TC4451/TC4452

12A High-Speed MOSFET Drivers

Features: General Description:
• High Peak Output Current: 13A (typical) The TC4451/TC4452 are single-output MOSFET
• Low Shoot-Through/Cross-Conduction Current in drivers. These devices are high-current buffers/drivers
Output Stage capable of driving large MOSFETs and insulated gate
• Wide Input Supply Voltage Operating Range: bipolar transistors (IGBTs). The TC4451/TC4452 have
matched output rise and fall times, as well as matched
- 4.5V to 18V
leading and falling-edge propagation delay times. The
• High Continuous Output Current: 2.6A TC4451/TC4452 devices also have very low cross-
(maximum) conduction current, reducing the overall power
• Matched Fast Rise and Fall Times: dissipation of the device.
- 21 ns with 10,000 pF Load These devices are essentially immune to any form of
- 42 ns with 22,000 pF Load upset, except direct overvoltage or over-dissipation.
• Matched Short Propagation Delays: 44 ns They cannot be latched under any conditions within
(typical) their power and voltage ratings. These parts are not
• Low Supply Current: subject to damage or improper operation when up to
5V of ground bounce is present on their ground
- With Logic ‘1’ Input – 140 µA (typical)
terminals. They can accept, without damage or logic
- With Logic ‘0’ Input – 40 µA (typical) upset, more than 1.5A inductive current of either
• Low Output Impedance: 0.9 (typical) polarity being forced back into their outputs. In addition,
• Latch-Up Protected: Withstands 1.5A Output all terminals are fully protected against electrostatic
Reverse Current discharge (ESD) up to 4.0 kV (HBM) and 400V (MM).
• Input Withstands Negative Inputs Up To 5V The TC4451/TC4452 inputs may be driven directly
• Pin-Compatible with the TC4420/TC4429, from either TTL or CMOS (3V to 18V). Moreover,
TC4421/TC4422 and TC4421A/TC4422A 300 mV of hysteresis is built into the input, providing
MOSFET Drivers noise immunity and enabling the device to be driven
• Space-Saving, Thermally-Enhanced, 8-Pin DFN- from slowly rising or falling waveforms.
S Package With a wide operating temperature range and having
both surface-mount and pin-through-hole packages,
Applications: the TC4451/TC4452 family of 12A MOSFET drivers fits
into any application where high gate/line capacitance
• Line Drivers for Extra Heavily-Loaded Lines drive is required.
• Pulse Generators
• Driving the Largest MOSFETs and IGBTs
• Local Power On/Off Switch
• Motor and Solenoid Driver
• LF Initiator

 2006-2014 Microchip Technology Inc. DS20001987C-page 1

TC4451/TC4452
Package Types

8-Pin PDIP/SOIC(1, 2)
TC4451 TC4452

VDD 1 8 VDD VDD 1 8 VDD

INPUT 2 7 OUTPUT INPUT 2 7 OUTPUT
NC 3 6 OUTPUT NC 3 6 OUTPUT
GND 4 5 GND GND 4 5 GND

8-Pin DFN-S(1, 2)
TC4451 TC4452
VDD 1 8 VDD VDD 1 8 VDD
INPUT 2 EP 7 OUTPUT INPUT 2 EP 7 OUTPUT
9 NC 3 9
NC 3 6 OUTPUT 6 OUTPUT
GND 4 5 GND GND 4 5 GND

(1, 2)
5-Pin TO-220
TC4451
TC4452

Tab is Common to VDD

VDD
GND

GND
INPUT

OUTPUT

Note 1: Duplicate pins must both be connected for proper operation.

2: Exposed thermal pad (EP) of the DFN-S package is electrically isolated; see Table 3-1.

DS20001987C-page 2  2006-2014 Microchip Technology Inc.

