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    APPLICATION General Purpose Amplifier Applications..: - PNP Silicon

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    Alexander Pineda
    This document provides specifications for an A844 general purpose PNP silicon transistor. Key parameters include: - Maximum ratings of collector-base voltage (-55V), collector-emitter voltage (-55V), emitter-base voltage (-5V), collector current (-100mA), collector power dissipation (300mW), and junction temperature (150°C). - Electrical characteristics including typical DC current gain of 160-500, collector cutoff current less than -0.1uA, and collector-emitter saturation voltage of -0.1V to -0.5V. - Gain bandwidth product of typically 200MHz and common base output capacitance of 2pF. - The

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    APPLICATION General Purpose Amplifier Applications..: - PNP Silicon

    Uploaded by

    Alexander Pineda
    9 views1 page
    This document provides specifications for an A844 general purpose PNP silicon transistor. Key parameters include: - Maximum ratings of collector-base voltage (-55V), collector-emitter voltage (-55V), emitter-base voltage (-5V), collector current (-100mA), collector power dissipation (300mW), and junction temperature (150°C). - Electrical characteristics including typical DC current gain of 160-500, collector cutoff current less than -0.1uA, and collector-emitter saturation voltage of -0.1V to -0.5V. - Gain bandwidth product of typically 200MHz and common base output capacitance of 2pF. - The

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    A844-FGX

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    This document provides specifications for an A844 general purpose PNP silicon transistor. Key parameters include: - Maximum ratings of collector-base voltage (-55V), collector-emitter voltage (-55V), emitter-base voltage (-5V), collector current (-100mA), collector power dissipation (300mW), and junction temperature (150°C). - Electrical characteristics including typical DC current gain of 160-500, collector cutoff current less than -0.1uA, and collector-emitter saturation voltage of -0.1V to -0.5V. - Gain bandwidth product of typically 200MHz and common base output capacitance of 2pF. - The

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    9 views1 page

    APPLICATION General Purpose Amplifier Applications..: - PNP Silicon

    Uploaded by

    Alexander Pineda
    This document provides specifications for an A844 general purpose PNP silicon transistor. Key parameters include: - Maximum ratings of collector-base voltage (-55V), collector-emitter voltage (-55V), emitter-base voltage (-5V), collector current (-100mA), collector power dissipation (300mW), and junction temperature (150°C). - Electrical characteristics including typical DC current gain of 160-500, collector cutoff current less than -0.1uA, and collector-emitter saturation voltage of -0.1V to -0.5V. - Gain bandwidth product of typically 200MHz and common base output capacitance of 2pF. - The

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    © All Rights Reserved
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    of 1

    风光欣技术资料 A844

    ■■APPLICATION：General Purpose Amplifier Applications.. —PNP silicon —

    ■■MAXIMUM RATINGS（Ta＝25℃）

    PARAMETER SYMBOL RATING UNIT

    Collector-base voltage VCBO -55 V

    Collector-emitter voltage VCEO -55 V

    Emitter-base voltage VEBO -5 V

    Collector current IC -100 mA

    Collector Power Dissipation PC 300 mW

    Junction Temperature TJ 150 ℃

    Storage Temperature Range Tstg ﹣55~150 ℃

    ■■ELECTRICAL CHARACTERISTICS（Ta=25℃）
    PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITION

    DC Current Gain hFE 160 500 VCE= -12V，Ic= -2mA

    Collector Cut-off Current ICBO -0.1 µA VCB= -18V，IE=0

    Emitter Cut-off Current IEBO -0.05 µA VEB= -2V，Ic=0

    Collector-Base Breakdown Voltage BVCBO -55 V Ic= -0.1mA，IE=0

    Collector-Emitter Breakdown Voltage BVCEO -55 V Ic= -1mA，IB=0

    Emitter-Base Breakdown Voltage BVEBO -5 V IE= -0.1mA，Ic=0

    Base-Emitter Voltage VBE -0.66 -0.75 V VCE= -12V，Ic= -2mA

    Collector-Emitter Saturation Voltage VCE(sat) -0.1 -0.5 V Ic= -10mA，IB= -1mA

    Gain bandwidth product fT 200 MHz Ic= -2mA，VCE= -12V

    Common Base Output Capacitance Cob 2 PF VCB= -10V, IE=0, f = 1MHz

    ■■hFE Classification
    Classification C D
    hFE 160~320 250~500

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