Syllabus (ELE 241)

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American

University of Sharjah | College of Engineering


1. Course Number and Course Title:
ELE 241 Electronics I

2. Credits Hours:
303

3. Prerequisites and/or Co-Requisites:


Prerequisite: ELE 211 (Electric Circuits I)
Prerequisite/Concurrent: ELE241L (Electronics I Laboratory)

4. Name and Contact Information of Instructor:


Dr. Maher Bakri-Kassem
Office: EB2-219
Email: [email protected]
Phone: (06)515-2932
Office Hours: TRU 11:00 11:50am

5. Course Description (Catalog Description):


Reviews semiconductor physics. Covers PN junction; diode circuits; special diodes; bipolar junction
transistor (BJT); biasing, small signal analysis and design of BJT amplifiers; MOSFET transistor;
biasing, simple current mirror, small signal analysis and design of MOSFET amplifiers;
optoelectronic devices and digital electronics.

6. Textbook and other Supplemental Material:


Textbook:
Neamen, D., Microelectronics, 4th edition. McGraw-Hill, 2009
Other supplemental material:
A. Sedra and K. Smith, Microelectronic Circuits, 5th edition. Oxford Univ. Press, 2004

7. Learning Outcomes:
Upon completion of the course, students will be able to:
1. Describe intrinsic and extrinsic semiconductor materials and calculate the electron and hole
concentrations at thermal equilibrium
2. Calculate the built in potential, depletion width and junction capacitance of a PN junction.
3. Explain the current-voltage relationship for a forward biased and for a reverse biased PN
junction.
4. Analyze Clipper, Clamping and multiple diode circuits.
5. Design, construct and test a DC power supply using rectifier and Zener diodes
6. Describe the basic Bipolar Junction Transistor (BJT) structure and the current voltage
characteristics for devices operating in forward active mode and in saturation mode.
7. Analyze and Design BJT biasing circuits for common emitter and common collector (emitter
follower) amplifier configurations.
8. Use BJT small signal modeling to analyze and design amplifiers with specific voltage gain, input
resistance and output resistance.
9. Describe the basic structure and the current voltage characteristics of the Metal Oxide
Semiconductor Transistor (MOSFET) and analyze MOSFETs operating in linear and saturation
regions.
10. Analyze and design biasing circuits including simple current mirror
11. Use MOSFET small signal modeling to analyze and design amplifiers with specific voltage gain,
input resistance and output resistance.

American University of Sharjah | College of Engineering


12. Calculate thermal, shot, and flicker noise in resistance, BJT and MOSFET transistors.
13. Derive the voltage transfer function of a CMOS inverter and evaluate the power dissipation in the
inverter.

8. Teaching and Learning Methodologies:


Methods include lectures; problem and project based learning methods (homework, PSpice
simulations, and Project) and class discussions.

9. Course Topics and Schedule:


Topic

Semiconductor physics, PN junction


Diode circuits. Special diodes, and design of power supplies
Bipolar junction transistor (BJT) and DC Biasing

Small signal analysis, modeling and design of BJT amplifiers


MOSFET transistor. Biasing, simple current mirror
Small signal analysis, modeling and design of MOSFET amplifiers
Digital electronics
Review and Evaluation
Total:

Weeks
2.5
2.5
3
2
1.5
1.5
1
2
16

10. Schedule of Laboratory and other Non-Lecture Sessions:


See ELE241L syllabus

11. Out-of-Class Assignments with Due Dates:


Assignment
HW # 1 Semiconductor physics, PN junction

Due Date (tentative)


Week 3

HW # 2 Diode circuits. Special diodes


HW # 3 Bipolar junction transistor (BJT) and DC Biasing
HW # 4 Small signal analysis, modeling and design of
BJT amplifiers
HW # 5 MOSFET transistor. Biasing, simple current
mirror
HW # 6 Small signal analysis, modeling and design of MOSFET
amplifiers
PSpice #1 PN diode forward and reverse bias characteristics

Week 5
Week 9
Week 12

PSpice #2 I-V output characteristics of an NPN transistor


PSpice #3 I-V output characteristics of an NMOS transistor.

Week 6
Week 9

PSpice #4 CMOS inverter

Week 15

Group Project DC Power Supply

Week 5

Week 15
Week 15
Week 3

12. Student Evaluation:


Assessment
Midterm Exam 1
Midterm Exam 2
Final Exam

Weight
22.5%
22.5%
25%

Due Date (tentative)


March 13, 2013
April 17, 2013
To be decided by AUS
2

American University of Sharjah | College of Engineering


Homework

5%

Quizzes
Group Project

10%
5%

Computer simulation using PSpice

10%

All homework assignments


are due at most one week after
the assigned date
TBD
The group project is due at the
end of week 5 of the semester
Weeks 3, 6, 9 and 15

13. Contribution of Course to Program Outcomes


This course contributes to the accomplishment of the following program outcomes:
Program outcome
(a) an ability to apply knowledge of mathematics, science, and engineering
(b) an ability to design and conduct experiments, as well as to analyze and interpret
data
(c) an ability to design a system, component, or process to meet desired needs
within realistic constraints such as economic, environmental, social, political,
ethical, health and safety, manufacturability, and sustainability
(d) an ability to function on multidisciplinary teams
(e) an ability to identify, formulate, and solve engineering problems
(f) an understanding of professional and ethical responsibility
(g) an ability to communicate effectively
(h) the broad education necessary to understand the impact of engineering solutions
in a global, economic, environmental, and societal context
(i) a recognition of the need for, and an ability to engage in life-long learning
(j) a knowledge of contemporary issues
(k) an ability to use the techniques, skills, and modern engineering tools necessary
for engineering practice.

Emphasis in
this course

Emphasis: High; Medium; Low; Blank Nothing Specific Expected

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