 TC4451/TC4452
Functional Block Diagram

VDD

TC4451
Inverting

140 µA
300 mV Output
Cross-Conduction
Reduction and Pre-Drive Output
Circuitry

TC4452
Input
Non-Inverting
4.7V

GND
Effective
Input
C = 25 pF

 2006-2014 Microchip Technology Inc. DS20001987C-page 3

TC4451/TC4452
1.0 ELECTRICAL † Notice: Stresses above those listed under “Absolute
Maximum Ratings” may cause permanent damage to
CHARACTERISTICS the device. These are stress ratings only and functional
operation of the device at these or any other conditions
Absolute Maximum Ratings †
above those indicated in the operation sections of the
Supply Voltage .....................................................+20V specifications is not implied. Exposure to Absolute
Input Voltage .................... (VDD + 0.3V) to (GND – 5V) Maximum Rating conditions for extended periods may
affect device reliability.
Input Current (VIN > VDD) ...................................50 mA

DC CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, TA = +25°C with 4.5V  VDD  18V.
Parameters Sym. Min. Typ. Max. Units Conditions
Input
Logic ‘1’, High Input Voltage VIH 2.4 1.5 — V
Logic ‘0’, Low Input Voltage VIL — 1.3 0.8 V
Input Current IIN -10 — +10 µA 0V  VIN  VDD
Input Voltage VIN -5 — VDD + 0.3 V
Output
High Output Voltage VOH VDD – 0.025 — — V DC Test
Low Output Voltage VOL — — 0.025 V DC Test
Output Resistance, High ROH — 1.0 1.5  IOUT = 10 mA, VDD = 18V
Output Resistance, Low ROL — 0.9 1.5  IOUT = 10 mA, VDD = 18V
Peak Output Current IPK — 13 — A VDD = 18V
Continuous Output Current IDC 2.6 — — A 10V  VDD  18V (Note 2,
Note 3)
Latch-Up Protection IREV — >1.5 — A Duty cycle  2%, t  300 µs
Withstand Reverse Current
Switching Time (Note 1)
Rise Time tR — 30 40 ns Figure 4-1, CL = 15,000 pF
Fall Time tF — 32 40 ns Figure 4-1, CL = 15,000 pF
Propagation Delay Time tD1 — 44 52 ns Figure 4-1, CL = 15,000 pF
Propagation Delay Time tD2 — 44 52 ns Figure 4-1, CL = 15,000 pF
Power Supply
Power Supply Current IS — 140 200 µA VIN = 3V
— 40 100 µA VIN = 0V
Operating Input Voltage VDD 4.5 — 18.0 V
VDD Ramp Rate SVDD 0.2 — — V/ms
Note 1: Switching times ensured by design.
2: Tested during characterization, not production tested.
3: Valid for AT and MF packages only. TA = +25°C.

DS20001987C-page 4  2006-2014 Microchip Technology Inc.

 TC4451/TC4452
DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE)
Electrical Specifications: Unless otherwise noted, over the operating temperature range with 4.5V  VDD  18V.
Parameters Sym. Min. Typ. Max. Units Conditions
Input
Logic ‘1’, High Input Voltage VIH 2.4 — — V
Logic ‘0’, Low Input Voltage VIL — — 0.8 V
Input Current IIN -10 — +10 µA 0V  VIN  VDD
Output
High Output Voltage VOH VDD – 0.025 — — V DC Test
Low Output Voltage VOL — — 0.025 V DC Test
Output Resistance, High ROH — — 2.2  IOUT = 10 mA, VDD = 18V
Output Resistance, Low ROL — — 2.0  IOUT = 10 mA, VDD = 18V
Switching Time (Note 1)
Rise Time tR — 35 60 ns Figure 4-1, CL = 15,000 pF
Fall Time tF — 38 60 ns Figure 4-1, CL = 15,000 pF
Propagation Delay Time tD1 — 55 65 ns Figure 4-1, CL = 15,000 pF
Propagation Delay Time tD2 — 55 65 ns Figure 4-1, CL = 15,000 pF
Power Supply
Power Supply Current IS — 200 400 µA VIN = 3V
— 50 150 µA VIN = 0V
Operating Input Voltage VDD 4.5 — 18.0 V
VDD Ramp Rate SVDD 0.2 — — V/ms
Note 1: Switching times ensured by design.

