DATASHEET

CD4020BMS, CD4024BMS, CD4040BMS FN3300

CMOS Ripple-Carry BinaryCounter/Dividers Rev 1.00
October 1996

Features Pinouts
• High Voltage Types (20V Rating) CD4020BMS
TOP VIEW
• Medium Speed Operation
• Fully Static Operation
Q12 1 16 VDD
• Buffered Inputs and Outputs
Q13 2 15 Q11
• 100% Tested for Quiescent Current at 20V
Q14 3 14 Q10
• Standardized Symmetrical Output Characteristics
Q6 4 13 Q8
• Common Reset
Q5 5 12 Q9
• 5V, 10V and 15V Parametric Ratings
Q7 6 11 RESET
• Maximum Input Current of 1a at 18V Over Full Pack-
age-Temperature Range; Q4 7 10 

- 100nA at 18V and 25oC VSS 8 9 Q1

• Noise Margin (Over Full Package Temperature Range):

- 1V at VDD = 5V
- 2V at VDD = 10V
CD4024BMS
- 2.5V at VDD = 15V
TOP VIEW
• Meets All Requirements of JEDEC Tentative Standard
No. 13B, “Standard Specifications For Description Of
‘B’ Series CMOS Devices”  1 14 VDD

RESET 2 13 NC
Applications
Q7 3 12 Q1
• Control Counters Q6 4 11 Q2
• Timers
Q5 5 10 NC
• Frequency Dividers
Q4 6 9 Q3
• Time-Delay Circuits
VSS 7 8 NC

Description
NC = NO CONNECTION
CD4020BMS - 14 Stage
CD4024BMS - 7 Stage CD4040BMS
CD4040BMS - 12 Stage TOP VIEW

CD4020BMS, CD4024BMS, and CD4040BMS are ripple-

Q12 1 16 VDD
carry binary counters. All counter stages are master-slave
flip-flops. The state of a counter advances one count on the Q6 2 15 Q11
negative transition of each input pulse; a high level on the Q5 3 14 Q10
RESET line resets the counter to its all zeros state. Schmitt
Q7 4 13 Q8
trigger action on the input-pulse line permits unlimited rise
and fall times. All inputs and outputs are buffered. Q4 5 12 Q9
Q3 6 11 R
The CD4020BMS, CD4024BMS and the CD4040BMS is
supplied in these 14 lead outline packages: Q2 7 10 

VSS 8 9 Q1
CD4020B CD4024B CD4040B
Braze Seal DIP H4W H4Q H4X
Frit Seal DIP H1F H1B H1F
Ceramic Flatpack H6W H3W H6W

FN3300 Rev 1.00 Page 1 of 10

October 1996
CD4020BMS, CD4024BMS, CD4040BMS

Absolute Maximum Ratings Reliability Information

DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . . -0.5V to +20V Thermal Resistance . . . . . . . . . . . . . . . . ja jc
(Voltage Referenced to VSS Terminals) Ceramic DIP and FRIT Package . . . . . 80oC/W 20oC/W
Input Voltage Range, All Inputs . . . . . . . . . . . . . -0.5V to VDD +0.5V Flatpack Package . . . . . . . . . . . . . . . . 70oC/W 20oC/W
o
DC Input Current, Any One Input  10mA Maximum Package Power Dissipation (PD) at +125 C
Operating Temperature Range . . . . . . . . . . . . . . . -55oC to +125oC For TA = -55oC to +100oC (Package Type D, F, K) . . . . . 500mW
Package Types D, F, K, H For TA = +100oC to +125oC (Package Type D, F, K) . . . . . Derate
Storage Temperature Range (TSTG) . . . . . . . . . . -65oC to +150oC Linearity at 12mW/oC to 200mW
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . .+265oC Device Dissipation per Output Transistor . . . . . . . . . . . . . . . 100mW
At Distance 1/16 1/32 Inch (1.59mm  0.79mm) from case for 10s For TA = Full Package Temperature Range (All Package Types)
Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC

TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS

LIMITS
GROUP A
PARAMETER SYMBOL CONDITIONS (NOTE 1) SUBGROUPS TEMPERATURE MIN MAX UNITS
o
Supply Current IDD VDD = 20V, VIN = VDD or GND 1 +25 C - 10 A
2 +125oC - 1000 A
oC A
VDD = 18V, VIN = VDD or GND 3 -55 - 10
o
Input Leakage Current IIL VIN = VDD or GND VDD = 20 1 +25 C -100 - nA
2 +125oC -1000 - nA
VDD = 18V 3 -55oC -100 - nA
Input Leakage Current IIH VIN = VDD or GND VDD = 20 1 +25oC - 100 nA
2 +125oC - 1000 nA
o
VDD = 18V 3 -55 C - 100 nA
Output Voltage VOL15 VDD = 15V, No Load 1, 2, 3 +25oC, +125oC, -55oC - 50 mV
Output Voltage VOH15 VDD = 15V, No Load (Note 3) 1, 2, 3 +25oC, +125oC, -55oC 14.95 - V
o
Output Current (Sink) IOL5 VDD = 5V, VOUT = 0.4V 1 +25 C 0.53 - mA
Output Current (Sink) IOL10 VDD = 10V, VOUT = 0.5V 1 +25oC 1.4 - mA
Output Current (Sink) IOL15 VDD = 15V, VOUT = 1.5V 1 +25oC 3.5 - mA
Output Current (Source) IOH5A VDD = 5V, VOUT = 4.6V 1 +25oC - -0.53 mA
Output Current (Source) IOH5B VDD = 5V, VOUT = 2.5V 1 +25oC - -1.8 mA
Output Current (Source) IOH10 VDD = 10V, VOUT = 9.5V 1 +25oC - -1.4 mA
o
Output Current (Source) IOH15 VDD = 15V, VOUT = 13.5V 1 +25 C - -3.5 mA
N Threshold Voltage VNTH VDD = 10V, ISS = -10A 1 +25oC -2.8 -0.7 V
oC
P Threshold Voltage VPTH VSS = 0V, IDD = 10A 1 +25 0.7 2.8 V
o
Functional F VDD = 2.8V, VIN = VDD or GND 7 +25 C VOH > VOL < V
VDD/2 VDD/2
VDD = 20V, VIN = VDD or GND 7 +25oC
VDD = 18V, VIN = VDD or GND 8A +125oC
VDD = 3V, VIN = VDD or GND 8B -55oC
Input Voltage Low VIL VDD = 5V, VOH > 4.5V, VOL < 0.5V 1, 2, 3 +25oC, +125oC, -55oC - 1.5 V
(Note 2)
Input Voltage High VIH VDD = 5V, VOH > 4.5V, VOL < 0.5V 1, 2, 3 +25oC, +125oC, -55oC 3.5 - V
(Note 2)
Input Voltage Low VIL VDD = 15V, VOH > 13.5V, 1, 2, 3 +25oC, +125oC, -55oC - 4 V
(Note 2) VOL < 1.5V
Input Voltage High VIH VDD = 15V, VOH > 13.5V, 1, 2, 3 +25oC, +125oC, -55oC 11 - V
(Note 2) VOL < 1.5V

FN3300 Rev 1.00 Page 2 of 10

October 1996
CD4020BMS, CD4024BMS, CD4040BMS

TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS

LIMITS
GROUP A
PARAMETER SYMBOL CONDITIONS (NOTE 1) SUBGROUPS TEMPERATURE MIN MAX UNITS
NOTES: 1. All voltages referenced to device GND, 100% testing being im- 3. For accuracy, voltage is measured differentially to VDD. Limit is
plemented. 0.050V max.
2. Go/No Go test with limits applied to inputs

TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS

LIMITS
GROUP A
PARAMETER SYMBOL CONDITIONS (NOTE 1, 2) SUBGROUPS TEMPERATURE MIN MAX UNITS
o
Propagation Delay TPHL1 VDD = 5V, VIN = VDD or GND 9 +25 C - 360 ns
0 To Q1 TPLH1 o o
10, 11 +125 C, -55 C - 486 ns
o
Propagation Delay TPHL2 VDD = 5V, VIN = VDD or GND 9 +25 C - 330 ns
Qn To Qn + 1 TPLH2
10, 11 +125oC, -55oC - 446 ns
Propagation Delay TPLH3 VDD = 5V, VIN = VDD or GND 9 +25oC - 280 ns
Reset To Q TPHL3 o o
10, 11 +125 C, -55 C - 378 ns
o
Transition Time TTHL VDD = 5V, VIN = VDD or GND 9 +25 C - 200 ns
Q1 TTLH
10, 11 +125oC, -55oC - 270 ns
Maximum Clock Input Fre- FCL VDD = 5V, VIN = VDD or GND 9 +25oC 3.5 - MHz
quency oC,
10, 11 +125 -55oC 2.22 - MHz
NOTES:
1. VDD = 5V, CL = 50pF, RL = 200K
2. -55oC and +125oC limits guaranteed, 100% testing being implemented.

TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS

LIMITS
PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE MIN MAX UNITS
oC,
Supply Current IDD VDD = 5V, VIN = VDD or GND 1, 2 -55 +25oC - 5 A
+125oC - 150 A
o o
VDD = 10V, VIN = VDD or GND 1, 2 -55 C, +25 C - 10 A
oC
+125 - 300 A
VDD = 15V, VIN = VDD or GND 1, 2 -55oC, +25oC - 10 A
+125oC - 600 A
o o
Output Voltage VOL VDD = 5V, No Load 1, 2 +25 C, +125 C, - - 50 mV
55oC
Output Voltage VOL VDD = 10V, No Load 1, 2 +25oC, +125oC, - - 50 mV
55oC
Output Voltage VOH VDD = 5V, No Load 1, 2 +25oC, +125oC, - 4.95 - V
55oC
Output Voltage VOH VDD = 10V, No Load 1, 2 +25oC, +125oC, - 9.95 - V
55oC
Output Current (Sink) IOL5 VDD = 5V, VOUT = 0.4V 1, 2 +125oC 0.36 - mA
o
-55 C 0.64 - mA
oC
Output Current (Sink) IOL10 VDD = 10V, VOUT = 0.5V 1, 2 +125 0.9 - mA
-55oC 1.6 - mA
Output Current (Sink) IOL15 VDD = 15V, VOUT = 1.5V 1, 2 +125oC 2.4 - mA
o
-55 C 4.2 - mA

FN3300 Rev 1.00 Page 3 of 10

October 1996
CD4020BMS, CD4024BMS, CD4040BMS

TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)

LIMITS
PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE MIN MAX UNITS
Output Current (Source) IOH5A VDD = 5V, VOUT = 4.6V 1, 2 +125oC - -0.36 mA
-55oC - -0.64 mA
Output Current (Source) IOH5B VDD = 5V, VOUT = 2.5V 1, 2 +125oC - -1.15 mA
o
-55 C - -2.0 mA
Output Current (Source) IOH10 VDD = 10V, VOUT = 9.5V 1, 2 +125oC - -0.9 mA
oC
-55 - -1.6 mA
o
Output Current (Source) IOH15 VDD =15V, VOUT = 13.5V 1, 2 +125 C - -2.4 mA
-55oC - -4.2 mA
Input Voltage Low VIL VDD = 10V, VOH > 9V, VOL < 1V 1, 2 +25oC, +125oC, - - 3 V
55oC
Input Voltage High VIH VDD = 10V, VOH > 9V, VOL < 1V 1, 2 +25oC, +125oC, - 7 - V
55oC
Propagation Delay TPHL1 VDD = 10V 1, 2, 3 +25oC - 160 ns
Input To Q1 TPLH1 oC
VDD = 15V 1, 2, 3 +25 - 130 ns
o
Propagation Delay TPHL2 VDD = 10V 1, 2, 3 +25 C - 80 ns
QN To QN + 1 TPLH2
VDD = 15V 1, 2, 3 +25oC - 60 ns
oC
Propagation Delay TPHL3 VDD = 10V 1, 2, 3 +25 - 120 ns
Reset To Q
VDD = 15V 1, 2, 3 +25oC - 100 ns
oC
Transition Time TTHL VDD = 10V 2, 3 +25 - 100 ns
TTLH o
VDD = 15V 2, 3 +25 C - 80 ns
Maximum Clock Input Fre- FCL VDD = 10V 1, 2, 3 +25oC 8 - MHz
quency
VDD = 15V 1, 2, 3 +25oC 12 - MHz
o
Minimum Reset Pulse TW VDD = 5V 1, 2, 3 +25 C - 200 ns
Width
VDD = 10V 1, 2, 3 +25oC - 80 ns
o
VDD = 15V 1, 2, 3 +25 C - 60 ns
o
Reset Removal Time TREM VDD = 5V 1, 2, 3 +25 C - 350 ns
VDD = 10V 1, 2, 3 +25oC - 150 ns
oC
VDD = 15V 1, 2, 3 +25 - 100 ns
o
Minimum Input Pulse TW VDD = 5V 1, 2, 3 +25 C - 140 ns
Width
VDD = 10V 1, 2, 3 +25oC - 60 ns
oC
VDD = 15V 1, 2, 3 +25 - 40 ns
o
Input Capacitance CIN Any Input 1, 2 +25 C - 7.5 pF
NOTES:
1. All voltages referenced to device GND.
2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized on initial
design release and upon design changes which would affect these characteristics.
3. CL = 50pF, RL = 200K, Input TR, TF < 20ns.

TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS

LIMITS
PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE MIN MAX UNITS
Supply Current IDD VDD = 20V, VIN = VDD or GND 1, 4 +25oC - 25 A
o
N Threshold Voltage VNTH VDD = 10V, ISS = -10A 1, 4 +25 C -2.8 -0.2 V

FN3300 Rev 1.00 Page 4 of 10

October 1996
CD4020BMS, CD4024BMS, CD4040BMS

TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)

LIMITS
PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE MIN MAX UNITS
N Threshold Voltage VTND VDD = 10V, ISS = -10A 1, 4 +25oC - 1 V
Delta
P Threshold Voltage VTP VSS = 0V, IDD = 10A 1, 4 +25oC 0.2 2.8 V
P Threshold Voltage VTPD VSS = 0V, IDD = 10A 1, 4 +25oC - 1 V
Delta
Functional F VDD = 18V, VIN = VDD or GND 1 +25oC VOH > VOL < V
VDD/2 VDD/2
VDD = 3V, VIN = VDD or GND
Propagation Delay Time TPHL VDD = 5V 1, 2, 3, 4 +25oC - 1.35 x ns
TPLH +25oC
Limit
NOTES: 1. All voltages referenced to device GND. 3. See Table 2 for +25oC limit.
2. CL = 50pF, RL = 200K, Input TR, TF < 20ns. 4. Read and Record

TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25OC

PARAMETER SYMBOL DELTA LIMIT

Supply Current - MSI-2 IDD  1.0A
Output Current (Sink) IOL5  20% x Pre-Test Reading
Output Current (Source) IOH5A  20% x Pre-Test Reading

TABLE 6. APPLICABLE SUBGROUPS

MIL-STD-883
CONFORMANCE GROUP METHOD GROUP A SUBGROUPS READ AND RECORD
Initial Test (Pre Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A
Interim Test 1 (Post Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A
Interim Test 2 (Post Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A
PDA (Note 1) 100% 5004 1, 7, 9, Deltas
Interim Test 3 (Post Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A
PDA (Note 1) 100% 5004 1, 7, 9, Deltas
Final Test 100% 5004 2, 3, 8A, 8B, 10, 11
Group A Sample 5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11
Group B Subgroup B-5 Sample 5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas Subgroups 1, 2, 3, 9, 10, 11
Subgroup B-6 Sample 5005 1, 7, 9
Group D Sample 5005 1, 2, 3, 8A, 8B, 9 Subgroups 1, 2 3
NOTE: 1. 5% Parameteric, 3% Functional; Cumulative for Static 1 and 2.

TABLE 7. TOTAL DOSE IRRADIATION

TEST READ AND RECORD

MIL-STD-883
CONFORMANCE GROUPS METHOD PRE-IRRAD POST-IRRAD PRE-IRRAD POST-IRRAD
Group E Subgroup 2 5005 1, 7, 9 Table 4 1, 9 Table 4

TABLE 8. BURN-IN AND IRRADIATION TEST CONNECTIONS

OSCILLATOR
FUNCTION OPEN GROUND VDD 9V  -0.5V 50kHz 25kHz
PART NUMBER CD4020BMS

FN3300 Rev 1.00 Page 5 of 10

October 1996
CD4020BMS, CD4024BMS, CD4040BMS

TABLE 8. BURN-IN AND IRRADIATION TEST CONNECTIONS (Continued)

