VS-10ETS...PbF Series, VS-10ETS...

M3 Series
www.vishay.com
Vishay Semiconductors
High Voltage, Input Rectifier Diode, 10 A
FEATURES
Base • Very low forward voltage drop
cathode
2 • 150 °C max. operating junction temperature
• Designed and qualified according to
JEDEC-JESD47
• Material categorization:
1 3 For definitions of compliance please see
Cathode Anode www.vishay.com/doc?99912
TO-220AC Available

APPLICATIONS
• Input rectification
PRODUCT SUMMARY
• Vishay Semiconductors switches and output rectifiers
Package TO-220AC
which are available in identical package outlines
IF(AV) 10 A
VR 800 V to 1200 V DESCRIPTION
VF at IF 1.1 V High voltage rectifiers optimized for very low forward
IFSM 160 A voltage drop with moderate leakage.
TJ max. 150 °C These devices are intended for use in main rectification
Diode variation Single die (single or three phase bridge).

OUTPUT CURRENT IN TYPICAL APPLICATIONS

APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS
Capacitive input filter TA = 55 °C, TJ = 125 °C 
12.0 16.0 A
common heatsink of 1 °C/W

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VALUES UNITS
IF(AV) Sinusoidal waveform 10 A
VRRM 800/1200 V
IFSM 160 A
VF 10 A, TJ = 25 °C 1.1 V
TJ - 40 to 150 °C

VOLTAGE RATINGS
VRRM, MAXIMUM PEAK VRSM, MAXIMUM NON-REPETITIVE IRRM
PART NUMBER REVERSE VOLTAGE PEAK REVERSE VOLTAGE AT 150 °C
V V mA
VS-10ETS08PbF, VS-10ETS08-M3 800 900
0.5
VS-10ETS12PbF, VS-10ETS12-M3 1200 1300

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current IF(AV) TC = 105 °C, 180° conduction half sine wave 10
Maximum peak one cycle  10 ms sine pulse, rated VRRM applied 135 A
IFSM
non-repetitive surge current 10 ms sine pulse, no voltage reapplied 160
10 ms sine pulse, rated VRRM applied 91
Maximum I2t for fusing I2t A2s
10 ms sine pulse, no voltage reapplied 130
Maximum I2t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 1300 A2s

Revision: 18-Jun-13 1 Document Number: 94337

For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 VS-10ETS...PbF Series, VS-10ETS...M3 Series
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Vishay Semiconductors

ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop VFM 10 A, TJ = 25 °C 1.1 V
Forward slope resistance rt 20 m
TJ = 150 °C
Threshold voltage VF(TO) 0.82 V
TJ = 25 °C 0.05
Maximum reverse leakage current IRM VR = Rated VRRM mA
TJ = 150 °C 0.50

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage temperature range TJ, TStg - 40 to 150 °C
Maximum thermal resistance, junction to case RthJC DC operation 2.5
Maximum thermal resistance, junction to ambient  °C/W
RthJA 62
(PCB mount)
Soldering temperature TS 240 °C
2 g
Approximate weight
0.07 oz.
10ETS08
Marking device Case style TO-220AC
10ETS12






150 150
10ETS.. Series 10ETS.. Series
RthJC (DC) = 2.5 °C/W RthJC(DC) = 2.5 °C/W
140
140
Case Temperature (°C)

Case Temperature (°C)

Maximum Allowable

Maximum Allowable

130
Ø 130 Ø
Conduction angle Conduction period
120
120
110
110 DC
100
60° 90° 180°
90 30° 100 120°
30° 60°
120° 90° 180°
80 90
0 2 4 6 8 10 12 0 2 4 6 8 10 12 14 16 18

Average Forward Current (A) Average Forward Current (A)

Fig. 1 - Current Rating Characteristics
Fig. 2 - Current Rating Characteristics

Revision: 18-Jun-13 2 Document Number: 94337

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 VS-10ETS...PbF Series, VS-10ETS...M3 Series
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Vishay Semiconductors
16 150
180° At any rated load condition and with
140
14 120° rated Vrrm applied following surge.
Forward Power Loss (W)

90° 130 Initial Tj = 150°C

Peak Half Sine Wave

at 60 Hz 0.0083s

Forward Current (A)

12 60° 120
Maximum Average

30° at 50 Hz 0.0100s
110
10
100
RMS limit
8 90
80
6
70
Ø
4 Conduction angle 60
50
2 10ETS.. Series VS-10ETS.. Series
TJ = 150 °C 40
0 30
0 2 4 6 8 10 1 10 100

Average Forward Current (A) Number of Equal Amplitude

Half Cycle Current Pulses (N)
Fig. 3 - Forward Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current

20 180
DC Maximum non-repetitive surge current
18 180° 160 versus pulse train duration.
120°
Forward Power Loss (W)