TEMPERATURE CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V  VDD  18V.
Parameters Sym. Min. Typ. Max. Units Conditions
Temperature Ranges
Specified Temperature Range (V) TA -40 — +125 °C
Maximum Junction Temperature TJ — — +150 °C
Storage Temperature Range TA -65 — +150 °C
Package Thermal Resistances
Thermal Resistance, 5L-TO-220 JA — 39.5 — °C/W Without heat sink
Thermal Resistance, 8L-6x5 DFN-S JA — 35.7 — °C/W Typical four-layer board with
vias to ground plane
Thermal Resistance, 8L-PDIP JA — 89.3 — °C/W
Thermal Resistance, 8L-SOIC JA — 149.5 — °C/W

 2006-2014 Microchip Technology Inc. DS20001987C-page 5

TC4451/TC4452
2.0 TYPICAL PERFORMANCE CURVES
Note: The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.

Note: Unless otherwise indicated, TA = +25°C with 4.5V  VDD  18V.

220 300
200 47,000 pF
180 250
5V
160
Rise Time (ns)

Fall Time (ns)

140 200
120 10V
150
100 22,000 pF
80 100
60
40 50 18V
20 10,000 pF
0 0
4 6 8 10 12 14 16 18 100 1000 10000 100000
Supply Voltage (V) Capacitive Load (pF)

FIGURE 2-1: Rise Time vs. Supply FIGURE 2-4: Fall Time vs. Capacitive
Voltage. Load.

300 40
VDD = 18V
Rise and Fall Times (ns)

250 tRISE
5V
30
Rise Time (ns)

200 tFALL
10V
150 20

100
18V 10
50

0 0
100 1000 10000 100000 -40 -25 -10 5 20 35 50 65 80 95 110 125
Capacitive Load (pF) Temperature (°C)

FIGURE 2-2: Rise Time vs. Capacitive FIGURE 2-5: Rise and Fall Times vs.
Load. Temperature.

10 -7
1E-07
220
Crossover Energy (A·sec)

200 47,000 pF
180
160
Fall Time (ns)

140
120 10 -8
1E-08
100 22,000 pF
80
60
40
20 10,000 pF
10 -9
1E-09
0
4 6 8 10 12 14 16 18 4 6 8 10 12 14 16 18
Supply Voltage (V) Supply Voltage (V)

FIGURE 2-3: Fall Time vs. Supply FIGURE 2-6: Crossover Energy vs.
Voltage. Supply Voltage.

DS20001987C-page 6  2006-2014 Microchip Technology Inc.

 TC4451/TC4452
Note: Unless otherwise indicated, TA = +25°C with 4.5V  VDD  18V.

95 140
CLOAD = 15,000 pF
90
Propagation Delay (ns)

VIN = 5V
85 120
INPUT = High
80

IQUIESCENT (µA)
75 100
70
80
65
60 60
55
tD2 INPUT = Low
50 40
45 tD1
40 20
4 6 8 10 12 14 16 18 4 6 8 10 12 14 16 18
Supply Voltage (V) Supply Voltage (V)

FIGURE 2-7: Propagation Delay vs. FIGURE 2-10: Quiescent Supply Current
Supply Voltage. vs. Supply Voltage.

100 220
95 CLOAD = 15,000 pF 200 VDD = 18 V
Propagation Delay (ns)

VDD = 10V
90 180 INPUT = High

IQUIESCENT (µA)
85 160
80 140
75 120
70 100
65 80
60 INPUT = Low
tD2 60
55
50 40
45 tD1 20
40 -40 -25 -10 5 20 35 50 65 80 95 110 125
2 3 4 5 6 7 8 9 10
Input Amplitude (V) Temperature (oC)

FIGURE 2-8: Propagation Delay vs. Input FIGURE 2-11: Quiescent Supply Current
Amplitude. vs. Temperature.

60 2
VDD = 10V VDD = 12 V
1.9
Propagation Delay (ns)

55 VIN = 5V
Input Threshold (V)

CLOAD = 15,000 pF 1.8

50 1.7
1.6
VIH
45 1.5
tD2 1.4
40 1.3
1.2 VIL
35
tD1 1.1
30 1
-40 -25 -10 5 20 35 50 65 80 95 110 125 -40 -25 -10 5 20 35 50 65 80 95 110 125
Temperature (oC) Temperature (oC)

FIGURE 2-9: Propagation Delay vs. FIGURE 2-12: Input Threshold vs.
Temperature. Temperature.

