EE 290C

CMOS Analog Design Using

All-region MOSFET Modeling

Carlos Galup-Montoro

Univ. of Santa Catarina, Brazil; UC Berkeley

373 Cory Hall
[email protected]
http://eel.ufsc.br/~lci/faculty.html
290C Basics

Course Format: Two hours of lecture and one hour

of project discussion per week

Prerequisites: EE140 Linear Integrated Circuits or

equivalent

Grading Policy: Homework 50% + Project 50%

Textbook: CMOS Analog Design Using All-region

MOSFET Modeling, M. C. Schneider and C. Galup-
Montoro, Cambridge University Press, 2009
CMOS Analog Design Using All Region MOSFET Modeling 2
 Analog Bipolar and MOS Circuits

Bipolar and MOS

A. B. Grebene, Bipolar and MOS Analog Integrated Circuit Design, 1983.

K. R. Laker and W. M. C. Sansen, Design of Analog Integrated Circuits and
Systems, 1994.
D. A. Johns and K. Martin, Analog Integrated Circuit Design, 1997.
P. R. Gray, P. J. Hurst, S. H. Lewis, and R. G. Meyer, Analysis and Design of
Analog Integrated Circuits, Fourth Edition, 2001.
W. M. C. Sansen, Analog Design Essentials, Springer, Dordrecht, 2006

MOS
B. Razavi, Design of Analog CMOS Integrated Circuits, 2001.
F. Maloberti, Analog Design for CMOS VLSI Systems, 2001.
P. E. Allen and D. R. Holberg, CMOS Analog Circuit Design, 2002.
CMOS Analog Design Using All Region MOSFET Modeling 3
Important Differences between Bipolar
Transistors (BJTs) and MOSFETs

A) BJTs are three-terminal devices and MOSFETs are four-

terminal devices

B) Differences in the internal symmetries of the most

commonly used BJTs and MOSFETs

C) BJT exponential current law vs. MOS current law

D) The geometric degrees of freedom for MOSFETs in

analog design

E) Quality of BJT and MOSFET models

CMOS Analog Design Using All Region MOSFET Modeling 4

Ebers-Moll Equivalent Circuit of an npn
Transistor
Forward and reverse currents

IE
IC
R IR FIF

E DE DC C

IF IR

IC = F I F I R IB

IE = R IR IF B

I B = ( I C + I E ) = (1 F ) I F + (1 R ) I R
5

CMOS Analog Design Using All Region MOSFET Modeling

The Capacitive Model of the MOS
Structure

VGB VGB
depletion
region Cox
s ds Cox 1
s = =
dVGB Cox + Cb n
p- type neutral Cb
region

CMOS Analog Design Using All Region MOSFET Modeling 6

 MOSFET: Symmetric Strong and Weak
Inversion Models

Strong inversion VSB

VGB
VDB

ID

ID = IF IR
n+ n+

2
IF (R) =
2n
(V
GB nVSB ( DB ) VT 0 ) p-type substrate

(b)
W

weak inversion = Cox
L

W (VGB VT 0 nVSB ) / nt
I D = I F I R = I0
L
e ( e( GB T 0 DB ) t
V V nV / n
) 7
CMOS Analog Design Using All Region MOSFET Modeling
Intrinsic Gain Stages: (a) Common-
Source and (b) Common-Emitter
Amplifiers

CMOS Analog Design Using All Region MOSFET Modeling 8

Small-Signal Circuit and Frequency
Response of the Amplifiers

gm
vo vi
jCL
>> b
9
CMOS Analog Design Using All Region MOSFET Modeling
 Design of Common-Emitter and
Common-Source Amplifiers
Av (u ) = 1 g m = u C L = 2 .G B W .C L

BJT VBE /t
IC = I S e I C = g mt = 2 .GBW .CL .t

MOSFET

1 W 2 ng m2
I Dsi = Cox (VGB VT 0 nVSB )
I Dsi =
2n L 2 Cox (W / L )
CMOS Analog Design Using All Region MOSFET Modeling 10
Example: GBW = 10 MHz, CL = 10 pF
Cox = 8010-6 A/V2, n = 1.35
g m = 2 .GBW .CL = 628 A / V

W/L A)1
IDsi ( A)2
ID (
0 22
500 6.6 28.6
100 33.2 55.2
50 66.4 88.4
10 332 354
1Strong inversion model. 2 Accurate all-
region MOSFET model
CMOS Analog Design Using All Region MOSFET Modeling 11
All Region Empirical Model of the
MOSFET

