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    TIP120

    Uploaded by

    Christoffer Andrés Cabeza Zavaleta

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    TIP120

    Uploaded by

    Christoffer Andrés Cabeza Zavaleta
    3 views4 pages

    Copyright

    © © All Rights Reserved

    Available Formats

    PDF, TXT or read online from Scribd

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    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    3 views4 pages

    TIP120

    Uploaded by

    Christoffer Andrés Cabeza Zavaleta

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 4

    SavantIC Semiconductor Product Specification

    Silicon NPN Darlington Power Transistors TIP120/121/122

    DESCRIPTION
    ·With TO-220C package
    ·DARLINGTON
    ·High DC current gain
    ·Low collector saturation voltage
    ·Complement to type TIP125/126/127

    APPLICATIONS
    ·Designed for general–purpose amplifier
    and low–speed switching applications.

    PINNING
    PIN DESCRIPTION

    1 Base

    Collector;connected to
    2
    mounting base

    3 Emitter

    ABSOLUTE MAXIMUM RATINGS (Tc=25 )


    SYMBOL PARAMETER CONDITIONS VALUE UNIT

    TIP120 60

    VCBO Collector-base voltage TIP121 Open emitter 80 V

    TIP122 100

    TIP120 60

    VCEO Collector-emitter voltage TIP121 Open base 80 V

    TIP122 100

    VEBO Emitter-base voltage Open collector 5 V

    IC Collector current-DC 5 A

    ICM Collector current-Pulse 8 A

    IB Base current-DC 120 mA

    TC=25 65
    PC Collector power dissipation W
    Ta=25 2

    Tj Junction temperature 150

    Tstg Storage temperature -65~150


    SavantIC Semiconductor Product Specification

    Silicon NPN Darlington Power Transistors TIP120/121/122

    CHARACTERISTICS
    Tj=25 unless otherwise specified

    SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

    TIP120 60

    Collector-emitter
    VCEO(SUS) TIP121 IC=0.1A, IB=0 80 V
    sustaining voltage

    TIP122 100

    VCE(sat)-1 Collector-emitter saturation voltage IC=3A ,IB=12mA 2.0 V

    VCE(sat)-2 Collector-emitter saturation voltage IC=5A ,IB=20mA 4.0 V

    VBE Base-emitter on voltage IC=3.0A ; VCE=3V 2.5 V

    TIP120 VCB=60V, IE=0

    Collector
    ICBO TIP121 VCB=80V, IE=0 0.2 mA
    cut-off current

    TIP122 VCB=100V, IE=0

    TIP120 VCE=30V, IB=0

    Collector
    ICEO TIP121 VCE=40V, IB=0 0.5 mA
    cut-off current

    TIP122 VCE=50V, IB=0

    IEBO Emitter cut-off current VEB=5V; IC=0 2 mA

    hFE-1 DC current gain IC=0.5A ; VCE=3V 1000

    hFE-2 DC current gain IC=3.0A ; VCE=3V 1000

    Cob Output capacitance IE=0 ; VCB=10V,f=0.1MHz 200 pF

    2
    SavantIC Semiconductor Product Specification

    Silicon NPN Darlington Power Transistors TIP120/121/122

    PACKAGE OUTLINE

    Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)

    3
    SavantIC Semiconductor Product Specification

    Silicon NPN Darlington Power Transistors TIP120/121/122

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