0.135 N 7.62 BSC 0.3
b5 2.59 3.38 0.102 0.133 P 3.56 3.66 0.14 0.144
c 0.38 0.86 0.015 0.034 P1 - 6.98 - 0.275
c1 0.38 0.76 0.015 0.030 Q 5.31 5.69 0.209 0.224
D 19.71 20.70 0.776 0.815 3 R 4.52 5.49 1.78 0.216
D1 13.08 - 0.515 - 4 S 5.51 BSC 0.217 BSC
Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7) Outline conforms to JEDEC outline TO-247 with exception of dimension c

Revision: 16-Jun-11 1 Document Number: 95223

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Revision: 11-Mar-11 1