I D = 22 A + I Dsi
IWI = ng mt = 1.35 628 106.26 103 = 22 A

gm
I D = IWI + I Dsi = ng mt 1 +
2 Cox t (W / L )
(W / L )th
I D = IWI 1 + g m = (W / L )th ( 2Cox t )
(W / L )
12
CMOS Analog Design Using All Region MOSFET Modeling
Aspect Ratio vs. Current Excess in a
MOSFET Design

(W / L )th
I D = IWI 1 +
(W / L )

CMOS Analog Design Using All Region MOSFET Modeling 13

Consistent Modeling of FETs: Use of
Series Associations of FETs
D
ID
MD
WD
LD

W
G X I = ( ) [g( V , V ) - g( V , V )]
D L eq G S G D
WS
LS
MS W W
(
) D ( )S
W L L
S B ( ) eq =
L W W
( ) D + ( )S
L L

CMOS Analog Design Using All Region MOSFET Modeling 14

Series-Parallel Associations of FETs

CMOS Analog Design Using All Region MOSFET Modeling 15

 Series Associations of FETs vs. Long
Channel MOSFETs

Series association Long-channel

nominal VT L-dependent VT

Characterize one L-dependent characterization

transistor ( performance (halo/pocket implants effects)
of the shortest transistor
is optimized)
accurate for current L-dependent accuracy
mirrors
Gate current more
predictable CMOS Analog Design Using All Region MOSFET Modeling 16
 Iin M : 1
Application of Series aj, VTaj
IOut
M A B VTB
Parallel Associations of FETs- Ma
VG MB

Three M:1 Current Mirrors MA = M parallel Ma transistors (a)

a) M :1 N2 : 1 MB
IOut

Iin
N
MA Mb2
VG
Ma1

B) N=M, N:1/N N
(b)

MB IOut

Iin M : 1
Mb N

C) M: N/N MA
Ma

M N
(c)

CMOS Analog Design Using All Region MOSFET Modeling 17

Current Mismatch in Two M:1 Current
Mirrors

Arnaud, JSSC Sep. 06

18
CMOS Analog Design Using All Region MOSFET Modeling
M-2M Digital-to-Analog Converter 1:
Mbb can be substituted by set of four transistors

ID1 ID2

Mc Md

ID

Mbc Mbd

VG Ma Mba Mbb

ID1 ID2a ID2b

CMOS Analog Design Using All Region MOSFET Modeling 19

 M-2M Digital-to-Analog Converter 2:
8 bit DAC with M-2M Ladder
IB VB VR IR

MB1 M71 M61 M64 M01 M04 M00

MB2 M72 M73 M62 M63 M02 M03

Q7 -Q7 Q6 -Q6 Q0 -Q0
-Q7 Q7 -Q6 Q6 -Q0 Q0

I0
V0
IG
GB VG
Q7 Q6 Q1 Q0

Di D Q D Q D Q D Q Do

ck ck ck ck
Ck

CMOS Analog Design Using All Region MOSFET Modeling 20

M-2M Digital-to-Analog Converter 3:
Normalized current mismatch for a 10 m x 10 m
transistor

CMOS Analog Design Using All Region MOSFET Modeling 21

M-2M Digital-to-Analog Converter 4

Standard deviation of the measured error from 20

samples of DAC0 CMOS Analog Design Using All Region MOSFET Modeling 22
 M-2M Digital-to-Analog Converter 5

Klimach. ISCAS 08

Top area is the M-2M ladder and the bottom area is the
serial register. CMOS Analog Design Using All Region MOSFET Modeling 23
290C Course Outline

- MOSFET modeling (3 weeks)

- Mismatch and noise (2 weeks)

- Basic CMOS building blocks (5 weeks)

- Op amps ( 4 weeks)

24
CMOS Analog Design Using All Region MOSFET Modeling
290C Learning Goals

Understand and use an all-region ( accumulation,

WI, MI and SI) compact MOSFET model for analog
design

Acquire a deep understanding ( nonlinearities,
noise, mismatch) of the basic CMOS build blocks
and op amps

Apply the above concepts in a design project

25
CMOS Analog Design Using All Region MOSFET Modeling
Similar Approaches to CMOS Design

Paul G. A. Jespers; The gm/ID Design Methodology for CMOS

Analog Low Power Integrated Circuits
2009, ISBN: 978-0-387-47100-6

D. M. Binkley; Tradeoffs and Optimization in Analog CMOS

Design ISBN: 978-0-470-03136-0, Wiley 2008.

Danica Stefanovic and Maher Kayal; Structured Analog CMOS

Design Series: Analog Circuits and Signal Processing
2009, ISBN: 978-1-4020-8572-7

CMOS Analog Design Using All Region MOSFET Modeling 26