 2006-2014 Microchip Technology Inc. DS20001987C-page 7

TC4451/TC4452
Note: Unless otherwise indicated, TA = +25°C with 4.5V  VDD  18V.

2 300
VDD = 18 V
1.9 200 kHz
250

Supply Current (mA)

1.8
Input Threshold (V)

1.7 200
100 kHz
1.6
VIH 150 2 MHz
1.5 50 kHz
1.4
100
1.3 1 MHz 10 kHz
1.2 VIL 50
1.1
0
1
100 1,000 10,000 100,000
4 6 8 10 12 14 16 18
Supply Voltage (V) Capacitive Load (pF)

FIGURE 2-13: Input Threshold vs. Supply FIGURE 2-16: Supply Current vs.
Voltage. Capacitive Load (VDD = 18V).

4.0 300
VIN = 5V (TC4452) VDD = 12 V 1 MHz
3.5 VIN = 0V (TC4451) 250

Supply Current (mA)

200 kHz
3.0
200
ROUT-HI (:)

2.5
2.0 TJ = +125oC 150 100 kHz

1.5
100 2 MHz 50 kHz
1.0
o
TJ = +25 C 50 10 kHz
0.5
0.0 0
4 6 8 10 12 14 16 18 100 1,000 10,000 100,000

Supply Voltage (V) Capacitive Load (pF)

FIGURE 2-14: High State Output FIGURE 2-17: Supply Current vs.
Resistance vs. Supply Voltage. Capacitive Load (VDD = 12V).

3.0 175
VIN = 0V (TC4452) VDD = 6 V 2 MHz
VIN = 5V (TC4451) 155 1 MHz
2.5
Supply Current (mA)

135
2.0 115
ROUT-LO (:)

200 kHz

o 95
1.5 TJ = +125 C
75 100 kHz

1.0 55
50 kHz
35
0.5 TJ = +25oC 10 kHz
15
0.0 -5
4 6 8 10 12 14 16 18 100 1,000 10,000 100,000
Supply Voltage (V) Capacitive Load (pF)

FIGURE 2-15: Low State Output FIGURE 2-18: Supply Current vs.
Resistance vs. Supply Voltage. Capacitive Load (VDD = 6V).

DS20001987C-page 8  2006-2014 Microchip Technology Inc.

 TC4451/TC4452
Note: Unless otherwise indicated, TA = +25°C with 4.5V  VDD  18V.

250
VDD = 18 V 15,000 pF
Supply Current (mA)

200
10,000 pF
22,000 pF
150 1,000 pF
47,000 pF

100
0.1 µF
470 pF
50

0
10 100 1000 10000
Frequency (kHz)

FIGURE 2-19: Supply Current vs.

Frequency (VDD = 18V).

250
VDD = 12 V
15,000 pF
Supply Current (mA)

200

150 22,000 pF 10,000 pF

100 47,000 pF 1,000 pF

0.1 µF
50 470 pF

0
10 100 1000 10000
Frequency (kHz)

FIGURE 2-20: Supply Current vs.

Frequency (VDD = 12V).

250
VDD = 6 V
Supply Current (mA)

200
15,000 pF

150
22,000 pF

100 10,000 pF
47,000 pF

50 1,000 pF
0.1 µF
470 pF
0
10 100 1000 10000
Frequency (kHz)

FIGURE 2-21: Supply Current vs.

Frequency (VDD = 6V).

 2006-2014 Microchip Technology Inc. DS20001987C-page 9

TC4451/TC4452
3.0 PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.

