Lecture26 PDF

6.7205/3.
435 - Integrated Microelectronic Devices
Spring 2007
Lecture 26-1
Lecture 26 - The "Long"

Metal-Oxide-Semiconductor Field-Effect
Transistor (cont.)
April 11, 2007
Contents:
I. Current-voltage characteristics of ideal MOSFET (cont.)
2. Charge-voltage characteristics of ideal MOSFET
Reading assignment:
del Alamo, Ch. 9, 559.4 (9.4.3-9.4.5): 9.5
Cite as: leslis del Alamo, course materials for 6.7201 Integrated Microelectronic Devices, Spring 2007.
MIT OpenCourseWare (http://ocw.mit.edu/), Massachusetts Institute of Technology. Downloaded on [DD Month W]
6.7205/3.435 - Integrated Microelectronic Devices
Spring 2007
Lecture 26-2
Key questions
Why does the drain current in a MOSFET saturate

at high VDs?
What charges should we keep track of as we construct
a model for the charge-voltage characteristics of the
MOSFET?
Spring 2007
Lecture 26-3
1. I-V characteristics of ideal MOSFET (cont.)
Problems with MOSFET current model for linear regime

as VDs approaches VGS - VT.
Problems centered around g = L:
Local gate overdrive goes to zero
can current be supported?
+ lQil
0. How
Gradual-channel approximation becomes invalid.

Sheet-charge approximation becomes invalid.
Lateral field so large that linearity between field and
velocity invalid.
Model that can handle VDs values all the way up to VGSVT is rather complicated; but ... actually, don't need new
model!
Reason: when VDs approaches VGS- VT, IDchanges very
little due to prominent debiasing on the drain side of the
channel.
Spring 2007
Lecture 26-4
Ask a different question: how close can VDs get to VGSVT before simple model fails?
Answer:
up to about 80% of VGS - VT
which means up to about 96% of ID,,,.
Hence, simple model is pretty good up to VDs
VT.
VGS -
6.720J/3.43J
Integrated Microelectronic Devices
Spring 2007
Lecture 26-5
What happens if VDs reaches or exceeds VGS - VT?

Electron concentration at y = L drops to very small concentrations + depletion region appears at y = L: pinch08.
Depletion region is no barrier to electron flow: field "pulls"

electrons into drain.
--7
inversion
I
I
I
/T - - - ........,
layer
depletion
region
----.....--
'.---...
P
pinch-off point " - - - - -
drain
a) linear regime VDS<VDS,,~
---...
pinch-off region
b) pinch-off VDS=VDS,,~
c) saturation regime VDS>VDS,,~
As VDs exceeds VGS - VT,

depletion region widens into channel underneath gate;
all extra voltage consumed in depletion region;
electrostatics of channel, to first order, unperturbed;
channel current unchanged
tion.
+ MOSFET in
satura-
C ~ t eas: Jeslis del Alamo, course materials for 6.7201 Integrated M~croelectron~c
Dev~ces,S p r ~ n g2007.
MIT OpenCourseWare (http://ocw.m~t.edu/), Massachusetts I n s t ~ t u t eof Technology. Downloaded on [DD Month W]
6.720J/3.43J
Integrated Microelectronic Devices
Spring 2007
Lecture 26-6
Lateral electrostatics in saturation:
local gate
overdrive
C ~ t eas: leslis del Alarno, course rnater~alsfor 6.7201 Integrated M~croelectron~c

Dev~ces,Spr~ng2007.
MIT OpenCourseWare (http://ocw.rn~t.edu/), Massachusetts I n s t ~ t u t eof Technology. Downloaded on [DD Month W]
Spring 2007
Lecture 26-7
Current model in saturation:
IDdoes not increase passed VDs
VGS - VT. Hence,
VDs at which transistor saturates is denoted as VDssat:
Current-voltage characteristics:
6.7205/3.435 - htegrated Microelectronic Devices - Spring 2007
Lecture 26-8
Why square dependence?
VGS T+ VDSsat
T+ higher lateral field in channel at
saturation.
Cite as: Jess del Alamo, course materials for 6.720J Integrated Microelectronic Devices, Spring 2007.
MIT OpenCourseWare (http://ocw.mit.edu/), Massachusetts Institute of Technology. Downloaded on [DD Month YYYY].
Lecture 26-9
6.7205/3.435 - h tegrated Microelectronic Devices - Spring 200 7
LI
Energy band diagrams (VGS> VT):
channel
S
D
Ec
EF ------------------------------------------ Efe----- ------_=, ----------_ --.
----__________ - - - -t ~ V D S
...........------
VDS=O
O<VDs<VDssat
a) linear
b) linear
VDS=~DSS~~
c) pinch-off
VDs>VDssat
d) saturation
Pinch-off point: region of "free fall" of electrons.
6 720J/3 4 3 J - Integrated Microelectronic Devices - Spring 2007
Lecture 26-10
2. Charge-voltage characteristics of ideal
MOSFET
Two types of stored charge in a MOSFET:
depletion charge in:
source-body pn junction
- drain-body pn junction
- MOS structure
-
inversion charge
vBS
- - - - - - - - --
I,
;;ision
depletion I
region
'. - - - - - - - - -
Clte as: leslis del Alarno, course rnaterlals for 6.7203 Integrated M~croelectron~c
Devlces, Sprlng 2007.
MIT OpenCourseWare (http://ocw.mlt.edu/), Massachusetts Institute of Technology. Downloaded on [DD Month W]
6 720J/3 43J- Integrated M~croelectronicDevlces - Spring 2007
Source-body junction depletion charge (assume strongly

