Datasheet
Datasheet
Datasheet
PACKAGE SCHEMATIC
ANODE 1 6 GATE
6 6
CATHODE 2 5 ANODE
1
N/C 3 4 CATHODE
1
DESCRIPTION
The H11C series consists of a gallium-arsenide infrared emitting diode optically coupled with a light activated silicon controlled
rectifier in a dual-in-line package
FEATURES
• High efficiency, low degradation, liquid epitaxial LED
• Underwriters Laboratory (UL) recognized fl File #E90700
• VDE recognized (File #94766) – ordering option .300. (e.g., H11C1.300)
• 200V/400V Peak blocking voltage
• High isolation voltage - 5300V AC (RMS)
APPLICATIONS
• Low power logic circuits
• Telecommunications equipment
• Portable electronics
• Solid state relays
• Interfacing coupling systems of different potentials and impedances.
• 10 A, T2L compatible, solid state relay
• 25 W logic indicator lamp driver
• 200 V symmetrical transistor coupler (H11C1, H11C2, H11C3)
• 400 V symmetrical transistor coupler (H11C4, H11C5, H11C6)
ISOLATION CHARACTERISTICS
Characteristic Test Conditions Symbol Min Typ* Max Units
Isolation Voltage (t = 1 min.) (note 1) VISO 5300 V
Isolation Resistance (note 1) (VI-O = 500 VDC) RISO 1011 Ω
Isolation Capacitance (note 1) (f = 1 MHz, VI-O = 0) CI-O 0.8 pF
Note
1. For this test, LED pins 1 and 2 are common, and SCR pins 4, 5 and 6 are common.
Figure 1. LED Forward Current vs. Forward Voltage Figure 2. Trigger Current vs Anode-Cathode Voltage
100 100
R GK = 300 ohm
10 10
R GK = 1K
TA = 25˚C
R GK = 10K
TA = 100˚C TA = -40˚C
1 1 R GK = 27K
RGK = 56K
NORMALIZED TO
VAK = 50V
R GK = 10K
TA = 25oC
0.1 0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 1 10 100
Figure 3. Input Trigger Current vs. Temperature Figure 4. Off-State Current vs. Temperature
1000
I DM , OFF-STATE FORWARD CURRENT, NORMALIZED
IFT , INPUT TRIGGER CURRENT, NORMALIZED
R GK = 300 ohm
10
100
R GK = 1K
VAK = 400V
10
R GK = 10K
1
R GK = 27K
VAK = 200V
VAK = 50V
NORMALIZED TO R GK = 56K 1
TA = 25 oC
R GK = 10K
VAK = 50V NORMALIZED TO
0.1 TA = 25oC
-60 -40 -20 0 20 40 60 80 100
VAK = 50V
TA, AMBIENT TEMPERATURE ( oC) 0.1
0 20 40 60 80 100
o
T A, AMBIENT TEMPERATURE ( C)
650
V DM , FORWARD BLOCKING VOLTAGE (V)
R GK = 10K, 20K
550
R GK = 50K
500
R GK = 100K ˚
TA = 25 C
450
˚
TA = 100 C
10
400
350
300
0 20 40 60 80 100
o 1
TA , AMBIENT TEMPERATURE ( C) 0.0 0.5 1.0 1.5 2.0 2.5 3.0
RGK = 1K
IH , HOLDING CURRENT (µA)
1000
RGK = 10K
100
RGK = 27K
RGK = 56K
10
-60 -40 -20 0 20 40 60 80 100
o
T A, AMBIENT TEMPERATURE ( C)
TYPICAL APPLICATIONS
10A, T2L COMPATIBLE, SOLID
STATE RELAY LOAD
47 Ω
Use of the H11C4 for high sensitiv-
470 Ω 100 Ω
ity, 5300 V isolation capability, +5V
provides this highly reliable solid H11CX "CONTACT"
120 VAC (H11C1, H11C2, H11C3)
state relay design. This design is "COIL"
220 VAC (H11C4, H11C5, H11C6)
compatible with 74, 74S and 74H SC146D
0.1 µF
series T2L logic systems inputs 56K
and 120V AC (H11C1, H11C2,
H11C3) or 220V AC (H11C4,
IN5060 (4) 47 Ω
H11C5, H11C6) loads up to 10A.
56K 0.1 µF
H11CX
Use of the high voltage PNP portion of the H11C provides a 400V transistor capable of
conducting positive and negative signals with current transfer ratios of over 1%. This function INPUT OUTPUT
is useful in remote instrumentation, high voltage power supplies and test equipment. Care
should be taken not to exceed the H11C 400mW power dissipation rating when used at high
voltages.
+100 VAC
Vp = 800 Volts
tp = .010 Seconds
f = 25 Hertz 100 Ω
TA = 25 °C
H11C4
+
H
Vp
Vp .63 Vp
- 10 KΩ
tp dv / dt EXPONENTIAL OSCILLOSCOPE
RAMP GEN.
3 2 1 PIN 1
ID.
0.270 (6.86)
0.240 (6.10)
0.270 (6.86)
0.240 (6.10)
SEATING PLANE
0.350 (8.89)
4 5 6
0.330 (8.38)
0.020 (0.51)
0.154 (3.90) 0.020 (0.51)
MIN 0.016 (0.40) MIN
0.100 (2.54) MIN 0.022 (0.56)
0.016 (0.41) 0.100 (2.54) 0.315 (8.00)
0.016 (0.40) TYP MIN
0.008 (0.20) 0.405 (10.30)
0.022 (0.56) 0.300 (7.62) MAX
0° to 15° TYP
0.016 (0.41)
Lead Coplanarity : 0.004 (0.10) MAX
0.100 (2.54)
TYP
0.060 (1.52)
0.350 (8.89)
0.330 (8.38)
0.070 (1.78)
0.045 (1.14)
0.415 (10.54) 0.100 (2.54)
SEATING PLANE
0° to 15°
0.022 (0.56)
0.016 (0.41)
0.400 (10.16)
0.100 (2.54) TYP TYP
Note
All dimensions are in inches (millimeters)
ORDERING INFORMATION
MARKING INFORMATION
H11C1 2
6
V XX YY K
3 4 5
Definitions
1 Fairchild logo
2 Device number
VDE mark (Note: Only appears on parts ordered with VDE
3
option – See order entry table)
4 Two digit year code, e.g., ‘03’
5 Two digit work week ranging from ‘01’ to ‘53’
6 Assembly package code
7.5 ± 0.1
13.2 ± 0.2 16.0 ± 0.3
9.55 ± 0.20
NOTE
All dimensions are in inches (millimeters)
300
215°C, 10–30 s
250
Temperature (°C)
225 C peak
200
150
100 Time above 183°C, 60–150 sec • Peak reflow temperature: 225°C (package surface temperature)
• Time of temperature higher than 183°C for 60–150 seconds
50 Ramp up = 3C/sec • One time soldering reflow is recommended
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
Time (Minute)
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.