16 Initial Tj = Tj max.
140
Peak Half Sine Wave
90° Forward Current (A) No voltage reapplied
Maximum Average

14 60° Rated Vrrm reapplied

120
30°
12
100
10
80
8
Ø 60
6 Conduction period
40
4 10ETS.. Series
RMS limit TJ = 150 °C 20 VS-10ETS.. Series
2
0 0
0 2 4 6 8 10 12 14 16 0.01 0.1 1 10

Average Forward Current (A) Pulse Train Duration (s)

Fig. 4 - Forward Power Loss Characteristics Fig. 6 - Maximum Non-Repetitve Surge Current

100
Instantaneous Forward Current (A)

TJ = 25 °C

TJ = 150 °C

10

10ETS.. Series

1
0 0.5 1.0 1.5 2.0 2.5 3.0

Instantaneous Forward Voltage (V)

Fig. 7 - Forward Voltage Drop Characteristics

Revision: 18-Jun-13 3 Document Number: 94337

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 VS-10ETS...PbF Series, VS-10ETS...M3 Series
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Vishay Semiconductors
10
Steady state value
Thermal Impedance (°C/W)
(DC operation)
ZthJC - Transient

1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
Single pulse D = 0.08
10ETS.. Series

0.1
0.0001 0.001 0.01 0.1 1 10
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristics

ORDERING INFORMATION TABLE

Device code VS- 10 E T S 12 PbF

1 2 3 4 5 6 7

1 - Vishay Semiconductors product

2 - Current rating (10 = 10 A)
3 - Circuit configuration:
E = Single diode
4 - Package:
T = TO-220AC
5 - Type of silicon:
S = Standard recovery rectifier
08 = 800 V
6 - Voltage code x 100 = VRRM 12 = 1200 V
7 - Environmental digit:
PbF = Lead (Pb)-free and RoHS compliant
-M3 = Halogen-free, RoHS compliant and terminations lead (Pb)-free

ORDERING INFORMATION (Example)

PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-10ETS08PbF 50 1000 Antistatic plastic tubes
VS-10ETS08-M3 50 1000 Antistatic plastic tubes
VS-10ETS12PbF 50 1000 Antistatic plastic tubes
VS-10ETS12-M3 50 1000 Antistatic plastic tubes

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95221
TO-220AC PbF www.vishay.com/doc?95224
Part marking information
TO-220AC -M3 www.vishay.com/doc?95068

Revision: 18-Jun-13 4 Document Number: 94337

For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 Outline Dimensions
Vishay Semiconductors

TO-220AC

DIMENSIONS in millimeters and inches

B
Seating 1 2 3
(6) A plane
E D D
ØP A A L1
E2 (7) 0.014 M B A M A1 E C C
Thermal pad
Q
(6)
H1 H1
(7)
D2 (6) 2 x b2 2xb
(6) D Detail B
Detail B
θ
D1

1 2 3 Lead tip
L3
C
E1 (6)
L4 Lead assignments
L Diodes
1 + 2 - Cathode
3 - Anode

c A Conforms to JEDEC outline TO-220AC

e1 View A - A
A2
0.015 M B A M

MILLIMETERS INCHES MILLIMETERS INCHES

SYMBOL NOTES SYMBOL NOTES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
A 4.25 4.65 0.167 0.183 E1 6.86 8.89 0.270 0.350 6
A1 1.14 1.40 0.045 0.055 E2 - 0.76 - 0.030 7
A2 2.56 2.92 0.101 0.115 e 2.41 2.67 0.095 0.105
b 0.69 1.01 0.027 0.040 e1 4.88 5.28 0.192 0.208
b1 0.38 0.97 0.015 0.038 4 H1 6.09 6.48 0.240 0.255 6, 7
b2 1.20 1.73 0.047 0.068 L 13.52 14.02 0.532 0.552
b3 1.14 1.73 0.045 0.068 4 L1 3.32 3.82 0.131 0.150 2
c 0.36 0.61 0.014 0.024 L3 1.78 2.13 0.070 0.084
c1 0.36 0.56 0.014 0.022 4 L4 0.76 1.27 0.030 0.050 2
D 14.85 15.25 0.585 0.600 3 ØP 3.54 3.73 0.139 0.147
D1 8.38 9.02 0.330 0.355 Q 2.60 3.00 0.102 0.118
D2 11.68 12.88 0.460 0.507 6  90° to 93° 90° to 93°
E 10.11 10.51 0.398 0.414 3, 6
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Lead dimension and finish uncontrolled in L1
(3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured
at the outermost extremes of the plastic body
(4) Dimension b1, b3 and c1 apply to base metal only
(5) Controlling dimension: inches
(6) Thermal pad contour optional within dimensions E, H1, D2 and E1
(7) Dimension E2 x H1 define a zone where stamping and singulation irregularities are allowed
(8) Outline conforms to JEDEC TO-220, D2 (minimum) where dimensions are derived from the actual package outline

Document Number: 95221 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 07-Mar-11 [email protected], [email protected], [email protected] 1
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Material Category Policy

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.

Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.

Revision: 02-Oct-12 1 Document Number: 91000