asymmetric junction) :
with
Clte as: les6s del Alamo, course materials for 6.7201 Integrated M~croelectron~c
Devlces, Spring 2007.
MIT OpenCourseWare (http://ocw,mlt.edu/), Massachusetts Institute of Technology. Downloaded on [DD Month W].
6.7205/3.435 - Integrated IlIicroelectronic Devices - Spring 2007
Lecture 26-12
Drain-body j~~nction
depletion charge (assume strongly
asymmetric junction) :
with
6.7205/3.435 - Integmted Microelectronic Devices
EI
Spring 2007
Lecture 26-13
MOS depletion charge:
In cut-off (VGs < VT):

There is no inversion layer. But there is a depletion layer:
Increases with VGS.

In linear and saturation regimes (VGS > VT):
Independent of VGS.
MIT Opencourseware (http://ocw.mit.edu/), Massachusetts Institute of Technology. Downloaded on [DD Month W]
6.7205/3.435 - h tegr~ttedMicroeIectronic Devices - Spring 2007
Lecture 26-14
Depletion charge gives rise to capacitive effects:

LI
Source-body junction capacitance:
with
CIDrain-body junction capacitance:
with
In general, CjD< Cjs, because Ls
= Lo
and VDs > 0.
6.7205/3.435 - Integrated Microelectronic Devices - Spring 2007
Lecture 26-15
MOS depletion capacitance:
In linear and saturation regimes:
Cite as: leslis del Alarno, course materials for 6.7201 Integrated Microelectronic Devices, Spring 2007.
Spring 2007
Lecture 26-16
Key conclusions
MOSFET current in saturation regime:
Value of VDs that saturates transistor:
VDSsat
VGS - VT
Three types of depletion charge in a MOSFET:

source-body pn junction
- drain-body pn junction
- MOS structure
-
In saturation, capacitance associated with depletion

layer under MOS structure:

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6.7205/3.

435 - Integrated Microelectronic Devices

Lecture 26 - The "Long"

6.7205/3.435 - Integrated Microelectronic Devices

Why does the drain current in a MOSFET saturate

6.7205/3.435 - Integrated Microelectronic Devices

1. I-V characteristics of ideal MOSFET (cont.)

Problems with MOSFET current model for linear regime

Gradual-channel approximation becomes invalid.

6.7205/3.435 - Integrated Microelectronic Devices

Integrated Microelectronic Devices

What happens if VDs reaches or exceeds VGS - VT?

Depletion region is no barrier to electron flow: field "pulls"

a) linear regime VDS<VDS,,~

c) saturation regime VDS>VDS,,~

As VDs exceeds VGS - VT,

Integrated Microelectronic Devices

Lateral electrostatics in saturation:

C ~ t eas: leslis del Alarno, course rnater~alsfor 6.7201 Integrated M~croelectron~c

6.7205/3.435 - Integrated Microelectronic Devices

Current model in saturation:

IDdoes not increase passed VDs

VGS - VT. Hence,

VDs at which transistor saturates is denoted as VDssat:

6.7205/3.435 - htegrated Microelectronic Devices - Spring 2007

Why square dependence?

6.7205/3.435 - h tegrated Microelectronic Devices - Spring 200 7

Energy band diagrams (VGS> VT):

Pinch-off point: region of "free fall" of electrons.

6 720J/3 4 3 J - Integrated Microelectronic Devices - Spring 2007

2. Charge-voltage characteristics of ideal

6 720J/3 43J- Integrated M~croelectronicDevlces - Spring 2007

Source-body junction depletion charge (assume strongly

6.7205/3.435 - Integrated IlIicroelectronic Devices - Spring 2007

6.7205/3.435 - Integmted Microelectronic Devices

MOS depletion charge:

In cut-off (VGs < VT):

Increases with VGS.

6.7205/3.435 - h tegr~ttedMicroeIectronic Devices - Spring 2007

Depletion charge gives rise to capacitive effects:

Source-body junction capacitance:

CIDrain-body junction capacitance:

In general, CjD< Cjs, because Ls

and VDs > 0.

6.7205/3.435 - Integrated Microelectronic Devices - Spring 2007

MOS depletion capacitance:

In linear and saturation regimes:

6.7205/3.435 - Integrated Microelectronic Devices

MOSFET current in saturation regime:

Value of VDs that saturates transistor:

Three types of depletion charge in a MOSFET:

In saturation, capacitance associated with depletion

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