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    Performance Analysis of Carbon Nanotube Interconnects For VLSI Applications

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    The document discusses carbon nanotube interconnects as a potential replacement for copper interconnects in VLSI applications. It examines the state-of-the-art in CNT interconnect research and discusses the advantages of CNTs over copper. Simulation results show that CNTs have lower propagation delay and average power consumption compared to copper.

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    Performance Analysis of Carbon Nanotube Interconnects For VLSI Applications

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    palakshi
    25 views8 pages
    The document discusses carbon nanotube interconnects as a potential replacement for copper interconnects in VLSI applications. It examines the state-of-the-art in CNT interconnect research and discusses the advantages of CNTs over copper. Simulation results show that CNTs have lower propagation delay and average power consumption compared to copper.

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    The document discusses carbon nanotube interconnects as a potential replacement for copper interconnects in VLSI applications. It examines the state-of-the-art in CNT interconnect research and discusses the advantages of CNTs over copper. Simulation results show that CNTs have lower propagation delay and average power consumption compared to copper.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    25 views8 pages

    Performance Analysis of Carbon Nanotube Interconnects For VLSI Applications

    Uploaded by

    palakshi
    The document discusses carbon nanotube interconnects as a potential replacement for copper interconnects in VLSI applications. It examines the state-of-the-art in CNT interconnect research and discusses the advantages of CNTs over copper. Simulation results show that CNTs have lower propagation delay and average power consumption compared to copper.

    Copyright:

    © All Rights Reserved
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    of 8

    Performance Analysis of

    Carbon Nanotube
    Interconnects for VLSI
    Applications
    Jayati Tibrewal
    174556, M. Tech (VLSI)
    Introduction
    A VLSI interconnect is a thin film of conducting material that provides electrical connection
    between two or more nodes of the circuit formed in the silicon chip. Earlier the most
    commonly used material was aluminium. The choice was based on its good conductivity and
    adherence on silicon dioxide. As device density increased with technology scaling,
    interconnect current density increased. A disadvantage with aluminium is that at high current
    densities considerable electro migration takes place. Later it was realized that copper a
    material of higher conductivity is several times more resistant to electro migration than
    aluminium. As the aggressive technology scaling continues a new problem is surfacing. With
    decrease in cross-section copper interconnect resistivity increases due to surface roughness
    and grain boundary scattering, causing increase in propagation delay, power dissipation and
    electro migration.
    To alleviate this problem, for interconnects of future generation chips alternative solutions
    are under consideration. Carbon Nanotubes (CNTs) are promising candidates that can
    potentially address the challenges faced by copper and thereby extend the lifetime of
    electrical interconnects. This report examines the state-of-the-art in CNT interconnect
    research and discusses both the advantages and challenges of this emerging nanotechnology.

    RLC Equivalent circuit of an Interconnect


    Problems of Existing Interconnect Systems

    ■ With continuous reduction of feature size there has been a parallel increase
    in die size. The result is more and more increase in length of some of the on-
    chip interconnects as technology scaling continues.
    ■ Any increase in interconnect length causes R, L and C to increase. This in turn
    results in an increase in interconnect signal propagation delay.
    ■ Besides increase in delay, interconnect power dissipation increases because
    of increased current density and increase in frequency of operation
    ■ The increased heating due to the rise in power dissipation assists electro
    migration.

    CNT INTERCONNECT
    An isolated SWCNT on ground plane is shown:-

    Carbon nanotube, of diameter ‘d’, distance ‘y’ below it.


    Resistance offered by CNT
    In the equivalent circuit, the resistance (Rf) is equally divided between the contacts at the
    two ends of the nanotube. For length less than mean free path of electrons and assuming
    ideal contact, it is given as :-
    R f = h/4e2
    Where,
    h is Planks constant
    e is electron charge
    If the tube length (L) is larger than mean free path (L0 ) then enhancement of scattering
    gives rise to an addition resistance. This resistance increases with increase in CNT length
    and is given as :-
    R CNT = (h/4e2)L/L0
    Thus, the resistance of a CNT has three components: the fundamental resistance Rf, the
    scattering resistance RCNT and the contact resistance at the two ends of the tube. CNT
    resistance is also bias dependent. At higher bias where electric field is very high current
    saturates and CNT does not show ohmic behavior. In the low bias regime on the other hand
    the CNTs show perfect ohmic behavior and are compatible with VLSI interconnect
    applications.

    Capacitance offered by CNT


    CNT has two capacitances :-
    - electrostatic capacitance (CE)

    - quantum capacitance (CQ)


    CQ = 2e2/(hvf)
    Where vf is the Fermi velocity
    NOTE :- As CNTs have four conducting channels, total effective quantum capacitance
    resulting from four parallel channel is 4CQ. When current flows both CE and 4CQ carry same
    charge. Thus, the two capacitances appear in series in the isolated SWCNT equivalent
    circuit.

    Inductance offered by CNT


    For a SWCNT, there are two types of inductances :-
    Magnetic inductance (LM)

    Kinetic inductance (Lk)

    Equivalent circuit of an Isolated SWCNT


    Propagation Delay Comparison

    Average Power Comparison


    Conclusion

    An overview of the exploratory research on CNT as possible VLSI interconnect is


    presented. The problem of continuing with copper interconnects in highly
    scaled technologies of future are briefly discussed. The works carried out in
    finding an alternative solution indicates that the CNT based interconnects have
    the potential to replace copper in future. Simulation result for SWCNT in terms
    of propagation delay and average power consumption has been shown.
    The results support the fact that CNT can be a promising replacement for
    copper as VLSI Interconnect.
    References
     N. Srivastava and K. Banerjee, “A Comparative Scaling Analysis of Metallic and Carbon Nanotube
    Interconnections for Nanometer Scale VLSI Technologies”, Proc. 21st Intl. VLSI Multilevel Interconnect
    Conf., 2004, pp. 393-398.
     M. Nihei, et al., “Carbon Nanotube Vias for Future LSI Interconnects,” IEEE Intl Interconnect Tech Conf,
    2004, pp. 251-253.
     Mayank Rai and Sankar Sarkar (2011). “Carbon Nanotube as a VLSI Interconnect, Electronic Properties
    of Carbon Nanotubes”, Prof. Jose Mauricio Marulanda (Ed.), InTech.
     P. L. McEuen, M. S. Fuhrer and H. Park, “Single-Walled Carbon Nanotube Electronics,” IEEE Trans.
    Nanotechnology, Vol. 1, No. 1, pp.78-85, 2002.
     Raychowdhury, A. and Kaushik, R., “Modelling of metallic carbon-nanotube interconnects for circuit
    simulations and a comparison with Cu interconnects for scaled technologies”, IEEE Transactions on
    Computer-Aided Design of Integrated Circuits and Systems, Vol. 25 No.1, pp. 58-65 2006.
     A. Naeemi and J. D. Meindl "Design and Performance Modeling for Single-Walled Carbon Nanotubes as
    Local Semiglobal and Global Interconnects in Gigascale Integrated Systems " Electron Devices IEEE
    Transactions on vol. 54 pp. 26-37 2007.

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