VS-ST1200C..

K Series
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Vishay Semiconductors
Phase Control Thyristors
(Hockey PUK Version), 1650 A
FEATURES
• Center amplifying gate
• Metal case with ceramic insulator
• International standard case A-24 (K-PUK)
• High profile hockey PUK
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS
A-24 (K-PUK) • DC motor controls
• Controlled DC power supplies
• AC controllers
PRODUCT SUMMARY 
Package A-24 (K-PUK) 
Diode variation Single SCR 
IT(AV) 1650 A 
VDRM/VRRM 1200 V, 1400 V, 1600 V, 1800 V, 2000 V 
VTM 1.73 V 
IGT 100 mA


TJ -40 °C to 125 °C

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS
1650 A
IT(AV)
Ths 55 °C
3080 A
IT(RMS)
Ths 25 °C
50 Hz 30 500
ITSM A
60 Hz 32 000
50 Hz 4651
I2t kA2s
60 Hz 4250
VDRM/VRRM 1200 to 2000 V
tq Typical 200 μs
TJ -40 to 125 °C

ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
VDRM/VRRM, MAXIMUM REPETITIVE VRSM, MAXIMUM IDRM/IRRM MAXIMUM
VOLTAGE
TYPE NUMBER PEAK AND OFF-STATE VOLTAGE NON-REPETITIVE PEAK VOLTAGE AT TJ = TJ MAXIMUM
CODE
V V mA
12 1200 1300
14 1400 1500
VS-ST1200C..K 16 1600 1700 100
18 1800 1900
20 2000 2100

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ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state current 180° conduction, half sine wave 1650 (700) A
IT(AV)
at heatsink temperature double side (single side) cooled 55 (85) °C
Maximum RMS on-state current IT(RMS) DC at 25 °C heatsink temperature double side cooled 3080
t = 10 ms No voltage 30 500
t = 8.3 ms reapplied 32 000 A
Maximum peak, one-cycle
ITSM
non-repetitive surge current t = 10 ms 25 700
100 % VRRM 
t = 8.3 ms reapplied 26 900
Sinusoidal half wave,
t = 10 ms initial TJ = TJ maximum 4651
No voltage
t = 8.3 ms reapplied 4250
Maximum I2t for fusing I2t kA2s
t = 10 ms 100 % VRRM  3300
t = 8.3 ms reapplied 3000
Maximum I2t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 46 510 kA2s
Low level value of threshold voltage VT(TO)1 (16.7 % x  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum 0.91
V
High level value of threshold voltage VT(TO)2 (I >  x IT(AV)), TJ = TJ maximum 1.01
Low level value of on-state slope resistance rt1 (16.7 % x  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum 0.21
m
High level value of on-state slope resistance rt2 (I >  x IT(AV)), TJ = TJ maximum 0.19
Maximum on-state voltage VTM Ipk = 4000 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.73 V
Maximum holding current IH 600
TJ = 25 °C, anode supply 12 V resistive load mA
Typical latching current IL 1000

SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum non-repetitive rate of Gate drive 20 V, 20 , tr  1 μs
dI/dt 1000 A/μs
rise of turned-on current TJ = TJ maximum, anode voltage  80 % VDRM
Gate current 1 A, dIg/dt = 1 A/μs
Typical delay time td 1.9
Vd = 0.67 % VDRM, TJ = 25 °C
μs
ITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/μs, 
Typical turn-off time tq 200
VR = 50 V, dV/dt = 20 V/μs, gate 0 V 100 , tp = 500 μs

BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum critical rate of rise of 
dV/dt TJ = TJ maximum linear to 80 % rated VDRM 500 V/μs
off-state voltage
Maximum peak reverse and  IRRM,
TJ = TJ maximum, rated VDRM/VRRM applied 100 mA
off-state leakage current IDRM

