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    Silicon NPN Epitaxial Planar Type Darlington: Power Transistors

    Uploaded by

    Ariel Navarrete
    This document provides information on the 2SD1640 silicon NPN epitaxial planar type Darlington transistor. It includes absolute maximum ratings, features, electrical characteristics, and typical performance curves. The 2SD1640 is intended for low-frequency output amplification and has a high forward current transfer ratio, large peak collector current, and high collector-emitter voltage when the base is open. The document also contains notes on precautions and limitations when using the technical information.

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    © All Rights Reserved
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    Silicon NPN Epitaxial Planar Type Darlington: Power Transistors

    Uploaded by

    Ariel Navarrete
    51 views4 pages
    This document provides information on the 2SD1640 silicon NPN epitaxial planar type Darlington transistor. It includes absolute maximum ratings, features, electrical characteristics, and typical performance curves. The 2SD1640 is intended for low-frequency output amplification and has a high forward current transfer ratio, large peak collector current, and high collector-emitter voltage when the base is open. The document also contains notes on precautions and limitations when using the technical information.

    Original Description:

    transistor data

    Original Title

    2sd1640-g

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    This document provides information on the 2SD1640 silicon NPN epitaxial planar type Darlington transistor. It includes absolute maximum ratings, features, electrical characteristics, and typical performance curves. The 2SD1640 is intended for low-frequency output amplification and has a high forward current transfer ratio, large peak collector current, and high collector-emitter voltage when the base is open. The document also contains notes on precautions and limitations when using the technical information.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    51 views4 pages

    Silicon NPN Epitaxial Planar Type Darlington: Power Transistors

    Uploaded by

    Ariel Navarrete
    This document provides information on the 2SD1640 silicon NPN epitaxial planar type Darlington transistor. It includes absolute maximum ratings, features, electrical characteristics, and typical performance curves. The 2SD1640 is intended for low-frequency output amplification and has a high forward current transfer ratio, large peak collector current, and high collector-emitter voltage when the base is open. The document also contains notes on precautions and limitations when using the technical information.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 4

    Power Transistors

    2SD1640
    Silicon NPN epitaxial planar type darlington
    Unit: mm
    8.0+0.5
    0.1

    For low-frequency output amplification

    3.20.2

    Absolute Maximum Ratings Ta = 25C


    Parameter

    Symbol

    Rating

    Unit

    Collector-base voltage (Emitter open)

    VCBO

    120

    Collector-emitter voltage (Base open)

    VCEO

    100

    Emitter-base voltage (Collector open)

    VEBO

    Collector current

    IC

    Peak collector current

    ICP

    Collector power dissipation

    PC

    1.2

    Junction temperature

    Tj

    150

    Storage temperature

    Tstg

    55 to +150

    0.750.1

    0.50.1

    4.60.2

    3.050.1

    3.80.3
    1.90.1

    High forward current transfer ratio hFE


    Large peak collector current ICP
    High collector-emitter voltage (Base open) VCEO

    16.01.0

    Features

    11.00.5

    3.160.1

    0.50.1

    1.760.1

    2.30.2

    1: Emitter
    2: Collector
    3: Base
    TO-126B-A1 Package

    Internal Connection
    C

    E
    200

    Electrical Characteristics Ta = 25C 3C


    Parameter

    Symbol

    Collector-base voltage (Emitter open)

    VCBO

    IC = 100 A, IE = 0

    120

    Collector-emitter voltage (Base open)

    VCEO

    IC = 1 mA, IB = 0

    100

    Emitter-base voltage (Collector open)

    VEBO

    IE = 100 A, IC = 0

    Collector-base cutoff current (Emitter open)

    ICBO

    VCB = 25 V, IE = 0

    0.1

    Emitter-base cutoff current (Collector open)

    IEBO

    VEB = 4 V, IC = 0

    hFE

    VCE = 10 V, IC = 1 A

    Forward current transfer ratio

    *1, 2

    Collector-emitter saturation voltage *1


    Base-emitter saturation voltage

    *1

    Conditions

    Min

    Typ

    Max

    Unit
    V

    40 000

    VCE(sat)

    IC = 1.0 A, IB = 1.0 mA

    1.5

    VBE(sat)

    IC = 1.0 A, IB = 1.0 mA

    2.0

    4 000

    Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
    2. *1: Pulse measurement
    *2: Rank classification
    Rank
    hFE

    Publication date: May 2003

    4 000 to 10 000 8 000 to 20 000 16 000 to 40 000

    SJD00209BED

    2SD1640
    PC Ta

    IC VCE

    1.6

    2.5

    1.2

    Collector current IC (A)

    0.8

    0.4

    150A
    120A

    2.0

    90A

    1.5
    60A

    1.0

    0.5

    40

    80

    120

    160

    30A

    Ambient temperature Ta (C)

    Forward current transfer ratio hFE

    10

    TC=25C

    1
    100C
    25C

    104

    103

    25C

    102

    10
    0.01

    TC=100C
    25C

    0.1

    10

    Thermal resistance Rth (C/W)

    t=10ms
    t=100ms
    t=1s

    101

    102

    10

    60

    IE=0
    f=1MHz
    TC=25C

    50

    40

    30

    20

    10

    10

    100

    Collector-base voltage VCB (V)

    104

    Single pulse
    TC=25C

    IC

    103
    0.1

    0.1

    Rth t

    Safe operation area

    0.01
    0.01

    Collector current IC (A)

    Collector current IC (A)

    ICP

    0.1

    Cob VCB
    VCE=10V

    IC/IB=1000

    10

    25C

    Collector current IC (A)

    100

    0.1

    TC=100C

    hFE IC
    105

    0.1
    0.01

    25C

    Collector-emitter voltage VCE (V)

    VBE(sat) IC

    Collector current IC (A)

    10

    IC/IB=1000

    10

    Collector output capacitance


    C (pF)
    (Common base, input open circuited) ob

    Collector power dissipation PC (W)

    IB=180A

    100

    free air

    103

    102

    10

    101
    104

    103

    102

    101

    Time t (s)

    Collector-emitter voltage VCE (V)

    Collector-emitter saturation voltage VCE(sat) (V)

    TC=25C

    Without heat sink

    Base-emitter saturation voltage VBE(sat) (V)

    VCE(sat) IC

    3.0

    SJD00209BED

    10

    102

    103

    104

    Request for your special attention and precautions in using the technical information
    and semiconductors described in this material
    (1) An export permit needs to be obtained from the competent authorities of the Japanese Government
    if any of the products or technologies described in this material and controlled under the "Foreign
    Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
    (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license.
    (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
    product or technologies as described in this material.
    (4) The products described in this material are intended to be used for standard applications or general
    electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances).
    Consult our sales staff in advance for information on the following applications:
    Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
    combustion equipment, life support systems and safety devices) in which exceptional quality and
    reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
    harm the human body.
    Any applications other than the standard applications intended.
    (5) The products and product specifications described in this material are subject to change without
    notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
    the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
    the latest specifications satisfy your requirements.
    (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment.
    Even when the products are used within the guaranteed values, take into the consideration of
    incidence of break down and failure mode, possible to occur to semiconductor products. Measures
    on the systems such as redundant design, arresting the spread of fire or preventing glitch are
    recommended in order to prevent physical injury, fire, social damages, for example, by using the
    products.
    (7) When using products for which damp-proof packing is required, observe the conditions (including
    shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets
    are individually exchanged.
    (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
    permission of Matsushita Electric Industrial Co., Ltd.

    2002 JUL

    This datasheet has been download from:


    www.datasheetcatalog.com
    Datasheets for electronics components.

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