OSCILLATOR
FUNCTION OPEN GROUND VDD 9V  -0.5V 50kHz 25kHz
Static Burn-In 1 1 - 7, 9, 12 - 15 8, 10, 11 16
Note 1
Static Burn-In 2 1 - 7, 9, 12 - 15 8 10, 11, 16
Note 1
Dynamic Burn- - 8, 11 16 1 - 7, 9, 12 - 15 10
In Note 1
Irradiation 1 - 7, 9, 12 - 15 8 10, 11, 16
Note 2
PART NUMBER CD4024BMS
Static Burn-In 1 3 - 6, 8 - 13 1, 2, 7 14
Note 1
Static Burn-In 2 3 - 6, 8 - 13 7 1, 2, 14
Note 1
Dynamic Burn- 8, 10, 13 2, 7 14 3 - 6, 9, 11, 12 1
In Note 1
Irradiation 3 - 6, 8 - 13 7 1, 2, 14
Note 2
PART NUMBER CD4040BMS
Static Burn-In 1 1 - 7, 9, 12 - 15 8, 10, 11 16
Note 1
Static Burn-In 2 1 - 7, 9, 12 - 15 8 10, 11, 16
Note 1
Dynamic Burn- - 8, 11 16 1 - 7, 9, 12 - 15 10
In Note 1
Irradiation 1 - 7, 9, 12 - 15 8 10, 11, 16
Note 2
NOTE:
1. Each pin except VDD and GND will have a series resistor of 10K  5%, VDD = 18V  0.5V
2. Each pin except VDD and GND will have a series resistor of 47K 5%; Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures,
VDD = 10V  0.5V

Functional Diagrams

VDD VDD VDD

16 14 16

10 9 Q1 10 9 Q1
INPUT 7 Q4 12 INPUT 7 Q2
PULSES Q1 PULSES
5 Q5 6 Q3
12 BUFFERED OUTPUTS

12 BUFFERED OUTPUTS

1 11
7 BUFFERED OUTPUTS

14 STAGE 4 Q6 7 STAGE Q2 12 STAGE 5 Q4

INPUT
RIPPLE 6 Q7 PULSES RIPPLE 9 RIPPLE 3 Q5
COUNTER COUNTER Q3 COUNTER
13 Q8 2 Q6
2 6
12 Q9 RESET Q4 4 Q7
14 Q10 5 13 Q8
Q5
15 Q11 12 Q9
4
1 Q12 Q6 14 Q10
2 Q13 3 15 Q11
11 3 Q14 Q7 11 1 Q12
RESET RESET
8 7 8
VSS NC = 8, 10, 13 VSS VSS

CD4020BMS CD4024BMS CD4040BMS

FN3300 Rev 1.00 Page 6 of 10

October 1996
CD4020BMS, CD4024BMS, CD4040BMS

Logic Diagrams

Ø1 Q1 Ø2 Q2 Ø3 Q13 Ø14 Q14

FF1 FF2 FF14

Ø*
Ø1 Q1 Ø2 Q2 Ø3 Q13 Ø14 Q14
R*
R Q1 R R

FF3 - FF13
VDD
*INPUTS PROTECTED
BY COS/MOS PROTECTION
NETWORK

Q1 Q4 Q13 Q14

VSS
FIGURE 1. LOGIC DIAGRAM FOR CD4020BMS

Ø1 Q1 Ø2 Q2 Ø3 Q6 Ø7 Q7

FF1 FF2 FF14

Ø*
Ø1 Q1 Ø2 Q2 Ø3 Q6 Ø7 Q7
R*
R Q1 R R

FF3 - FF6
VDD
*INPUTS PROTECTED
BY COS/MOS PROTECTION
NETWORK

Q1 Q2 Q3 Q6 Q7

VSS
FIGURE 2. LOGIC DIAGRAM FOR CD4024BMS

Ø1 Q1 Ø2 Q2 Ø3 Q11 Ø7 Q12

FF1 FF2 FF12

Ø*
Ø1 Q1 Ø2 Q2 Ø3 Q11 Ø7 Q12
R*
R Q1 R R

FF3 - FF11
VDD
*INPUTS PROTECTED
BY COS/MOS PROTECTION
NETWORK

Q1 Q2 Q3 Q11 Q12

VSS

FIGURE 3. LOGIC DIAGRAM FOR CD4040BMS

FN3300 Rev 1.00 Page 7 of 10

October 1996
CD4020BMS, CD4024BMS, CD4040BMS

Typical Performance Characteristics

AMBIENT TEMPERATURE (TA) = +25oC AMBIENT TEMPERATURE (TA) = +25oC

OUTPUT LOW (SINK) CURRENT (IOL) (mA)

OUTPUT LOW (SINK) CURRENT (IOL) (mA)

