Transistors

2SA0719, 2SA0720 (2SA719, 2SA720)

Silicon PNP epitaxial planar type

For low-frequency power amplification and driver amplification Unit: mm

Complementary to 2SC1317, 2SC1318 5.0±0.2 4.0±0.2

5.1±0.2
■ Features
• Complementary pair with 2SC1317 and 2SC1318

0.7±0.2
0.7±0.1
■ Absolute Maximum Ratings Ta = 25°C

12.9±0.5
Parameter Symbol Rating Unit
Collector-base voltage 2SA0719 VCBO −30 V
(Emitter open) 2SA0720 −60 0.45+0.15
–0.1 0.45+0.15
–0.1

Collector-emitter voltage 2SA0719 VCEO −25 V 2.5+0.6

–0.2 2.5+0.6
–0.2

(Base open) 2SA0720 −50

1 2 3 1: Emitter
Emitter-base voltage (Collector open) VEBO −5 V 2: Collector

2.3±0.2
3: Base
Collector current IC −500 mA EIAJ: SC-43A
Peak collector current ICP −1 A TO-92-B1 Package

Collector power dissipation PC 625 mW

Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage 2SA0719 VCBO IC = −10 µA, IE = 0 −30 V
(Emitter open) 2SA0720 −60
Collector-emitter voltage 2SA0719 VCEO IC = −10 mA, IB = 0 −25 V
(Base open) 2SA0720 −50
Emitter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0 −5 V
Collector-base cutoff current (Emitter open) ICBO VCB = −20 V, IE = 0 − 0.1 µA
Forward current transfer ratio hFE1 * VCE = −10 V, IC = −150 mA 85 340 
hFE2 VCE = −10 V, IC = −500 mA 40 
Collector-emitter saturation voltage VCE(sat) IC = −300 mA, IB = −30 mA − 0.35 − 0.60 V
Base-emitter saturation voltage VBE(sat) IC = −300 mA, IB = −30 mA −1.1 −1.5 V
Transition frequency fT VCB = −10 V, IE = 50 mA, f = 200 MHz 200 MHz
Collector output capacitance Cob VCB = −10 V, IE = 0, f = 1 MHz 6 15 pF
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank Q R S
hFE1 85 to 170 120 to 240 170 to 340

Note) The part numbers in the parenthesis show conventional part number.

Publication date: January 2003 SJC00002CED 1

2SA0719, 2SA0720

PC  Ta IC  VCE IC  I B
800 −1 200 −800
Ta = 25°C VCE = −10 V
Ta = 25°C
−700
Collector power dissipation PC (mW)

700
−1 000
−600

Collector current IC (mA)

Collector current IC (mA)

600
−800
500 IB = −1.0 mA −500
− 0.9 mA
− 0.8 mA
400 −600 − 0.7 mA −400
− 0.6 mA
− 0.5 mA
300 − 0.4 mA −300
−400
− 0.3 mA
200 −200
− 0.2 mA
−200
100 − 0.1 mA −100

0 0 0
0 20 40 60 80 100 120 140 160 0 −2 −4 −6 −8 −10 −12 0 −2 −4 −6 −8 −10
Ambient temperature Ta (°C) Collector-emitter voltage VCE (V) Base current IB (mA)

VCE(sat)  IC VBE(sat)  IC hFE  IC

−10 −100 600
IC / IB = 10 IC / IB = 10
Collector-emitter saturation voltage VCE(sat) (V)

VCE = −10 V
Base-emitter saturation voltage VBE(sat) (V)

500

Forward current transfer ratio hFE

−1 −10
400
Ta = 75°C
25°C
25°C
− 0.1 −1 Ta = −25°C 300
75°C Ta = 75°C
−25°C
200 25°C
−25°C
− 0.01 − 0.1
100

− 0.001 − 0.01 0
−1 −10 −100 −1 000 −1 −10 −100 −1 000 − 0.01 − 0.1 −1 −10
Collector current IC (mA) Collector current IC (mA) Collector current IC (A)

fT  I E Cob  VCB VCER  RBE

240 50 −120
C (pF)

VCB = −10 V IE = 0 IC = −2 mA
Ta = 25°C f = 1 MHz Ta = 25°C
(V)
(Common base, input open circuited) ob

200 Ta = 25°C −100

Transition frequency fT (MHz)

40
(Resistor between B and E) VCER

160 −80
30
Collector-emitter voltage
Collector output capacitance

120 −60
2SA0720
20
80 −40

2SA0719
10
40 −20

0 0 0
1 10 100 −1 −10 −100 1 10 100 1 000
Emitter current IE (mA) Collector-base voltage VCB (V) Base-emitter resistance RBE (kΩ)

2 SJC00002CED
 2SA0719, 2SA0720

ICEO  Ta Safe operation area

104 −10
VCE = −10 V Single pulse
Ta = 25°C

ICP
−1 t = 10 ms

Collector current IC (mA)

103 IC
t=1s
ICEO (Ta = 25°C)
ICEO (Ta)

102 − 0.1

10 − 0.01

1 − 0.001
0 40 80 120 160 200 − 0.1 −1 −10 −100
Ambient temperature Ta (°C) Collector-emitter voltage VCE (V)

SJC00002CED 3
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