TABLE 3-1: PIN FUNCTION TABLE

8-Pin PDIP,
8-Pin DFN-S 5-Pin TO-220 Symbol Description
SOIC
1 1 — VDD Supply input, 4.5V to 18V
2 2 1 INPUT Control input, TTL/CMOS-compatible input
3 3 — NC No connection
4 4 2 GND Ground
5 5 4 GND Ground
6 6 5 OUTPUT/OUTPUT CMOS push-pull output
7 7 — OUTPUT/OUTPUT CMOS push-pull output
8 8 3 VDD Supply input, 4.5V to 18V
— 9 — EP Exposed thermal pad
— — TAB VDD Thermal tab is at the VDD potential

3.1 Supply Input (VDD) 3.4 Ground (GND)

The VDD input is the bias supply for the MOSFET driver The ground pins are the return path for the bias current
and is rated for 4.5V to 18V with respect to the ground and for the high peak currents that discharge the load
pin. The VDD input should be bypassed to ground with capacitor. The ground pins should be tied into a ground
a local ceramic capacitor. The value of the capacitor plane or have very short traces to the bias supply
should be chosen based on the capacitive load that is source return.
being driven. A minimum value of 1.0 µF is suggested.
3.5 Exposed Thermal Pad (EP)
3.2 Control Input (INPUT)
The exposed thermal pad of the 6x5 DFN-S package is
The MOSFET driver input is a high-impedance, not internally connected to any potential. Therefore,
TTL/CMOS-compatible input. The input also has this pad can be connected to a ground plane or other
300 mV of hysteresis between the high and low copper plane on a printed circuit board (PCB) to help
thresholds that prevents output glitching even when the remove heat from the package.
rise and fall time of the input signal is very slow.
3.6 Thermal Tab
3.3 CMOS Push-Pull Output (OUTPUT,
The thermal tab of the TO-220 package is connected to
OUTPUT) the VDD potential of the device and this connection is
The MOSFET driver output is a low-impedance, used as a current-carrying path.
CMOS, push-pull style output capable of driving a
capacitive load with 12A peak currents. The MOSFET
driver output is capable of withstanding 1.5A peak
reverse currents of either polarity.

DS20001987C-page 10  2006-2014 Microchip Technology Inc.

 TC4451/TC4452
4.0 APPLICATIONS INFORMATION

+5V
90%
Input

10%
0V
tD1 tD2
tF tR
+18V
90% 90%
Output
10% 10%
0V
Inverting Driver
VDD = 18V TC4451

0.1 µF 0.1 µF 4.7 µF

1 8
VDD VDD

Input 2 Input Output 6 Output

Output 7
CL = 15,000 pF
GND GND
4 5

Input: 100 kHz, square wave +5V

90%
tRISE = tFALL  10 ns
Input

10%
0V
+18V 90%
tD1 90% tD2
Output tR tF

0V 10% 10%

Non-Inverting Driver
TC4452

Note: Pinout shown is for the DFN-S, PDIP and SOIC packages.

FIGURE 4-1: Switching Time Test Circuits.

 2006-2014 Microchip Technology Inc. DS20001987C-page 11

TC4451/TC4452
5.0 PACKAGING INFORMATION
5.1 Package Marking Information
5-Lead TO-220 Example

TC4451
XXXXXXXXX
XXXXXXXXX e3
VAT^^
YYWWNNN
1319256

8-Lead DFN-S (6x5x0.9 mm) Example

TC4451
VMF e^^
3
1319
256
NNN

PIN 1 PIN 1

8-Lead PDIP (300 mil) Example

XXXXXXXX TC4451V
XXXXXNNN e3 256
PA^^
1319
YYWW

8-Lead SOIC (3.90 mm) Example

TC4451V
e3 1319
OA^^
256
NNN

Legend: XX...X Customer-specific information

Y Year code (last digit of calendar year)
YY Year code (last 2 digits of calendar year)
WW Week code (week of January 1 is week ‘01’)
NNN Alphanumeric traceability code
e3 Pb-free JEDEC® designator for Matte Tin (Sn)
* This package is Pb-free. The Pb-free JEDEC designator ( e3 )
can be found on the outer packaging for this package.
Note: In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.

DS20001987C-page 12  2006-2014 Microchip Technology Inc.

 TC4451/TC4452


  

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 2006-2014 Microchip Technology Inc. DS20001987C-page 13

TC4451/TC4452


 

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NOTE 1 1 NOTE 1
1 2 2
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TOP VIEW BOTTOM VIEW

A3 A1

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DS20001987C-page 14  2006-2014 Microchip Technology Inc.