30 GATE-TO-SOURCE VOLTAGE (VGS) = 15V 15.0
GATE-TO-SOURCE VOLTAGE (VGS) = 15V
25 12.5

20 10.0

10V
15 7.5
10V

10 5.0

5 2.5
5V 5V

0 5 10 15 0 5 10 15
DRAIN-TO-SOURCE VOLTAGE (VDS) (V) DRAIN-TO-SOURCE VOLTAGE (VDS) (V)
FIGURE 4. TYPICAL OUTPUT LOW (SINK) CURRENT FIGURE 5. MINIMUM OUTPUT LOW (SINK) CURRENT
CHARACTERISTICS CHARACTERISTICS

DRAIN-TO-SOURCE VOLTAGE (VDS) (V) DRAIN-TO-SOURCE VOLTAGE (VDS) (V)

-15 -10 -5 0 -15 -10 -5 0
0 0
AMBIENT TEMPERATURE (TA) = +25oC AMBIENT TEMPERATURE (TA) = +25oC

OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA)

OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA)

GATE-TO-SOURCE VOLTAGE (VGS) = -5V -5 GATE-TO-SOURCE VOLTAGE (VGS) = -5V

-10 -5

-15

-10V -10V
-20 -10

-25

-15V -15V
-30 -15

FIGURE 6. TYPICAL OUTPUT HIGH (SOURCE) CURRENT CHAR- FIGURE 7. MINIMUM OUTPUT HIGH (SOURCE) CURRENT CHAR-
ACTERISTICS ACTERISTICS

FN3300 Rev 1.00 Page 8 of 10

October 1996
CD4020BMS, CD4024BMS, CD4040BMS

Typical Performance Characteristics (Continued)

PROPAGATION DELAY TIME (tPHL, tPLH) (ns)

AMBIENT TEMPERATURE (TA) = +25oC AMBIENT TEMPERATURE (TA) = +25oC
TRANSITION TIME (tTHL, tTLH) (ns)

300
200

( TO Q1)
SUPPLY VOLTAGE (VDD) = 5V SUPPLY VOLTAGE (VDD) = 5V
150 200

100
10V 10V
100
15V
50
15V

0
0 20 40 60 80 100 0 20 40 60 80 100
LOAD CAPACITANCE (CL) (pF) LOAD CAPACITANCE (CL) (pF)

FIGURE 8. TYPICAL TRANSITION TIME AS A FUNCTION OF FIGURE 9. TYPICAL PROPAGATION DELAY TIME AS A
LOAD CAPACITANCE FUNCTION OF LOAD CAPACITANCE ( TO Q1))

105 8
6 AMBIENT TEMPERATURE (TA) = +25oC
4
R
2
  * Q1
SUPPLY VOLTAGE (VDD) = 5V
POWER DISSIPATION (PD) (W)

104 8 p p
6
4
10V n R n R Q
2

103 10V  
8
6  
4
5V

2
p p
2 Q
10 8 CD = 15pF n n
6
4
CL = 50pF
 
2

10
2 4 68 2 4 68 2 4 68 2 4 68 2 4 68 * ON FIRST STAGE ONLY
1 10 102 103 104 105
INPUT PULSE FREQUENCY (f) (kHz)

FIGURE 11. DETAIL OF TYPICAL FLIP-FLOP STAGES

FIGURE 10. TYPICAL DYNAMIC POWER DISSIPATION AS A
FUNCTION OF INPUT PULSE FREQUENCY FOR
CD4020BMS

FN3300 Rev 1.00 Page 9 of 10

October 1996
CD4020BMS, CD4024BMS, CD4040BMS

Chip Dimensions and Pad Layouts

Dimensions in parentheses are in millimeters

and are derived from the basic inch dimensions
as indicated. Grid graduations are in mils (10-3 inch)

DIMENSIONS AND PAD LAYOUT FOR CD4020BMS. DIMENSIONS DIMENSIONS AND PAD LAYOUT FOR CD4024BMSH
AND PAD LAYOUT FOR CD4040BMS ARE IDENTICAL

METALLIZATION: Thickness: 11kÅ 14kÅ, AL.

PASSIVATION: 10.4kÅ - 15.6kÅ, Silane
BOND PADS: 0.004 inches X 0.004 inches MIN
DIE THICKNESS: 0.0198 inches - 0.0218 inches

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in the quality certifications found at www.intersil.com/en/support/qualandreliability.html
Intersil products are sold by description only. Intersil may modify the circuit design and/or specifications of products at any time without notice, provided that such
modification does not, in Intersil's sole judgment, affect the form, fit or function of the product. Accordingly, the reader is cautioned to verify that datasheets are
current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its
subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com

FN3300 Rev 1.00 Page 10 of 10

October 1996