Revision: 09-Jan-15 2 Document Number: 94394

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TRIGGERING
VALUES
PARAMETER SYMBOL TEST CONDITIONS UNITS
TYP. MAX.
Maximum peak gate power PGM TJ = TJ maximum, tp  5 ms 16
W
Maximum average gate power PG(AV) TJ = TJ maximum, f = 50 Hz, d% = 50 3
Maximum peak positive gate current IGM 3.0 A
Maximum peak positive gate voltage + VGM TJ = TJ maximum, tp  5 ms 20
V
Maximum peak negative gate voltage - VGM 5.0
TJ = -40 °C 200 -
DC gate current required to trigger IGT TJ = 25 °C 100 200 mA
Maximum required gate trigger/
TJ = 125 °C current/voltage are the lowest 50 -
TJ = -40 °C value which will trigger all units 1.4 -
12 V anode to cathode applied
DC gate voltage required to trigger VGT TJ = 25 °C 1.1 3.0 V
TJ = 125 °C 0.9 -

DC gate current not to trigger IGD Maximum gate current/voltage 10 mA

not to trigger is the maximum
TJ = TJ maximum value which will not trigger any
unit with rated VDRM anode to
DC gate voltage not to trigger VGD cathode applied 0.25 V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating junction
TJ -40 to 125
temperature range °C
Maximum storage temperature range TStg -40 to 150

Maximum thermal resistance, DC operation single side cooled 0.0.42

RthJ-hs
junction to heatsink DC operation double side cooled 0.021
K/W
Maximum thermal resistance, DC operation single side cooled 0.006
RthC-hs
case to heatsink DC operation double side cooled 0.003
24 500 N
Mounting force, ± 10 %
(2500) (kg)
Approximate weight 425 g
Case style See dimensions - link at the end of datasheet A-24 (K-PUK)

RthJC CONDUCTION
SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION
CONDUCTION ANGLE TEST CONDITIONS UNITS
SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE
180° 0.003 0.003 0.002 0.002
120° 0.004 0.004 0.004 0.004
90° 0.005 0.005 0.005 0.005 TJ = TJ maximum K/W
60° 0.007 0.007 0.007 0.007
30° 0.012 0.012 0.012 0.012
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC

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Maximum Allowable Heatsink Temperature (°C)

Maximum Allowable Heatsink Temperature (°C)

130 130
ST1200C..K Series ST1200C..K Series
120 (Double Side Cooled)
120 (Single Side Cooled)
RthJ-hs (DC) = 0.042 K/W 110 R thJ-hs (DC) = 0.021 K/W
110
100
100 90
90 Conduction Angle 80 Conduction Period
80 30° 70
60° 60
70 90°
50 30°
60 120° 40 60° 90°
50 180°
30 120° 180°
DC
40 20
0 200 400 600 800 1000 1200 0 600 1200 1800 2400 3000 3600
Average On-state Current (A) Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics
Maximum Allowable Heatsink Temperature (°C)

Maximum Allowable Heatsink Temperature (°C)

130 4000
ST1200C..K Series 180°
120 120°
(Single Side Cooled) 3500
110 R thJ-hs (DC) = 0.042 K/W 90°
100 3000 60°
30°
90 2500 RMS Limit
80 Conduction Period
2000
70
60 1500
30°
50 1000 Conduction Angle
60°
40 90°
120° 500 ST1200C..K Series
30 180° T J = 125°C
DC
20 0
0 400 800 1200 1600 2000 0 400 800 1200 1600 2000
Average On-state Current (A) Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics Fig. 5 - On-State Power Loss Characteristics
Maximum Allowable Heatsink Temperature (°C)

Maximum Allowable Heatsink Temperature (°C)

130 5000
ST1200C..K Series DC
120 (Double Side Cooled) 180°
110 R thJ-hs (DC) = 0.021 K/W 4000 120°
100 90°
60°
90 3000 30°
Conduction Angle
80 RMS Limit
70 2000
Conduction Period
60 30°
60°
90°
50 120° 1000 ST1200C..K Series
180° TJ = 125°C
40
30 0
0 400 800 1200 1600 2000 0 600 1200 1800 2400 3000 3600
Average On-state Current (A) Average On-state Current (A)
Fig. 3 - Current Ratings Characteristics Fig. 6 - On-State Power Loss Characteristics

