2SC1846

Power Transistors
1
Publication date: February 2003 SJD00094BED
2SC1846
Silicon NPN epitaxial planar type
For medium output power amplification
Complementary to 2SA0885
Features
Low collector-emitter saturation voltage V
CE(sat)
Output of 3 W can be obtained by a complementary pair with
2SA0885
TO-126B package which requires no insulation plate for installa-
tion to the heat sink
Absolute Maximum Ratings T
a
= 25C
Electrical Characteristics T
a
= 25C 3C
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
: Rank classification
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
CBO
I
C
= 1 mA, I
E
= 0 45 V
Collector-emitter voltage (Base open) V
CEO
I
C
= 2 mA, I
B
= 0 35 V
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= 20 V, I
E
= 0 0.1 A
Collector-emitter cutoff current (Base open) I
CEO
V
CE
= 20 V, I
B
= 0 100 A
Emitter-base cutoff current (Collector open) I
EBO
V
EB
= 5 V, I
C
= 0 10 A
Forward current transfer ratio h
FE1
*
V
CE
= 10 V, I
C
= 500 mA 85 340
h
FE2
V
CE
= 5 V, I
C
= 1 A 50
Collector-emitter saturation voltage V
CE(sat)
I
C
= 500 mA, I
B
= 50 mA 0.5 V
Transition frequency f
T
V
CB
= 10 V, I
E
= 50 mA, f = 200 MHz 200 MHz
Collector output capacitance C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz 20 pF
(Common base, input open circuited)
1: Emitter
2: Collector
3: Base
TO-126B-A1 Package
8.0
+0.5
0.1
1
.
9
0
.
1
3
.
0
5
0
.
1
3
.
8
0
.
3
1
1
.
0
0
.
5
1
6
.
0
1
.
0
3.20.2
0.750.1
0.50.1
2.30.2
4.60.2
0.50.1 1.760.1
1 2 3
3.160.1
Rank Q R S
h
FE1
85 to 170 120 to 240 170 to 340
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
45 V
Collector-emitter voltage (Base open) V
CEO
35 V
Emitter-base voltage (Collector open) V
EBO
5 V
Collector current I
C
1 A
Peak collector current I
CP
1.5 A
Collector power dissipation P
C
1.2 W
5.0
*
Junction temperature T
j
150 C
Storage temperature T
stg
55 to +150 C
Note)
*
: With a 100 100 2 mm Al heat sink
2SC1846
2
SJD00094BED
P
C
T
a
I
C
V
CE
I
C
I
B
V
CE(sat)
I
C
V
BE(sat)
I
C
h
FE
I
C
f
T
I
E
C
ob
V
CB
V
CER
R
BE
0
6
5
4
3
2
1
0 200 40 80 160 120
C
o
l
l
e
c
t
o
r

p
o
w
e
r

d
i
s
s
i
p
a
t
i
o
n

P
C

(
W
)
Ambient temperature T
a
(C)
(1)With a 1001002mm
Al heat sink
(2)Without heat sink
(1)
(2)
0
1.50
1.25
1.00
0.75
0.50
0.25
0 10 2 4 8 6
C
o
l
l
e
c
t
o
r

c
u
r
r
e
n
t

I
C

(
A
)
Collector-emitter voltage V
CE
(V)
TC=25C
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
1mA
IB=10mA
0
1.2
1.0
0.8
0.6
0.4
0.2
0 12 2 10 4 8 6
Base current I
B
(mA)
C
o
l
l
e
c
t
o
r

c
u
r
r
e
n
t

I
C

(
A
)
VCE=10V
Ta=25C
0.001
0.01
0.1
1
0.01 0.1 1
C
o
l
l
e
c
t
o
r
-
e
m
i
t
t
e
r

s
a
t
u
r
a
t
i
o
n

v
o
l
t
a
g
e

V
C
E
(
s
a
t
)

(
V
)
Collector current I
C
(A)
IC/IB=10
25C
25C
TC=100C
0.01
0.01 1 0.1
0.1
1
10
B
a
s
e
-
e
m
i
t
t
e
r

s
a
t
u
r
a
t
i
o
n

v
o
l
t
a
g
e

V
B
E
(
s
a
t
)

(
V
)
Collector current I
C
(A)
IC/IB=10
TC=25C
25C
100C
0.01 1 0.1
1
10
100
1000
F
o
r
w
a
r
d

c
u
r
r
e
n
t

t
r
a
n
s
f
e
r

r
a
t
i
o

h
F
E
Collector current I
C
(A)
VCE=10V
TC=100C
25C
25C
1 10 100
0
40
80
120
200
160
T
r
a
n
s
i
t
i
o
n

f
r
e
q
u
e
n
c
y

f
T

(
M
H
z
)
Emitter current I
E
(mA)
VCB=10V
f=200MHz
TC=25C
1 10 100
0
50
40
30
20
10
C
o
l
l
e
c
t
o
r

o
u
t
p
u
t

c
a
p
a
c
i
t
a
n
c
e

(
C
o
m
m
o
n

b
a
s
e
,

i
n
p
u
t

o
p
e
n

c
i
r
c
u
i
t
e
d
)

C
o
b

(
p
F
)
Collector-base voltage V
CB
(V)
IE=0
f=1MHz
TC=25C
0.1 1 10 100
0
20
40
60
80
100
Base-emitter resistance R
BE
(k)
C
o
l
l
e
c
t
o
r
-
e
m
i
t
t
e
r

v
o
l
t
a
g
e

(
R
e
s
i
s
t
o
r

b
e
t
w
e
e
n

B

a
n
d

E
)

V
C
E
R

(
V
)
IC=10mA
TC=25C
2SC1846
3
SJD00094BED
I
CEO
T
a
Safe operation area
1
10
10
2
10
3
10
4
0 160 40 120 80
I
C
B
O

(
T
a
)
I
C
B
O

(
T
a

=

2
5
C
)
Ambient temperature T
a
(C)
VCE=10V
0.001
0.1
0.01
0.1
1
10
1 10 100
C
o
l
l
e
c
t
o
r

c
u
r
r
e
n
t

I
C

(
A
)
Collector-emitter voltage V
CE
(V)
Single pulse
TC=25C
t=10ms
ICP
IC
t=1s
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteris-
tics and applied circuits examples of the products. It neither warrants non-infringement of intellec-
tual property right or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this material.
(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instru-
ments and household appliances).
Consult our sales staff in advance for information on the following applications:
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
wise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
recommended in order to prevent physical injury, fire, social damages, for example, by using the
products.
(7) When using products for which damp-proof packing is required, observe the conditions (including
shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets
are individually exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL
This datasheet has been download from:
www.datasheetcatalog.com
Datasheets for electronics components.

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Power Transistors

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