 TC4451/TC4452

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 2006-2014 Microchip Technology Inc. DS20001987C-page 15

TC4451/TC4452

/HDG3ODVWLF'XDO,Q/LQH3$PLO%RG\>3',3@

1RWH For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging

D A
N B

E1

NOTE 1
1 2
TOP VIEW

C A A2

3/$1(
L c
A1

e eB
8X b1
8X b
.010 C

SIDE VIEW END VIEW

Microchip Technology Drawing No. C04-018D Sheet 1 of 2

DS20001987C-page 16  2006-2014 Microchip Technology Inc.

 TC4451/TC4452

/HDG3ODVWLF'XDO,Q/LQH3$PLO%RG\>3',3@

1RWH For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging

ALTERNATE LEAD DESIGN

(VENDOR DEPENDENT)

DATUM A DATUM A

b b
e e
2 2

e e

Units INCHES
Dimension Limits MIN NOM MAX
Number of Pins N 8
Pitch e .100 BSC
Top to Seating Plane A - - .210
Molded Package Thickness A2 .115 .130 .195
Base to Seating Plane A1 .015 - -
Shoulder to Shoulder Width E .290 .310 .325
Molded Package Width E1 .240 .250 .280
Overall Length D .348 .365 .400
Tip to Seating Plane L .115 .130 .150
Lead Thickness c .008 .010 .015
Upper Lead Width b1 .040 .060 .070
Lower Lead Width b .014 .018 .022
Overall Row Spacing § eB - - .430
Notes:
1. Pin 1 visual index feature may vary, but must be located within the hatched area.
2. § Significant Characteristic
3. Dimensions D and E1 do not include mold flash or protrusions. Mold flash or
protrusions shall not exceed .010" per side.
4. Dimensioning and tolerancing per ASME Y14.5M
BSC: Basic Dimension. Theoretically exact value shown without tolerances.

Microchip Technology Drawing No. C04-018D Sheet 2 of 2

 2006-2014 Microchip Technology Inc. DS20001987C-page 17

TC4451/TC4452

Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging

DS20001987C-page 18  2006-2014 Microchip Technology Inc.

 TC4451/TC4452

Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging

 2006-2014 Microchip Technology Inc. DS20001987C-page 19

TC4451/TC4452


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DS20001987C-page 20  2006-2014 Microchip Technology Inc.

 TC4451/TC4452
APPENDIX A: REVISION HISTORY

Revision C (July 2014)

The following is the list of modifications:
1. Added value for Electrostatic Discharge (ESD)
protection – Machine Model (MM) in General
Description: column.
2. Updated package marking information and
drawings in Section 5.0, Packaging Information.
3. Minor grammatical and spelling corrections.

Revision B (March 2012)

The following is the list of modifications:
1. Added VDD Ramp Rate value in both DC
Characteristics and DC Characteristics (Over
Operating Temperature Range) tables.
2. Updated package thermal resistances values in
Temperature Characteristics table.
3. Updated package specification drawings in
Section 5.0, Packaging Information to show
all available drawings.

Revision A (February 2006)

• Original release of this document.

 2006-2014 Microchip Technology Inc. DS20001987C-page 21

TC4451/TC4452
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO. X XX XXX Examples:
a) TC4451VAT: 12A High-Speed
Device Temperature Package Tape & Reel Inverting
Range MOSFET Driver,
TO-220 package
b) TC4451VOA: 12A High-Speed
Device: TC4451: 12A High-Speed MOSFET Driver, Inverting
Inverting
TC4452: 12A High-Speed MOSFET Driver, Non-Inverting
MOSFET Driver,
SOIC package
Temperature Range: V = -40°C to +125°C c) TC4451VMF: 12A High-Speed
Inverting
Package: * AT = TO-220, 5-lead MOSFET Driver,
MF = Dual, Flat, No-Lead (6x5 mm Body), 8-lead DFN-S package
MF713 = Dual, Flat, No-Lead (6x5 mm Body), 8-lead
(Tape and Reel) a) TC4452VPA: 12A High-Speed
PA = Plastic DIP (300 mil Body), 8-lead Non-Inverting
OA = Plastic SOIC (150 mil Body), 8-lead MOSFET Driver,
OA713 = Plastic SOIC (150 mil Body), 8-lead PDIP package
(Tape and Reel)
b) TC4452VOA: 12A High-Speed
*All package offerings are Pb Free (Lead Free).
Non-Inverting
MOSFET Driver,
SOIC package
c) TC4452VMF: 12A High-Speed
Non-Inverting
MOSFET Driver,
DFN-S package

DS20001987C-page 22  2006-2014 Microchip Technology Inc.

