New Product

VSIB4A20 thru VSIB4A80

Vishay General Semiconductor

Single-Phase Single In-Line Bridge Rectifier

FEATURES
• UL recognition file number E312394
(QQQX2)
• Ideal for printed circuit boards
• High surge current capability
- • High case dielectric strength of 1500 VRMS
~ + ~ ~ -
~ • Solder dip 260 °C, 40 s
+
• Compliant to RoHS directive 2002/95/EC and in
Case Style GSIB-3S
accordance to WEEE 2002/96/EC

TYPICAL APPLICATIONS
General purpose use in ac-to-dc bridge full wave
rectification for monitor, TV, printer, switching mode
power supply, adapter, audio equipment, and home
PRIMARY CHARACTERISTICS
appliances applications.
IF(AV) 4.0 A
VRRM 200 V to 800 V MECHANICAL DATA
IFSM 80 A Case: GSIB-3S
IR 5 µA Epoxy meets UL 94 V-0 flammability rating
VF 1.0 V Terminals: Matte tin plated leads, solderable per
TJ max. 150 °C J-STD-002 and JESD 22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Mounting Torque: 10 cm-kg (8.8 inches-lbs) max.
Recommended Torque: 5.7 cm-kg (5 inches-lbs)

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL VSIB4A20 VSIB4A40 VSIB4A60 VSIB4A80 UNIT
Maximum repetitive peak reverse voltage VRRM 200 400 600 800 V
Maximum RMS voltage VRMS 140 280 420 560 V
Maximum DC blocking voltage VDC 200 400 600 800 V
Maximum average forward TC = 100 °C 4.0 (1)
IF(AV) A
rectified output current at TA = 25 °C 2.3 (2)
Peak forward surge current single sine-wave
IFSM 80 A
superimposed on rated load
Rating for fusing (t < 8.3 ms) I2t 32 A2 s
Operating junction and storage temperature range TJ, TSTG - 55 to + 150 °C

Notes
(1) Unit case mounted on aluminum plate heatsink
(2)
Units mounted on P.C.B. with 0.5" x 0.5" (12 mm x 12 mm) copper pads and 0.375" (9.5 mm) lead length

Document Number: 89120 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 14-Jul-09 [email protected], [email protected], [email protected] 1
 New Product
VSIB4A20 thru VSIB4A80
Vishay General Semiconductor

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER TEST CONDITIONS SYMBOL VSIB4A20 VSIB4A40 VSIB4A60 VSIB4A80 UNIT
Maximum instantaneous
IF = 2.0 A TA = 25 °C VF 1.0 V
forward drop per diode (1)

Maximum reverse current TA = 25 °C 5.0

Rated VR IR µA
per diode (2) TA = 125 °C 200

Notes
(1)
Pulse test: 300 µs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width ≤ 40 ms

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL VSIB4A20 VSIB4A40 VSIB4A60 VSIB4A80 UNIT
RθJA (2)
26
Maximum thermal resistance °C/W
RθJC 5 (1)

Notes
(1)
Unit case mounted on aluminum plate heatsink
(2)
Units mounted on P.C.B. with 0.5" x 0.5" (12 mm x 12 mm) copper pads and 0.375" (9.5 mm) lead length
(3)
Recommended mounting position is to bolt down on heatsink with silicone thermal compound for maximum heat transfer with #6 screw

ORDERING INFORMATION (Example)

PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
VSIB4A60-E3/45 4.0 45 20 Tube

RATINGS AND CHARACTERISTICS CURVES

(TA = 25 °C unless otherwise noted)

4 100
Average Forward Output Current (A)

Heatsink Mounting, TC
Peak Forward Surge Current (A)

80
3

60
2
40
P.C.B. Mounting, TA
1
20
1.0 Cycle

0 0
0 25 50 75 100 125 150 1 10 100
Temperature (°C) Number of Cycles at 60 Hz
Figure 1. Derating Curve Output Rectified Current Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode

www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 89120
2 [email protected], [email protected], [email protected] Revision: 14-Jul-09
 New Product
VSIB4A20 thru VSIB4A80
Vishay General Semiconductor

100 1000
Instantaneous Forward Current (A)

Junction Capacitance (pF)

10
TJ = 150 °C 100

1 TJ = 25 °C

10
0.1

TJ = 125 °C

0.01 1
0.3 0.5 0.7 0.9 1.1 1.3 0.1 1 10 100
Instantaneous Forward Voltage (V) Reverse Voltage (V)
Figure 3. Typical Forward Characteristics Per Diode Figure 5. Typical Junction Capacitance Per Diode

1000 100

Transient Thermal Impedance (°C/W)

Instantaneous Reverse Current (µA)

TJ = 150 °C
100

TJ = 125 °C 10
10

1
1

0.1
TJ = 25 °C

0.01 0.1
20 30 40 50 60 70 80 90 100 0.01 0.1 1 10 100
Percent of Rated Peak Reverse Voltage (%) t - Heating Time (s)
Figure 4. Typical Reverse Characteristics Per Diode Figure 6. Typical Transient Thermal Impedance Per Diode

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

Case Style GSIB-3S
0.996 (25.3) 0.189 (4.80)
0.972 (24.7) 0.173 (4.40)

0.150 (3.80)
0.134 (3.40)

Ø 0.134 (3.40)
0.602 (15.3) Ø 0.122 (3.10)
0.579 (14.7) 0.382 (9.70)
0.366 (9.30)
0.157 (4.0) Ref.
0.057 (1.45)
0.114 (2.90)
0.041 (1.05)
0.146 (3.70) 0.098 (2.50)
0.075 (1.90)
0.130 (3.30) 0.709 (18.0)
0.059 (1.50)
0.083 (2.10) 0.669 (17.0)
0.067 (1.70)
0.031 (0.80)
0.043 (1.10)
0.024 (0.60)
0.035 (0.90) 0.303 (7.7)
0.287 (7.3)

Document Number: 89120 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 14-Jul-09 [email protected], [email protected], [email protected] 3
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Document Number: 91000 www.vishay.com

Revision: 11-Mar-11 1