Revision: 09-Jan-15 4 Document Number: 94394

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Peak Half Sine Wave On-state Current (A)

Peak Half Sine Wave On-state Current (A)

28000 32000
At Any Rated Load Condition And With Maximum Non Repetitive Surge Current
Rated VRRM Applied Following Surge. 30000 Versus Pulse Train Duration. Control
26000 Initial TJ = 125°C Of Conduction May Not Be Maintained.
28000 Initial TJ = 125°C
@ 60 Hz 0.0083 s
24000 No Voltage Reapplied
@ 50 Hz 0.0100 s 26000
Rated VRRM Reapplied
22000 24000
20000 22000

18000 20000
18000
16000
16000
14000 ST1200C..K Series 14000 ST1200C..K Series
12000 12000
1 10 100 0.01 0.1 1
Number Of Equal Amplitude Half Cycle Current Pulses (N) Pulse Train Duration (s)
Fig. 7 - Maximum Non-Repetitive Surge Current Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled Single and Double Side Cooled

10000
Instantaneous On-state Current (A)

1000
TJ = 25°C
TJ = 125°C

ST1200C..K Series

100
0.5 1 1.5 2 2.5 3
Instantaneous On-state Voltage (V)
Fig. 9 - On-State Voltage Drop Characteristics
Transient Thermal Impedance Z thJ-hs (K/W)

0.1
Steady State Value
R thJ-hs = 0.042 K/W
(Single Side Cooled)
R thJ-hs = 0.021 K/W
(Double Side Cooled)
0.01 (DC Operation)

ST1200C..K Series

0.001
0.001 0.01 0.1 1 10
Square Wave Pulse Duration (s)
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics

Revision: 09-Jan-15 5 Document Number: 94394

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100
Rectangular gate pulse (1) PGM = 10W, tp = 4ms
a) Recommended load line for (2) PGM = 20W, tp = 2ms

Instantaneous Gate Voltage (V)

rated di/dt : 20V, 10ohms; tr<=1 µs
b) Recommended load line for (3) PGM = 40W, tp = 1ms
<=30% rated di/dt : 10V, 10ohms
tr<=1 µs
10 (a)
(b)

Tj=-40 °C
Tj=25 °C
1

Tj=125 °C
(1) (2) (3)
VGD
IGD Device: ST1200C..K Series Frequency Limited by PG(AV)
0.1
0.001 0.01 0.1 1 10 100
Instantaneous Gate Current (A)
Fig. 11 - Gate Characteristics

ORDERING INFORMATION TABLE

Device code VS- ST 120 0 C 20 K 1 -

1 2 3 4 5 6 7 8 9

1 - Vishay Semiconductors product

2 - Thyristor
3 - Essential part number
4 - 0 = Converter grade
5 - C = Ceramic PUK
6 - Voltage code: Code x 100 = VRRM (see Voltage Ratings table)
7 - K = PUK case A-24 (K-PUK)
8 - 0 = Eyelet terminals (gate and auxiliary cathode unsoldered leads)
1 = Fast-on terminals (gate and auxiliary cathode unsoldered leads)
9 - Critical dV/dt: None = 500 V/µs (standard selection)
L = 1000 V/µs (special selection)

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95081

Revision: 09-Jan-15 6 Document Number: 94394

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 Outline Dimensions
Vishay Semiconductors

A-24 (K-PUK)

DIMENSIONS in millimeters (inches)

Creepage distance: 28.88 (1.137) minimum

Strike distance: 17.99 (0.708) minimum

1 (0.04) MIN. 47.5 (1.87) DIA. MAX.

2 places 2 places

27.5 (1.08) MAX. Pin receptable

AMP. 60598-1

67 (2.6) DIA. MAX.

4.75 (0.2) NOM. 20° ± 5°

74.5 (2.9) DIA. MAX.

44 (1.73)

2 holes DIA. 3.5 (0.14) x 2.1 (0.1) deep

Quote between upper and lower pole pieces has to be considered after
application of mounting force (see thermal and mechanical specification)

Document Number: 95081 For technical questions, contact: [email protected] www.vishay.com

Revision: 02-Aug-07 1
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