Note the following details of the code protection feature on Microchip devices:
• Microchip products meet the specification contained in their particular Microchip Data Sheet.

• Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.

• There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.

• Microchip is willing to work with the customer who is concerned about the integrity of their code.

• Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”

Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.

Information contained in this publication regarding device Trademarks

applications and the like is provided only for your convenience The Microchip name and logo, the Microchip logo, dsPIC,
and may be superseded by updates. It is your responsibility to
FlashFlex, flexPWR, JukeBlox, KEELOQ, KEELOQ logo, Kleer,
ensure that your application meets with your specifications.
LANCheck, MediaLB, MOST, MOST logo, MPLAB,
MICROCHIP MAKES NO REPRESENTATIONS OR
OptoLyzer, PIC, PICSTART, PIC32 logo, RightTouch, SpyNIC,
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
SST, SST Logo, SuperFlash and UNI/O are registered
IMPLIED, WRITTEN OR ORAL, STATUTORY OR trademarks of Microchip Technology Incorporated in the
OTHERWISE, RELATED TO THE INFORMATION, U.S.A. and other countries.
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR The Embedded Control Solutions Company and mTouch are
FITNESS FOR PURPOSE. Microchip disclaims all liability registered trademarks of Microchip Technology Incorporated
arising from this information and its use. Use of Microchip in the U.S.A.
devices in life support and/or safety applications is entirely at Analog-for-the-Digital Age, BodyCom, chipKIT, chipKIT logo,
the buyer’s risk, and the buyer agrees to defend, indemnify and CodeGuard, dsPICDEM, dsPICDEM.net, ECAN, In-Circuit
hold harmless Microchip from any and all damages, claims, Serial Programming, ICSP, Inter-Chip Connectivity, KleerNet,
suits, or expenses resulting from such use. No licenses are KleerNet logo, MiWi, MPASM, MPF, MPLAB Certified logo,
conveyed, implicitly or otherwise, under any Microchip MPLIB, MPLINK, MultiTRAK, NetDetach, Omniscient Code
intellectual property rights. Generation, PICDEM, PICDEM.net, PICkit, PICtail,
RightTouch logo, REAL ICE, SQI, Serial Quad I/O, Total
Endurance, TSHARC, USBCheck, VariSense, ViewSpan,
WiperLock, Wireless DNA, and ZENA are trademarks of
Microchip Technology Incorporated in the U.S.A. and other
countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
Silicon Storage Technology is a registered trademark of
Microchip Technology Inc. in other countries.
GestIC is a registered trademarks of Microchip Technology
Germany II GmbH & Co. KG, a subsidiary of Microchip
Technology Inc., in other countries.
All other trademarks mentioned herein are property of their
respective companies.
© 2006-2014, Microchip Technology Incorporated, Printed in
the U.S.A., All Rights Reserved.
ISBN: 978-1-63276-429-4

QUALITY MANAGEMENT SYSTEM Microchip received ISO/TS-16949:2009 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
CERTIFIED BY DNV Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures

== ISO/TS 16949 ==
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.

 2006-2014 Microchip Technology Inc. DS20001987C-page 23

 Worldwide Sales and Service
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Tel: 631-435-6000 Tel: 86-29-8833-7252
Fax: 86-29-8833-7256
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Tel: 408-735-9110 China - Xiamen
Tel: 86-592-2388138
Canada - Toronto
Fax: 86-592-2388130
Tel: 905-673-0699
Fax: 905-673-6509 China - Zhuhai
Tel: 86-756-3210040
03/25/14
Fax: 86-756-3210049

DS20001987C-page 24  2006-2014 Microchip Technology Inc.