Syllabus (ELE 241)
Syllabus (ELE 241)
Syllabus (ELE 241)
2. Credits Hours:
303
7. Learning Outcomes:
Upon completion of the course, students will be able to:
1. Describe intrinsic and extrinsic semiconductor materials and calculate the electron and hole
concentrations at thermal equilibrium
2. Calculate the built in potential, depletion width and junction capacitance of a PN junction.
3. Explain the current-voltage relationship for a forward biased and for a reverse biased PN
junction.
4. Analyze Clipper, Clamping and multiple diode circuits.
5. Design, construct and test a DC power supply using rectifier and Zener diodes
6. Describe the basic Bipolar Junction Transistor (BJT) structure and the current voltage
characteristics for devices operating in forward active mode and in saturation mode.
7. Analyze and Design BJT biasing circuits for common emitter and common collector (emitter
follower) amplifier configurations.
8. Use BJT small signal modeling to analyze and design amplifiers with specific voltage gain, input
resistance and output resistance.
9. Describe the basic structure and the current voltage characteristics of the Metal Oxide
Semiconductor Transistor (MOSFET) and analyze MOSFETs operating in linear and saturation
regions.
10. Analyze and design biasing circuits including simple current mirror
11. Use MOSFET small signal modeling to analyze and design amplifiers with specific voltage gain,
input resistance and output resistance.
Weeks
2.5
2.5
3
2
1.5
1.5
1
2
16
Week 5
Week 9
Week 12
Week 6
Week 9
Week 15
Week 5
Week 15
Week 15
Week 3
Weight
22.5%
22.5%
25%
5%
Quizzes
Group Project
10%
5%
10%
Emphasis in
this course