The transistor is subdivided into tow group, O and Y
and according to its DC current gain.
On special request, these transistors can be
manufactured in different pin configurations.
TO-92 Plastic Package
Weight approx. 0.19g
Absolute Maximum Ratings (T a = 25? )
Symbol Value Unit
Collector Base Voltage VCBO 35 V
Collector Emitter Voltage VCEO 30 V
Emitter Base Voltage VEBO 5 V Collector Current IC 800 mA
Emitter Current IE -800 mA
Power Dissipation Ptot 600 mW O Junction Temperature Tj 150 C O Storage Temperature Range TS -55 to +150 C
G S P FORM A IS AVAILABLE
Тел.: (495) 795-0805
Факс: (495) 234-1603 РАДИОТЕХ-ТРЕЙД Эл. почта: [email protected] Веб: www.rct.ru
® ST 2SC3203
Characteristics at Tamb=25 OC
Symbol Min. Typ. Max. Unit
DC Current Gain at VCE=1V, IC=100mA Current Gain Group O hFE 100 - 200 - Y hFE 160 - 320 - at VCE=1V, IC=700mA hFE 35 - - - Collector Cutoff Current at VCB=35V ICBO - - 0.1 µA Emitter Cutoff Current at VEB=5V IEBO - - 0.1 µA Collector Emitter Saturation Voltage at IC=500mA, IB=20mA VCE(sat) - - 0.5 V Transition Frequency at VCE=5V, IC=10mA fT - 120 - MHz Base Emitter Voltage at IC=10mA, VCE=1V VBE 0.5 - 0.8 V Collector Output Capacitance at VCB=10V, f=1MHz COB - 13 - pF Collector Emitter Breakdown Voltage at IC=10mA VCEO 30 - - V
G S P FORM A IS AVAILABLE
SEMTECH ELECTRONICS LTD.
(Subsidiary of Semtech International Holdings Limited, acompany listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002