PTB 20111 85 Watts, 860-900 MHZ Cellular Radio RF Power Transistor
PTB 20111 85 Watts, 860-900 MHZ Cellular Radio RF Power Transistor
PTB 20111 85 Watts, 860-900 MHZ Cellular Radio RF Power Transistor
PTB 20111
85 Watts, 860–900 MHz
Cellular Radio RF Power Transistor
Description
The 20111 is a class AB, NPN, common emitter RF power transistor 25 Volt, 860–900 MHz Characteristics
intended for 25 Vdc operation from 860 to 900 MHz. Rated at 85 - Output Power = 85 Watts
watts minimum output power, it may be used for both CW and PEP - Collector Efficiency = 50% at 85 Watts
applications. Ion implantation, nitride surface passivation and gold - IMD = -30 dBc Max at 60 W(PEP)
metallization are used to ensure excellent device reliability. 100% lot Class AB Characteristics
traceability is standard.
Gold Metallization
Silicon Nitride Passivated
80
Output Power (Watts)
60 2011
LOT1 COD
E
40
VCC = 25 V
20 ICQ = 200 mA
f = 900 MHz
0
0 4 8 12 16
Input Power (Watts) Package 20216
Maximum Ratings
9/28/98
This datasheet has been downloaded from http://www.digchip.com at this page
PTB 20111 e
Electrical Characteristics (100% Tested)
Z Source Z Load
2
e PTB 20111
Typical Performance
-24
10
IMD (dBc)
-28
Gain (dB)
9 VCC = 25 V
VCC = 25 V -32
ICQ = 200 mA
8 ICQ = 200 mA f1 = 899.95 MHz
-36
Pout = 85 W
f2 = 900.00 MHz
7 -40
860 870 880 890 900 20 30 40 50 60 70 80 90
Frequency (MHz) Output Power (Watts-PEP)
50 90
Efficiency (%)
40
80
30
70
20
VCC = 25 V
ICQ = 200 mA
ICQ = 200 mA
60 Pin = 10 W
10 f = 900 MHz
f = 900 MHz
0 50
45 50 55 60 65 70 75 80 85 90 18 20 22 24 26 28
Output Power (Watts) Vcc, Supply Voltage
Ericsson Components
RF Power Products 1-877-GOLDMOS Specifications subject to change without notice.
675 Jarvis Drive (1-877-465-3667) LF
Morgan Hill, CA 95037 USA e-mail: rfpower@ericsson.com © Ericsson Components AB 1995
Telephone: 408-778-9434 www.ericsson.com/rfpower EUS/KR 1301-PTB 20111 Uen Rev. D 09-28-98